IPB110N06L G OptiMOS® Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS(on),max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPB110N06L G Type IPP110N06L G Package Marking IPB110N06L G Package PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L IPP110N06L G Marking 110N06L P-TO220-3-1 110N06L 110N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 78 T C=100 °C 55 Pulsed drain current I D,pulse T C=25 °C1) 312 Avalanche energy, single pulse E AS I D=78 A, R GS=25 Ω 280 Reverse diode dv /dt dv /dt I D=78 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Unit A mJ kV/µs ±20 V 158 W -55 ... 175 °C 55/175/56 See figure 3 Rev. 1.0 page 1 2006-05-04 IPB110N06L G Parameter IPP110N06L G Values Symbol Conditions Unit min. typ. max. - - 0.95 minimal footprint - - 62 6 cm2 cooling area2) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=94 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=78 A - 8.5 11 mΩ V GS=4.5 V, I D=52 A - 10.9 15 V GS=10 V, I D=78 A, SMD version 8.2 11.0 V GS=4.5 V, I D=52 A, SMD version 10.6 14.7 - 1.9 - Ω 47 93 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=78 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2006-05-04 IPB110N06L G Parameter IPP110N06L G Values Symbol Conditions Unit min. typ. max. - 2000 2700 - 470 630 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 120 180 Turn-on delay time t d(on) - 8 13 Rise time tr - 19 29 Turn-off delay time t d(off) - 45 68 Fall time tf - 18 27 Gate to source charge Q gs - 8 11 Gate charge at threshold Q g(th) - 3 4 Gate to drain charge Q gd - 20 30 Switching charge Q sw - 25 36 Gate charge total Qg - 59 79 Gate plateau voltage V plateau - 4.0 - Output charge Q oss - 19 25 - - 78 - - 312 - 0.98 1.3 V - 54 67 ns - 61 76 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=78 A, R G=3 Ω pF ns Gate Charge Characteristics3) V DD=30 V, I D=78 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 3) T C=25 °C V GS=0 V, I F=78 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2006-05-04 IPB110N06L G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 180 90 160 80 140 70 120 60 100 50 I D [A] P tot [W] 1 Power dissipation 80 40 60 30 40 20 20 10 0 IPP110N06L G 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 limited by on-state resistance 1 µs 0.5 10 µs 102 100 µs 0.2 I D [A] Z thJC [K/W] 1 ms DC 10 ms 101 0.1 10-1 0.05 0.02 0.01 single pulse 0 10 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.0 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-05-04 IPB110N06L G IPP110N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 20 200 10 V 4V 3.5 V 5V 5.5 V 4.5 V 15 150 5V R DS(on) [mΩ] I D [A] 4.5 V 100 4V 5.5 V 10 10 V 5 50 3.5 V 3V 0 0 0 1 2 3 4 0 5 40 80 V DS [V] 120 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 120 100 80 80 I D [A] g fs [S] 60 60 40 40 175 °C 20 25 °C 20 0 0 0 1 2 3 4 5 V GS [V] Rev. 1.0 0 40 80 120 160 I D [A] page 5 2006-05-04 IPB110N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=78 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP110N06L G parameter: I D 35 3 30 2.5 25 20 15 V GS(th) [V] R DS(on) [mΩ] 2 98 % 940 µA 1.5 94 µA 1 10 typ 0.5 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 102 25 °C 175°C 98% 175 °C 103 I F [A] C [pF] Coss 25°C 98% 101 Crss 2 10 100 101 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.0 0 0.5 1 1.5 2 V SD [V] page 6 2006-05-04 IPB110N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=78 A pulsed parameter: T j(start) parameter: V DD 102 IPP110N06L G 12 25 °C 10 100 °C 12V 30 V 48 V 150 °C V GS [V] I AV [A] 8 101 6 4 2 100 0 100 101 102 103 0 20 t AV [µs] 40 60 80 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.0 page 7 2006-05-04 IPB110N06L G IPP110N06L G PG-TO-263 (D²-Pak) Rev. 1.0 page 8 2006-05-04 IPB110N06L G IPP110N06L G PG-TO220-3: Outline Rev. 1.0 page 9 2006-05-04 IPB110N06L G IPP110N06L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2006-05-04