IP IPT04Q08-TEB High current density due to double mesa technology Datasheet

IP Semiconductor Co., Ltd.
IPT04Q08-xxB
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT04Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
4
A
VDRM / VRRM
800
V
IGT
5 to 25
mA
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(Full sine wave)
Tc =105℃
IT(RMS)
4
A
ITSM
38
35
A
I²t
6
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT04Q08-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPT04Q08-xxB
Symbol
Test Condition
Quadrant
IGT
VD = 12V RL = 30Ω
VGT
VD=VDRM, RL=3.3KΩ,
VGD
Tj = 125 ℃
Unit
(dV/dt)c
AE
5
5
5
10
10
10
10
25
ALL
MAX
1.5
V
ALL
MIN
0.2
V
10
10
20
20
20
20
40
40
mA
MAX
II
dV/dt
SE
MAX
IG = 1.2 IGT
IH
DE
I – II – III
IV
I – III – IV
IL
TE
mA
IT = 500mA
MAX
15
15
25
25
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
10
10
10
10
V/us
(dV/dt) c=0.8A/ms Tj = 125 ℃
MIN
1
1
5
5
V/us
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 5.5A, t p = 380uS
Tj = 25 ℃
1.6
V
IDRM
VD = VDRM
Tj = 25 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
2.6
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT04Q08-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPT04Q08-xxB
IPT4Q08-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4
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