INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R399CP IIPW50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation @TC=25℃ 83 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.5 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R399CP IIPW50R399CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID=330μA 2.5 RDS(on) Drain-Source On-Resistance VGS=10V; ID=4.9A IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=4.9A, VGS = 0V isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP MAX UNIT V 3.5 V 0.399 Ω 0.1 μA 1 μA 1.2 V isc & iscsemi is registered trademark