IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS(on),max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO247-3-1 CS CoolMOS is specially designed for: • Hard switching SMPS topologies Type Package Ordering Code Marking IPW60R045CP PG-TO247-3-1 SP000067149 6R045 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 60 T C=100 °C 38 Pulsed drain current2) I D,pulse T C=25 °C 230 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 1950 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 3 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.0 Unit A mJ 11 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 431 W -55 ... 150 °C M3 and M3.5 screws page 1 60 Ncm 2006-06-19 IPW60R045CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 44 T C=25 °C A 230 15 V/ns Values Unit min. typ. max. - - 0.29 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V 2.5 3 3.5 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=3 mA Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 10 V DS=600 V, V GS=0 V, T j=150 °C - 50 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=44 A, T j=25 °C - 0.04 0.045 Ω V GS=10 V, I D=44 A, T j=150 °C - 0.11 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.0 RG page 2 Ω 2006-06-19 IPW60R045CP Parameter Values Symbol Conditions Unit min. typ. max. - 6800 - - 320 - - 310 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 820 - Turn-on delay time t d(on) - 30 - Rise time tr - 20 - Turn-off delay time t d(off) - 100 - Fall time tf - 10 - Gate to source charge Q gs - 34 - Gate to drain charge Q gd - 51 - Gate charge total Qg - 150 190 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 600 - ns - 17 - µC - 60 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=44 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=44 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD<=ID, di/dt<=100A/µs,VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 page 3 2006-06-19 IPW60R045CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 500 limited by on-state resistance 400 1 10µs µs 102 100 µs P tot [W] I D [A] 300 1 ms 200 101 DC 10 ms 100 100 0 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics Z(thJC)=f(tp) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 250 20 V 10 V 8 V 7V 200 0.5 10-1 0.2 Z thJC [K/W] 150 I D [A] 0.1 0.05 100 0.02 10 -2 6V 5.5 V 0.01 single pulse 5V 50 4.5 V 10-3 10-5 0 10-4 10-3 10-2 10-1 100 Rev. 2.0 0 5 10 15 20 V DS [V] t p [s] page 4 2006-06-19 IPW60R045CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 140 0.16 8V 7V 5.5 V 5V 10 V 120 6V 6V 20 V 6.5 V 7V 0.12 100 5.5 V I D [A] R DS(on) [Ω] 80 60 5V 40 4.5 V 20 V 0.08 0.04 20 0 0 0 5 10 15 20 0 20 40 V DS [V] 60 80 100 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=44 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.12 320 C °25 280 0.1 240 0.08 I D [A] R DS(on) [Ω] 200 0.06 98 % 160 C °150 120 typ 0.04 80 0.02 40 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.0 0 2 4 6 8 10 V GS [V] page 5 2006-06-19 IPW60R045CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=44 A pulsed I F=f(V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V GS [V] 150 °C, 98% 25 °C 150 °C 6 4 25 °C, 98% 101 2 100 0 0 50 100 0 150 0.5 1 Q gate [nC] 1.5 12 Drain-source breakdown voltage E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 2000 700 1500 660 V BR(DSS) [V] E AS [mJ] 11 Avalanche energy 1000 500 620 580 0 540 20 60 100 140 180 T j [°C] Rev. 2.0 2 V SD [V] -60 -20 20 60 100 140 180 T j [°C] page 6 2006-06-19 IPW60R045CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 50 105 104 40 Ciss 30 E oss [µJ] C [pF] 103 Coss 102 20 101 10 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.0 0 100 200 300 400 500 600 V DS [V] page 7 2006-06-19 IPW60R045CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-06-19 IPW60R045CP PG-TO-247-3-1: Outlines Dimensions in mm/inches: Rev. 2.0 page 9 2006-06-19 IPW60R045CP Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-06-19