PD- 94095A
IRF7329
HEXFET® Power MOSFET
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Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
VDSS
RDS(on) max (mW)
ID
17@VGS = -4.5V
21@VGS = -2.5V
±9.2A
-12V
30@VGS = -1.8V
±4.6A
±7.4A
Description
New P-Channel HEXFET Ò power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8
Top View
Absolute Maximum Ratings
Parameter
V DS
ID @ TA = 25°C
I D @ TA= 70°C
I DM
PD @TA = 25°C
P D @TA = 70°C
V GS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RqJL
RqJA
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Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
20
62.5
°C/W
1
01/29/04
IRF7329
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
DV(BR)DSS/DTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
-0.40
25
Typ.
0.007
38
6.8
8.1
10
8.6
340
260
3450
1000
640
Max. Units
Conditions
V
V GS = 0V, ID = -250µA
V/°C Reference to 25°C, I D = -1mA
17
V GS = -4.5V, ID = -9.2A
mW V GS = -2.5V, ID = -7.4A
21
30
V GS = -1.8V, ID = -4.6A
-0.90
V
V DS = V GS, ID = -250µA
S
V DS = -10V, ID = -9.2A
-1.0
V DS = -9.6V, VGS = 0V
µA
-25
V DS = -9.6V, VGS = 0V, T J = 70°C
-100
nA V GS = -8.0V
100
V GS = 8.0V
57
I D = -9.2A
10
nC V DS = -6.0V
12
V GS = -4.5V
V DD = -6.0V
ns
I D = -1.0A
R D = 6.0W
V GS = -4.5V
V GS = 0V
pF
V DS = -10V
= 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-37
50
48
-1.2
75
72
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T J = 25°C, IS = -2.0A, VGS = 0V
T J = 25°C, IF = -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board.
Pulse width £ 400µs; duty cycle £ 2%.
2
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IRF7329
100
100
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
10
1
-1.2V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
-1.2V
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
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,
6
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,
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Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
&
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
-VDS , Drain-to-Source Voltage (V)
$
V
P
G
T
T
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T
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Q
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V
P
K
C
T
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -9.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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-VGS , Gate-to-Source Voltage (V)
8
VDS =-9.6V
VDS =-6V
8
6
4
2
ID = -9.2A
0
0
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30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
0.4
0.6
0.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
10
1.0
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7329
10.0
VDS
VGS
-ID , Drain Current (A)
8.0
RD
D.U.T.
RG
-
+
6.0
VDD
VGS
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7329
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Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7329
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Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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Fig 16. Typical Power Vs. Time
7
IRF7329
SO-8 Package Details
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SO-8 Part Marking
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IRF7329
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/04
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9