IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G D G COMPLIANT • Lead (Pb)-free Available D S RoHS* • Simple Drive Requirements Single I2PAK (TO-262) Available • Repetitive Avalanche Rated 3.0 D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRFBE30SPbF IRFBE30STRLPbFa IRFBE30LPbF SiHFBE30S-E3 SiHFBE30STL-E3a SiHFBE30L-E3 IRFBE30S - - SiHFBE30S - - Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 4.1 2.6 A IDM 16 1.0 W/°C Single Pulse Avalanche Energyb EAS 260 mJ Avalanche Currenta IAR 4.1 A Repetitive Avalanche Energya EAR 13 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt 2.0 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = 50 V, starting TJ = 25 °C, L = 29 mH, RG = 25 Ω, IAS = 4.1 A (see fig. 12). ISD ≤ 4.1 A, dI/dt ≤ 100 A/µs, VDD ≤ 600 V, TJ ≤ 150 °C. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91119 S-81432-Rev. A, 07-Jul-08 www.vishay.com 1 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 62 Case-to-Sink, Flat, Greased Surface RthCS - 0.50 - Maximum Junction-to-Case (Drain) RthJC - - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 800 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.90 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 800 V, VGS = 0 V - - 100 VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 500 - - 3.0 Ω VDS = 100 V, ID = 2.5 A 2.5 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - - 310 - - 190 - - - 78 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 2.5 Ab VGS = 10 V µA Dynamic Input Capacitance Ciss Output Capacitance Coss pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 9.6 Gate-Drain Charge Qgd - - 45 Turn-On Delay Time td(on) - 12 - tr - 33 - - 82 - - 30 - - 4.5 - - 7.5 - - - 4.1 - - 16 - - 1.8 - 480 720 ns - 1.8 2.7 nC Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V ID = 4.1 A, VDS = 400 V, see fig. 6 and 13b VDD = 400 V, ID = 4.1 A, RG = 12 Ω, RD = 95 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91119 S-81432-Rev. A, 07-Jul-08 www.vishay.com 3 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - + RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91119. Document Number: 91119 S-81432-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1