IRF IRFD014PBF Hexfetâ® power mosfet Datasheet

PD- 95920
IRFD014PbF
• Lead-Free
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IRFD014PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
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IRFD014PbF
Hexdip Package Outline
Dimensions are shown in millimeters (inches)
Hexdip Part Marking Information
THIS IS AN IRFD120
INTERNAT IONAL
RECT IF IER
LOGO
PART NUMBER
IRFD120
XXXX
AS S EMBLY LOT CODE
DAT E CODE
(PYWWA)
P = LEAD-FREE (optional)
Y = YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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