IRFH5204PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 4.3 mΩ Qg (typical) 43 nC RG (typical) 1.7 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFH5204TRPbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 IRFH5204TR2PbF PQFN 5mm x 6mm Tape and Reel Note 400 EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 40 ± 20 22 18 100 100 400 3.6 105 Units 0.029 -55 to + 150 W/°C h h V A W °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015 IRFH5204PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Output Charge Min. 40 ––– ––– 2.0 ––– ––– ––– ––– ––– 96 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.05 3.6 ––– -9.3 ––– ––– ––– ––– ––– 43 9.1 4.0 14 16 18 18 Max. Units Conditions ––– V VGS = 0V, ID = 250uA ––– V/°C Reference to 25°C, ID = 1.0mA 4.3 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 100μA ––– mV/°C 20 VDS = 40V, VGS = 0V μA 250 VDS = 40V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A 65 ––– VDS = 20V VGS = 10V ––– nC ID = 50A ––– ––– ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.7 8.4 14 18 8.3 2460 515 250 ––– ––– ––– ––– ––– ––– ––– ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e Ω ns pF VDD = 20V, VGS = 10V ID = 50A RG=1.8Ω VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 102 50 Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM c VSD trr Qrr ton Min. Typ. Max. Units ––– ––– 100 ––– ––– h 400 A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 500A/μs ––– ––– 1.3 V ––– 30 45 ns ––– 128 192 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g www.irf.com © 2015 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. 1.2 15 35 22 Units °C/W March 12, 2015 IRFH5204PbF 1000 1000 VGS 15V 10V 7.00V 6.00V 5.50V 5.00V 4.75V 4.50V ID, Drain-to-Source Current (A) 100 10 BOTTOM 1 4.5V 0.1 100 BOTTOM 10 4.5V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.01 0.1 1 Tj = 150°C 1 10 0.1 100 1000 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 14 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 1000 Coss Crss 100 12 VDS= 32V VDS= 20V VDS= 8V 10 8 6 4 2 0 10 1 10 0 100 Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage www.irf.com © 2015 International Rectifier 10 20 30 40 50 60 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 3 VGS 15V 10V 7.00V 6.00V 5.50V 5.00V 4.75V 4.50V TOP ID, Drain-to-Source Current (A) TOP Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback March 12, 2015 IRFH5204PbF 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C 100 T J = 25°C 10 1 100 100μsec 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.10 1.6 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 5.0 125 VGS(th) , Gate threshold Voltage (V) Limited By Package 100 ID, Drain Current (A) 1 75 50 25 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 ID = 1.0A ID = 1.0mA ID = 500μA ID = 150μA ID = 100μA 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015 12 450 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5204PbF ID = 50A 10 8 T J = 125°C 6 4 T J = 25°C 2 0 ID TOP 6.9A 16A BOTTOM 50A 400 350 300 250 200 150 100 50 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2015 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback March 12, 2015 IRFH5204PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback March 12, 2015 IRFH5204PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015 IRFH5204PbF PQFN 5x6 Outline "B" Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS DES CRIPTION CODE Ao Dimension design to accommodate the component width Bo Dimension design to accommodate the component lenght Ko Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s ucces sive cavity centers W P1 QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015 IRFH5204PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.081mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Revision History Date 12/16/2013 3/12/2015 Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet with new IR corporate template • Updated package outline and tape and reel on pages 7 and 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015