Fairchild IRFI840B 500v n-channel mosfet Datasheet

IRFW840B / IRFI840B
500V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
•
•
•
•
•
•
8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
●
◀
G
S
D2-PAK
G D S
IRFW Series
G!
I2-PAK
▲
●
●
IRFI Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IRFW840B / IRFI840B
500
Units
V
8.0
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
5.1
A
32
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
320
mJ
IAR
Avalanche Current
(Note 1)
8.0
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
13.4
5.5
3.13
mJ
V/ns
W
134
1.08
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, Tstg
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
0.93
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
November 2001
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
--
0.55
--
V/°C
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.65
0.8
Ω
--
7.3
--
S
--
1400
1800
pF
--
145
190
pF
--
35
45
pF
--
22
55
ns
--
65
140
ns
--
125
260
ns
--
75
160
ns
--
41
53
nC
--
6.5
--
nC
--
17
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 4.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 8.0 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 8.0 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.0
A
ISM
--
--
32
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 8.0 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
390
--
ns
Qrr
Reverse Recovery Charge
--
4.2
--
µC
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
Electrical Characteristics
IRFW840B / IRFI840B
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
0
10
o
25 C
o
-55 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
1
10
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.5
2.0
VGS = 20V
1.5
1.0
0
10
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0.5
0
5
10
15
20
25
30
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
12
VDS = 100V
10
Capacitance [pF]
2000
Ciss
1500
Coss
1000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VGS, Gate-Source Voltage [V]
VDS = 250V
8
VDS = 400V
6
4
2
※ Note : ID = 8.0 A
0
0
-1
10
0
10
1
10
0
5
10
15
20
25
30
35
40
45
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.0 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
Operation in This Area
is Limited by R DS(on)
2
10
8
ID, Drain Current [A]
10
10 µs
ID, Drain Current [A]
100 µs
1
1 ms
10 ms
DC
0
10
※ Notes :
-1
10
0
25
-2
0
1
10
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
6
2
10
3
10
10
50
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C (t) = 0 .9 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
10
0 .1
-1
0 .0 5
PDM
0 .0 2
θ JC
(t), T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Z
0 .0 1
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2001 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. B, November 2001
IRFW840B / IRFI840B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
Package Dimensions
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2-PAK
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW840B / IRFI840B
Package Dimensions
(Continued)
I2-PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4