IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Single COMPLIANT • Lead (Pb)-free Available D DPAK (TO-252) RoHS* • Fully Characterized Capacitance and Avalanche Voltage and Current 8.1 Configuration Available APPLICATIONS IPAK (TO-251) • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • Power Factor Correction S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET • Low Power Single Transistor Flyback ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) IRFR1N60APbF IRFR1N60ATRLPbFa IRFR1N60ATRPbFa IRFR1N60ATRRPbFa IRFU1N60APbF SiHFR1N60A-E3 SiHFR1N60ATL-E3a SiHFR1N60AT-E3a SiHFR1N60ATR-E3a SiHFU1N60A-E3 IRFR1N60A - IRFR1N60ATRa - IRFU1N60A SiHFR1N60A - SiHFR1N60ATa - SiHFU1N60A Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor Energyb UNIT V 1.4 0.89 A 5.6 0.28 W/°C EAS 93 mJ Repetitive Avalanche Currenta IAR 1.4 A Energya EAR 3.6 mJ Single Pulse Avalanche Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 36 W dV/dt 3.8 V/ns TJ, Tstg - 55 to + 150 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 95 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12). c. ISD ≤ 1.4 A, dI/dt ≤ 180 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91267 S-81367-Rev. A, 21-Jul-08 www.vishay.com 1 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 50 Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = 250 µA 600 - - VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 0.84 Ab VGS = 10 V VDS = 50 V, ID = 0.84 A V nA µA - - 7.0 Ω 0.88 - - S - 229 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs - 32.6 - - 2.4 - VDS = 1.0 V, f = 1.0 MHz - 320 - VDS = 480 V, f = 1.0 MHz - 11.5 - - 130 - VDS = 0 V to 480 VGS = 10 V Vc ID = 1.4 A, VDS = 400 V, see fig. 6 and 13b - - 14 - - 2.7 pF nC Gate-Drain Charge Qgd - - 8.1 Turn-On Delay Time td(on) - 9.8 - - 14 - - 18 - - 20 - - - 1.4 - - 5.6 - - 1.6 - 290 440 ns - 510 760 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 1.4 A, RG = 2.15 Ω, RD = 178 Ω, see fig. 10b tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91267 S-81367-Rev. A, 21-Jul-08 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 TJ = 150 ° C 1 TJ = 25 ° C 0.1 4.0 Fig. 1 - Typical Output Characteristics I D , Drain-to-Source Current (A) 1 4.5V 20μs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91267 S-81367-Rev. A, 21-Jul-08 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 5.0 VGS , Gate-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 V DS = 100V 20μs PULSE WIDTH ID = 1.4A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix 10 V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 10000 1000 C iss 100 C oss 10 TJ = 150 ° C 1 TJ = 25 ° C Crss 1 0.1 0.4 A 1 10 100 1000 1.0 1.2 100 ID = 1.4A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 16 0.6 VSD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) 20 V GS = 0 V 12 8 10 10us 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 2 4 6 8 10 12 14 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91267 S-81367-Rev. A, 21-Jul-08 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix RD VDS 1.6 VGS D.U.T. ID , Drain Current (A) RG + - VDD 1.2 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 0.8 Fig. 10a - Switching Time Test Circuit VDS 0.4 90 % 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91267 S-81367-Rev. A, 21-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A 200 ID 0.65A 0.9A BOTTOM 1.4A 770 TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DSav , Avalanche Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 750 730 710 690 670 0.0 A 0.4 0.8 1.2 1.6 I av , Avalanche Current (A) Fig. 12d - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91267 S-81367-Rev. A, 21-Jul-08 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91267. Document Number: 91267 S-81367-Rev. A, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1