Kersemi IRFU9020PBF Power mosfet Datasheet

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 50
RDS(on) (Ω)
VGS = - 10 V
0.28
Qg (Max.) (nC)
14
Qgs (nC)
6.5
Qgd (nC)
6.5
Configuration
Single
S
•
•
•
•
•
•
•
Surface Mountable (Order As IRFR9020/SiHFR9020)
Straight Lead Option (Order As IRFU9020/SiHFU9020)
Repetitive Avalanche Ratings
Dynamic dV/dt Rating
Simple Drive Requirements
Ease of Paralleling
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020/SiHFR9020 is provided on 16mm tape. The
straight lead option IRFR9020/SiHFR9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9020PbF
SiHFR9020-E3
IRFR9020
SiHFR9020
DPAK (TO-252)
IRFR9020TRPbFa
SiHFR9020T-E3a
IRFR9020TRa
SiHFR9020Ta
DPAK (TO-252)
IRFR9020TRLPbFa
SiHFR9020TL-E3a
IRFR9020TRLa
SiHFR9020TLa
IPAK (TO-251)
IRFU9020PbF
SiHFU9020-E3
IRFU9020
SiHFU9020
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
SYMBOL
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
ID
IDM
EAS
IAR
EAR
LIMIT
- 50
± 20
- 9.9
- 6.3
- 40
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A
c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
42
5.8
- 55 to + 150
300d
UNIT
W
V/ns
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
Case-to-Sink
RthCS
-
-
110
-
1.7
-
Maximum Junction-to-Case (Drain)
RthJC
-
-
3.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 µA
- 50
-
-
V
Static
Drain-Source Breakdown Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
Gate-Source Threshold Voltage
IGSS
VGS = ± 20 V
-
-
± 500
nA
Zero Gate Voltage Drain Current
IDSS
VDS = max. rating, VGS = 0 V
-
-
250
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
-
-
1000
-
0.20
0.28
Ω
VDS ≤ - 50 V, IDS = - 5.7 A
2.3
3.5
-
S
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
-
490
-
-
320
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VGS = - 10 V
ID = 5.7 Ab
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = - 10 V
ID = - 9.7 A, VDS = 0.8 x max.
rating, see fig. 16
(Independent operating
temperature)
VDD = - 25 V, ID = - 9.7 A,
RG = 18 Ω, RD = 2.4 Ω, see fig. 15
(Independent operating temperature)
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact.
70
-
-
9.4
14
-
4.3
6.5
-
4.3
6.5
-
8.2
12
-
57
66
-
12
18
-
25
38
-
4.5
-
-
7.5
-
nC
ns
D
nH
G
S
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2
-
pF
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
- 9.9
S
-
-
- 40
TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb
-
-
- 6.3
UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb
V
56
110
280
ns
0.17
0.34
0.85
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 6 - Typical Source-Drain Diode Forward Voltage
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Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Fig. 13b - Unclamped Inductive Test Circuit
IAS
VDS
IL
VDD
tp
VDS
Fig. 13c - Unclamped Inductive Waveforms
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
td(on)
tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 15a - Switching Time Waveforms
Fig. 15b - Switching Time Test Circuit
QG
- 10 V
QGS
QGD
VG
Charge
Fig. 16a - Basic Gate Charge Waveform
Fig. 16b - Gate Charge Test Circuit
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 17 - For P-Channel
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ISD
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