IRF IRFV260 Simple drive requirement Datasheet

Provisional Data Sheet No. PD-9.2002
IRFV260
HEXFET® TRANSISTOR
N-CHANNEL
Product Summary
Ω, HEXFET
200 Volt, 0.060Ω
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver y
low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
Part Number
IRFV260
BVDSS
200V
RDS(on)
0.060Ω
ID
45A*
Features:
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
I D @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
T STG
IRFV260
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
45*
29
180
300
2.4
±20
700
45
30
4.3
-55 to 150
* ID current limited by pin diameter
A
W
W/K
V
mJ
A
mJ
V/ns
oC
Storage Temperature Range
Lead Temperature
Weight
Units
300 (0.063 in. (1.6mm) from case for 10 sec.)
10.9 (typical)
g
IRFV260 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV DSS
Drain-to-Source Breakdown Voltage
Min.
200
Typ. Max. Units
—
—
Test Conditions
V
∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage
R DS(on)
Static Drain-to-Source
On-State Resistance
V GS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
I DSS
Zero Gate Voltage Drain Current
—
—
—
2.0
22
—
—
I GSS
I GSS
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
—
—
—
—
—
—
—
—
VGS = 0V, ID = 1.0 mA
0.24
—
V/°C Reference to 25°C, ID = 1.0 mA
— 0.060
VGS = 10V, ID =29A „
Ω
— 0.068
VGS = 10V, ID = 45A
—
4.0
V
VDS = VGS, I D = 250µA
—
—
S( )
VDS ≥ 15V, IDS = 29A „
—
25
VDS =0.8 x Max Rating,VGS=0V
µA
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
100
VGS = 20V
nA
—
-100
VGS = -20V
—
230
VGS =10V, I D = 45A
—
40
nC
VDS = Max. Rating x 0.5
—
110
—
29
VDD = 100V, ID =45A,
—
120
ns
RG = 2.35Ω, VGS =10V
—
110
tf
LD
Fall Time
Internal Drain Inductance
—
—
—
8.7
92
—
LS
Internal Source Inductance
—
8.7
—
nH
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5100
1100
280
—
—
—
pF
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
IRFV260 Device
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
Min. Typ. Max. Units
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
VSD Diode Forward Voltage
t rr
Reverse Recovery Time
Q RR Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
45*
180
A
—
—
—
—
—
—
1.8
420
4.9
V
ns
µC
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = 45A, VGS = 0V „
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ @ VDD = 50V, Star ting T J = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 45A, VGS = 10V, 25 ≤ R G ≤ 200Ω
Min. Typ. Max. Units Test Conditions
—
—
—
— 0.42
—
30
0.21 —
K/W
typical socket mount
mounting surface flat, smooth
ƒ ISD ≤ 45A, di/dt ≤ 130 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
IRFV260 Device
Case Outline and Dimensions — TO-258AA
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
2. All dimensions in millimeters (inches)
LEGEND:
1. Drain
2.. Source
3. Gate
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which will
produce beryllia or beryllium dust. Furthermore, beryllium oxides
packages shall not be placed in acids that will produce fumes
containing beryllium.
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http://www.irf.com/
Data and specifications subject to change without notice.
7/96
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