Vishay IRFZ34STRR Power mosfet Datasheet

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
60
RDS(on) (Ω)
VGS = 10 V
0.050
Qg (Max.) (nC)
46
Qgs (nC)
11
Qgd (nC)
22
Configuration
Single
G
COMPLIANT
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ34L/SiHFZ34L) is available
for low-profile applications.
G
D
Available
RoHS*
DESCRIPTION
D
D2PAK (TO-263)
I2PAK (TO-262)
Advanced Process Technology
Surface Mount
Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)
175 °C Operating Temperature
Fast Switching
Lead (Pb)-free Available
S
S
N-Channel MOSFET
ORDERING INFORMATION
D2PAK (TO-263)
IRFZ34SPbF
SiHFZ34S-E3
IRFZ34S
SiHFZ34S
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
IRFZ34STRRPbFa
SiHFZ34STRPbFa
IRFZ34STRRa
SiHFZ34STRa
D2PAK (TO-263)
IRFZ34STRLPbFa
SiHFZ34STLPbFa
IRFZ34STRLa
SiHFZ34STLa
I2PAK (TO-263)
IRFZ34LPbF
SiHFZ34L-E3
IRFZ34L
SiHFZ34L
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
VDS
VGS
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300d
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta, e
IDM
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
ID
EAS
TC = 25 °C
TA = 25 °C
dV/dtc, e
PD
dV/dt
Peak Diode Recovery
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
UNIT
V
A
W/°C
mJ
W
V/ns
°C
www.vishay.com
1
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
(PCB Mount)a
PARAMETER
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C / W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = 250 µA
MIN.
TYP.
MAX.
UNIT
60
-
-
V
-
0.065
-
V/°C
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
ΔVDS/TJ
VGS(th)
Reference to 25 °C, ID = 1
VDS = VGS, ID = 250 µA
IGSS
IDSS
RDS(on)
gfs
mAc
VGS = ± 20 V
-
-
± 100
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
-
-
0.05
Ω
9.3
-
-
S
-
1200
-
-
600
-
-
100
-
ID = 18 Ab
VGS = 10 V
VDS = 25 V, ID = 18
Ab
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 30 A, VDS = 48 V,
see fig. 6 and 13b, c
-
-
46
-
-
11
Gate-Drain Charge
Qgd
-
-
22
Turn-On Delay Time
td(on)
-
13
-
-
100
-
-
29
-
-
52
-
-
7.5
-
-
-
30
-
-
120
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Source Inductance
LS
VDD = 30 V, ID = 30 A,
RG = 12 Ω, RD = 1.0 Ω, see fig. 10b, c
Between lead, and center of die contact
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/µsb, c
-
-
1.6
V
-
120
230
ns
-
700
1400
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IrFZ34/SiHFZ34 data and test conditions.
www.vishay.com
2
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
I AS
V DD
VDS
10 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?90368.
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
Similar pages