IRF IRHF597110 Simple drive requirement Datasheet

PD - 94176C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF597110
100V, P-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHF597110 100K Rads (Si)
IRHF593110
300K Rads (Si)
RDS(on)
1.0Ω
ID
-2.6A
1.0Ω
-2.6A
TO-39
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-2.6
-1.6
-10.4
15
0.12
±20
30
-2.6
1.5
6.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/03/03
IRHF597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
VGS = 0V, ID = -1.0mA
—
-0.13
—
V/°C
Reference to 25°C, ID = -1.0mA
—
—
-2.0
1.3
—
—
—
—
—
—
—
—
1.2
1.0
-4.0
—
-10
-25
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
11
3.0
4.0
20
20
30
95
—
nC
VGS = -12V, ID = -2.6A ➃
VGS = -12V, ID = -1.6A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -1.6A ➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -2.6A
VDS = -50V
ns
VDD = -50V, ID = -2.6A
VGS =-12V, RG = 7.5Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
V
S( )
Ω
BVDSS
µA
nA
Test Conditions
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
370
100
7.0
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-2.6
-10.4
-5.0
100
250
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -2.6A, VGS = 0V ➃
Tj = 25°C, IF = -2.6A, di/dt ≤−100A/µs
VDD ≤ -25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
8.3
175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHF597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
100K Rads(Si)1
Min Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-39)
Diode Forward Voltage ➃
300K Rads (Si)2 Units
Min Max
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.916
—
-5.0
Test Conditions
-100
—
-2.0
-5.0
—
-100
—
100
—
-10
—
0.916
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -80V, VGS =0V
VGS = -12V, ID =-1.6A
—
V
VGS = 0V, IS = -2.6A
V
-5.0
1. Part number IRHF597110
2. Part number IRHF593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
I
LET
MeV/(mg/cm2)
28.0
36.8
59.8
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=5V
43.0
-100
-100
39.0
-100
-100
32.6
-60
—
VDS (V)
@ VGS=10V @VGS=15V
-100
-70
-70
- 50
—
—
@VGS=20V
-60
-40
—
-120
-100
VDS
-80
Cu
Br
I
-60
-40
-20
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHF597110
Pre-Irradiation
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
-5.0V
1
20µs PULSE WIDTH
T = 25 C
1
1
10
100
2.5
10
TJ = 150 ° C
15
V DS = -50V
20µs PULSE WIDTH
8
9
10
11
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
7
1
10
100
Fig 2. Typical Output Characteristics
100
6
°
J
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
20µs PULSE WIDTH
T = 150 C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
1
-5.0V
°
J
0.1
0.1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -2.6A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
500
Ciss
400
300
C
oss
200
100
Crss
20
-VGS , Gate-to-Source Voltage (V)
600
C, Capacitance (pF)
IRHF597110
0
1
10
ID = -2.6A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
2
-VDS , Drain-to-Source Voltage (V)
4
6
8
10
12
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
-I D, Drain-to-Source Current (A)
100
-ISD , Reverse Drain Current (A)
VDS = -80V
VDS = -50V
VDS = -20V
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5.0
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
0.1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF597110
Pre-Irradiation
3.0
RD
VDS
VGS
2.5
D.U.T.
-ID , Drain Current (A)
RG
-
V DD
+
2.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
Fig 10a. Switching Time Test Circuit
1.0
0.5
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
1
0.10
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHF597110
L
VDS
tp
VD D
A
IA S
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
-2
V
V0GS
60
ID
-1.2A
-1.6A
BOTTOM -2.6A
TOP
50
40
30
20
10
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
-12V
12V
.2µF
.3µF
-12V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF597110
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD =-25V, starting TJ = 25°C, L= 8.9 mH
Peak IL = -2.6A, VGS = -12V
➂ ISD ≤ -2.6A, di/dt ≤ -120A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/03
8
www.irf.com
Similar pages