PD-94431A IRHG597110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) 100V, Quad P-CHANNEL ® ™ RAD-Hard HEXFET 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96Ω -0.96A IRHG593110 300K Rads (Si) 0.98Ω -0.96A MO-036AB International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings (Per Die) Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units -0.96 -0.6 -3.84 1.4 0.011 ± 20 200 -0.96 0.14 7.1 -55 to 150 A W W/°C V mJ A mJ V/ns °C 300 (0.63 in./1.6mm from case for 10s) 1.3 (Typical) g For footnotes refer to the last page www.irf.com 1 07/07/15 IRHG597110 Pre-Irradiation Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage -100 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 1.1 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — Typ Max Units — — V -0.14 — V/°C — 0.96 — — — — -4.0 — -10 -25 — — — — — — — — — 10 -100 100 13.4 3.7 3.0 21 17 40 90 — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -0.6A Ω V S nC VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -0.6A VDS = -80V, VGS = 0V VDS = -80V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS = -12V, ID = -0.96A, VDS = -50V ns VDD = -50V, ID = -0.96A, VGS = -12V, RG = 7.5Ω µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 390 100 7.0 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.96 -3.84 -5.0 86 240 Test Conditions A V nS nC Tj = 25°C, IS = -0.96A, VGS = 0V Tj = 25°C, IF = -0.96A, di/dt ≤ -100A/µs VDD ≤ -25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 90 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHG597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (MO-036AB) Diode Forward Voltage 300K Rads (Si)2 Min Max (Per Die) Test Conditions Units -100 - 2.0 — — — — — -4.0 -100 100 -10 0.916 -100 - 2.0 — — — — — -4.0 -100 100 -10 0.936 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID = -0.6A — 0.96 — 0.98 Ω VGS = -12V, ID = -0.6A — -3.5 — -3.5 V VGS = 0V, IS = -0.96A V nA 1. Part number IRHG597110 2. Part number IRHG593110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) LET 2 (MeV/(mg/cm )) Energy Range (MeV) (µm) VDS (V) @VGS = @VGS = @VGS = @VGS = 0V 5V 10V 15V @VGS = 20V 270 ± 7.5% 35 ± 7.5% -100 -100 -100 -100 -100 61 ± 5% 330 ± 7.5% 30 ± 7.5% -100 -100 -100 -100 -25 84 ± 5% 350 ± 7.5% 28 ± 7.5% -100 -100 -100 -30 - Bias VDS (V) 38 ± 5% -120 -100 -80 -60 -40 -20 0 LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% 0 5 10 15 20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHG597110 10 Pre-Irradiation 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 -5.0V 1 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C TJ = 150 ° C 1 5.0 V DS = -50V 20µs PULSE WIDTH 5.2 5.4 5.6 5.8 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -0.96A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 500 Ciss 400 300 200 Coss 100 20 -VGS , Gate-to-Source Voltage (V) 600 IRHG597110 1 12 8 4 0 10 VDS =-80V VDS =-50V VDS =-20V 16 Crss 0 ID = -0.96A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 4 6 8 10 12 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 -I D, Drain-to-Source Current (A) 10 -ISD , Reverse Drain Current (A) 2 TJ = 150 ° C 1 TJ = 25 ° C V GS = 0 V 0.1 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHG597110 Pre-Irradiation 1.0 VGS 0.8 -ID , Drain Current (A) RD V DS D.U.T. RG + 0.6 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.4 Fig 10a. Switching Time Test Circuit 0.2 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRHG597110 L VDS D.U.T. RG VGS -20V IAS tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) Pre-Irradiation 500 ID -0.4A -0.6A BOTTOM -0.96A TOP 400 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12V QGS .2µF .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 50KΩ -12V 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHG597110 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25°C, L= 430mH, Peak IL = -0.96A, VGS =-12V ISD ≤ -0.96A, di/dt ≤ -290A/µs, VDD ≤ -100V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2015 8 www.irf.com