Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1438 IRHM9064 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -60 Volt, 0.060Ω Product Summary International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Part Number IRHM9064 BV DSS -60V n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Pre-Radiation Parameter VGS EAS I AR EAR dv/dt TJ TSTG ID -35*A Features: Absolute Maximum Ratings ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.060Ω IRHM9064 Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight To Order -35* -26 -168 250 2.0 ± 20 500 -35* 25 -5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s 9.3 (typical) Units A W W/K V mJ A mJ V/ns o C g Previous Datasheet Index Next Data Sheet IRHM9064 Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -60 — — V — -0.048 — V/°C — — -2.0 16 — — — — — — — — 0.060 0.070 -4.0 — -25 -250 — — — — — — — — — — — — — — — — — — — 8.7 -100 100 260 60 86 62 227 200 115 — — 8.7 — — — — 7400 3200 540 — — — ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ Max Units Ω V S( ) Ω BVDSS µA nA nC ns nH pF Test Conditions VGS =0 V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -26A VGS = -12V, ID = -35A VDS = VGS, ID = -1.0mA VDS > -15V, I DS = -26 A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS =-20 V VGS = 20V VGS =-12V, ID = -35A VDS = Max Rating x 0.5 VDD = -30V, ID = -35A, RG = 2.35Ω Measured from drain lead, Modified MOSFET symbol show6mm (0.25 in) from package ing the internal inductances. to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. VGS = 0V, VDS = -25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — -35 -168 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.0 480 3.7 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = -35A, VGS = 0V Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs VDD ≤ -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Junction-to-Sink Min Typ Max — — — — 0.50 — 48 0.21 — To Order Units Test Conditions K/W Typical socket mount Previous Datasheet Index Next Data Sheet IRHM9064 Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test Table 1. Low Dose Rate circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments and the results are shown in Table 3. IRHM9064 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD 100K Rads (Si) Units Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate Test Conditions Min Max -200 -2.0 — — — — — -4.0 -100 100 -25 0.060 nA µA Ω VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -26A — -3.0 V TC = 25°C, IS = -35A,VGS = 0V V 1011 Rads (Si)/sec 1012 Rads (Si)/sec VDSS Parameter Min Typ Max Min Typ Max Drain-to-Source Voltage — -48 — — — -100 — -160 0.8 — IPP di/dt L1 — — -100 — -800 0.1 — Table 3. Single Event Effects — — -48 — — Units Test Conditions V Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/µsec Rate of rise of photo-current µH Circuit inductance required to limit di/dt Parameter Typical Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BVDSS -60 V Ni 28 1 x 10 5 ~41 -60 5 To Order Previous Datasheet Index Next Data Sheet IRHM9064 Pre-Radiation Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -35A, VGS = -12 V, 25 ≤ RG ≤ 200Ω ISD ≤ -35A, di/dt ≤−170 A/µs, VDD ≤ BV DSS, T J ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C -12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. * Current is limited by Pin diameter Case Outline and Dimensions — .1 2 ( .00 5 ) .1 2 ( .0 05 ) 1 3 .8 4 ( .54 5 ) 1 3 .5 9 ( .53 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A - -B6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) -B - 13 .84 ( .5 4 5 ) 13 .59 ( .5 3 5 ) 3 .78 ( .1 49 ) 3 .53 ( .1 39 ) - A- 6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) 1 .27 ( .0 50 ) 1 .02 ( .0 40 ) 1 .27 ( .05 0 ) 1 .02 ( .04 0 ) 3 1.4 0 ( 1.2 35 ) 3 0.3 9 ( 1.1 99 ) 2 1.9 8 ( .86 5 ) 2 0.9 5 ( .82 5 ) 20 .32 ( .8 00 ) 20 .07 ( .7 90 ) 1 7.40 ( .6 85 ) 1 6.89 ( .6 65 ) 1 2 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 3 2 0 .3 2 ( .8 00 ) 2 0 .0 7 ( .7 90 ) 1 7 .40 ( .6 85 ) 1 6 .89 ( .6 65 ) L EGE ND 1 1 - C OL L EC TOR W 2 - EMITTER 2 -C - 3X 3 .8 1 ( .1 50 ) 2X 3X 1 .14 ( .0 45 ) 0 .89 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) 1 .5 2 ( .0 60 ) R M IN . 3 .2 3.1 3 - GATE -C - 3 .81 ( .1 50 ) 2X 1 3.8 4 ( .54 5 ) 1 3.5 9 ( .53 5 ) 3 3.8 1 ( .15 0 ) M C A M B M C N OTE S: 1 . D IME NS ION IN G & TOLE RA NC IN G PE R AN SI Y 14 .5M, 1 98 2. 1 .14 ( .0 45 ) 0 .89 ( .0 35 ) .5 0 ( .02 0 ) .2 5 ( .01 0 ) N OTE S : 1. DIME NS ION ING & TOL ER AN C IN G PE R AN S I Y1 4 .5 M-1 9 82 . 2. AL L D IM EN SIONS AR E SH OW N IN MIL LIMETE R S ( IN C HE S ). 3. LE AD FOR M IS A VA IL ABL E IN E ITH ER OR IEN TA TION : 3.1 EXAM PL E : IR FM4 50 0 3.2 EXAM PL E : IR FM4 50 U 4 .8 3 ( .1 90 ) 3 .8 1 ( .1 50 ) 4 .01 ( .15 8 ) 3 .61 ( .14 2 ) M C A M B M C L EGE ND 1 - C OLL EC TOR 2 - EM ITTE R 3 - GATE 2 . AL L D IM EN SIONS A RE S HOW N IN MILL IMETER S ( IN C HE S ). Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblashted, machined, or have other operations perfomed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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