IRF IRHM9250 Simple drive requirement Datasheet

PD-91299E
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
™
®
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHM9250
IRHM93250
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID
QPL Part Number
-14A JANSR2N7423
-14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET ®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rds(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254AA
Features:
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
n
n
n
n
n
n
n
n
n
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
g
For footnotes refer to the last page
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1
05/13/14
IRHM9250, JANSR2N7423
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-200
—
—
V
—
-0.24
—
V/°C
—
—
-2.0
4.0
—
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
-25
-250
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
200
45
85
60
240
225
220
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
nC
VGS = -12V, ID = -9.0A Ã
VGS = -12V, ID = -14A
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -9.0A Ã
VDS= -160V ,VGS = 0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -14A
VDS = -100V
ns
VDD = -100V, ID = -14A
VGS = -12V, RG = 2.35Ω
V
S
µA
nA
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4200
690
160
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-14
-56
-3.6
775
7.2
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -14A, VGS = 0V Ã
Tj = 25°C, IF = -14A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation
Characteristics
Pre-Irradiation
IRHM9250, JANSR2N7423
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
Diode Forward Voltage Ã
100K Rads(Si)1
Min
Max
300K Rads (Si)2 Units
Min
Max
Test Conditions
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.315
-200
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.315
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS , ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS = -160V, VGS = 0V
VGS = -12V, ID = -9.0A
—
0.315
—
0.315
Ω
VGS = -12V, ID = -9.0A
—
-3.6
—
-3.6
V
VGS = 0V, IS = -14A
V
1. IRHM9250 (JANSR2N7423)
2. IRHM93250 (JANSF2N7423)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VD S(V)
Ion
LE T
Me V/(mg/cm²))
Ene rgy
(Me V)
Range
(µm)
@VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-200
-200
-200
200
—
Br
36.8
305
39
-200
-200
-160
-75
—
-250
VDS
-200
-150
Cu
-100
Br
-50
0
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9250, JANSR2N7423
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
10
-5.0V
10
100
-VDS , Drain-to-Source Voltage (V)
3.0
TJ = 150 ° C
V DS = -50V
20µs PULSE WIDTH
6
7
Fig 3. Typical Transfer Characteristics
4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
-VGS , Gate-to-Source Voltage (V)
1
10
100
Fig 2. Typical Output Characteristics
100
5
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
8
ID = -14A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
IRHM9250, JANSR2N7423
6000
Ciss
4000
Coss
2000
Crss
0
1
10
100
ID = -14 A
16
12
8
4
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
50
-VDS , Drain-to-Source Voltage (V)
150
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
100
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
TJ = 25 ° C
10
1
0.1
0.0
VDS = -160V
VDS = -100V
VDS = -40V
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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3.5
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
10ms
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
DC
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM9250, JANSR2N7423
Pre-Irradiation
15
V GS
12
-ID , Drain Current (A)
RD
VDS
D.U.T.
RG
-
+
9
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
0.01
0.0001
0.10
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =t1 / t 2
2. Peak TJ =P DM x ZthJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM9250, JANSR2N7423
EAS , Single Pulse Avalanche Energy (mJ)
1200
L
VDS
ID
-6.3A
-8.9A
BOTTOM -14A
TOP
1000
D.U.T
RG
VGS
-20V
IAS
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
800
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
QG
-12
V
QGS
Current Regulator
Same Type as D.U.T.
50KΩ
-12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM9250, JANSR2N7423
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -50V, starting TJ = 25°C, L =5.1mH
Peak IL = -14A, V GS =-12V
 ISD ≤ -14A, di/dt ≤ -600A/µs,
VDD ≤ -200V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES :
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2014
8
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