Bulletin I27132 rev. H 10/02 IRK.71, .91 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 75 A 95 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.71 IRK.91 Units 75 95 A 165 210 A ITSM @ 50Hz 1665 1785 A IFSM @ 60Hz 1740 1870 A @ 50Hz 13.86 15.91 KA 2s @ 60Hz 12.56 14.52 KA2s 138.6 159.1 KA 2√s IT(AV) or IF(AV) @ 85°C IO(RMS) (*) 2 I t 2 I √t V RRM range 400 to 1600 V TSTG - 40 to 125 o C TJ - 40 to125 o C (*) As AC switch. www.irf.com 1 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code IRK.71/ .91 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit - V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRRM IDRM 125°C mA 15 On-state Conduction Parameters IRK.71 IRK.91 75 95 IO(RMS) Max. continuous RMS on-state current. As AC switch 165 210 ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage or non-repetitive on-state 1740 1870 t=8.3ms reapplied IFSM or forward current IT(AV) current (Thyristors) IF(AV) Units Conditions Max. average on-state Max. average forward 180o conduction, half sine wave, TC = 85oC current (Diodes) I2 t I2√t Max. I2t for fusing Max. I2√t for fusing (1) VT(TO) Max. value of threshold voltage (2) rt 1400 1500 t=10ms 100% VRRM 1570 t=8.3ms reapplied 1850 2000 t=10ms TJ = 25oC, 2100 t=8.3ms no voltage reapplied t=10ms No voltage 12.56 14.52 t=8.3ms reapplied 9.80 11.25 t=10ms 100% VRRM 8.96 10.27 17.11 20.00 15.60 18.30 138.6 159.1 0.82 0.80 0.85 0.85 2.40 2.25 1.59 1.58 di/dt Max. non-repetitive rate of rise of turned on KA2s Max. holding current Max. latching current (1) I2t for time tx = I2√t x √tx (4) I > π x IAV 2 t=8.3ms reapplied t= 8.3ms no voltage reapplied KA2√s V t=0.1 to 10ms, no voltage reapplied Low level (3) TJ = TJ max High level (4) Low level mΩ V (3) TJ = TJ max High level (4) ITM = π x IT(AV) TJ = 25°C IFM = π x IF(AV) TJ = 25oC, from 0.67 VDRM, 150 A/µs ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, 200 mA IL Initial TJ = TJ max. t=10ms TJ = 25oC, current IH Initial TJ = TJ max. 15.91 3.00 forward voltage Sinusoidal half wave, 1940 2.90 Max. peak on-state or I(RMS) 13.86 slope resistance (2) VTM or 1470 Max. value of on-state VFM I(RMS) A 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Triggering Parameters IRK.71 12 12 PG(AV) Max. average gate power 3.0 3.0 IGM 3.0 3.0 PGM Max. peak gate power IRK.91 Max. peak gate current -VGM Max. peak negative VGT gate voltage 10 Max. gate voltage 4.0 required to trigger Units W A TJ = - 40°C V 2.5 TJ = 25°C 1.7 IGT Max. gate current required to trigger TJ = 125°C 270 150 TJ = - 40°C TJ = 25°C mA TJ = 125°C 80 VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger Conditions 0.25 V 6 mA Anode supply = 6V resistive load Anode supply = 6V resistive load TJ = 125oC, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRK.71 IRRM Max. peak reverse and IDRM off-state leakage current IRK.91 Units 15 Conditions TJ = 125 oC, gate open circuit mA at VRRM, VDRM 2500 (1 min) VINS 50 Hz, circuit to base, all terminals RMS isolation voltage V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) shorted 500 TJ = 125oC, linear to 0.67 VDRM, gate open circuit V/µs (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90. Thermal and Mechanical Specifications Parameters IRK.71 TJ Junction operating temperature range Tstg Storage temp. range IRK.91 Units Conditions - 40 to 125 °C - 40 to 125 RthJC Max. internal thermal resistance, junction 0.165 0.135 Per module, DC operation to case K/W RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound 5 to heatsink Nm busbar wt Mounting surface flat, smooth and greased 0.1 3 Approximate weight 110 (4) Case style gr (oz) TO-240AA JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.71 IRK.91 Sine half wave conduction 180o 0.06 0.04 www.irf.com 120o 0.07 0.05 90o 0.09 0.06 60o 0.12 0.08 Rect. wave conduction 30o 0.18 0.12 180o 0.04 0.03 120o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12 Units °C/W 3 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Ordering Information Table Device Code IRK T 91 1 2 3 / 16 A S90 4 5 6 IRK.92 types With no auxiliary cathode 1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92 e.g. : IRKT92/16A etc. S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.71, .91 Series IRK.71.. Series R thJC (DC) = 0.33 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 180° 70 0 10 20 30 40 50 60 70 80 120 110 Conduction Period 100 90 30° 80 70 0 20 RMS Limit 40 Conduction Angle IRK.71.. Series Per Junction T J = 125°C 20 10 20 30 40 50 60 70 80 1200 1100 1000 900 IRK.71.. Series Per Junction 800 700 100 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com 120 DC 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduction Period 40 IRK.71.. Series Per Junction T J = 125°C 20 0 0 20 40 60 80 100 120 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1300 80 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1400 60 DC 140 Average On-state Current (A) 1500 40 180° Fig. 2 - Current Ratings Characteristics 80 1600 60° 90° 120° Fig. 1 - Current Ratings Characteristics 180° 120° 90° 60° 30° 0 IRK.71.. Series R thJC (DC) = 0.33 K/W Average On-state Current (A) 100 0 130 Average On-state Current (A) 120 60 Maximum Allowable Case Temperature (°C) 130 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27132 rev. H 10/02 1800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRMReapplied 1600 1400 1200 1000 800 IRK.71.. Series Per Junction 600 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 2 60 R IRK.71.. Series Per Module T J = 125°C 40 ta el -D 1 .5 50 20 /W 1K Conduction Angle 0 W K/ W 1K /W 100 0 K/ W K/ 0.7 0. 150 = 0. 5 W K/ 0. 4 W K/ 3 0. 200 SA R th 180° 120° 90° 60° 30° 0. Maximum Total On-state Power Loss (W) 250 K/ W 3 K/W 0 80 100 120 140 160 180 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 7 - On-state Power Loss Characteristics 180° (Sine) 180° (Rect) = 1 0. 200 0.5 K 2 x IRK.71.. Series Single Phase Bridge Connected T J = 125°C 100 0 0 20 40 60 K/ W 1 K/ /W W 2 K/ W 80 100 120 140 160 180 0 Total Output Current (A) W R 0. 3 lta e K/ 300 -D 0. 2 W K/ 400 SA 500 h Rt Maximum Total Power Loss (W) 600 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-state Power Loss Characteristics 700 R 600 SA th Maximum Total Power Loss (W) 800 500 120° (Rect) 400 0.2 0.3 300 3 x IRK.71.. Series Three Phase Bridge Connected T J = 125°C 200 100 0 0 40 80 120 160 Total Output Current (A) 200 0 .5 = 0. 1 K/ W K/ W -D el ta R K/ W K/W 1 K/W 0 240 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.71, .91 Series IRK.91.. Series R thJC (DC) = 0.27 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 80 0 20 40 60 80 100 110 Conduction Period 100 90 30° 60° 90° 120° 80 70 0 20 40 60 80 180° DC 100 120 140 160 Fig. 11 - Current Ratings Characteristics 180° 120° 90° 60° 30° 100 RMS Limit 60 Conduction Angle 40 IRK.91.. Series Per Junction T J = 125°C 20 0 20 40 60 80 100 180 DC 180° 120° 90° 60° 30° 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.91.. Series Per Junction T J = 125°C 40 20 0 0 20 40 60 80 100 120 140 160 Average On-state Current (A) Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics Fig. 13 - On-state Power Loss Characteristics 1600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 1400 1300 1200 1100 1000 900 IRK.91.. Series Per Junction 800 700 120 Fig. 10 - Current Ratings Characteristics 120 0 IRK.91.. Series R thJC (DC) = 0.27 K/W Average On-state Current (A) 140 80 130 Average On-state Current (A) Maximum Average On-state Power Loss (W) 70 180° Maximum Allowable Case Temperature (°C) 130 1 10 100 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27132 rev. H 10/02 1800 1600 1400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125°C No Voltage Reapplied Rated VRRM Reapplied 1200 1000 800 IRK.91.. Series Per Junction 600 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 7 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 40 80 120 160 200 R IRK.91.. Series Per Module T J = 125°C 0 K/ W K/ W 1K /W 1.5 K /W 100 50 a elt -D 0.7 Conduction Angle K/ W K/ W 0.5 150 0 3 W K/ 200 0. 1 0. 250 0. 2 = 180° 120° 90° 60° 30° SA 300 R th Maximum Total On-state Power Loss (W) 350 3 K/W 0 240 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 16 - On-state Power Loss Characteristics 180° (Sine) 180° (Rect) = 1 0. 0. 2 2 x IRK.91.. Series Single Phase Bridge Connected T J = 125°C 100 0 0 40 80 120 160 K/ W K/ W 1 K/ W 2 K/ W 200 0 Total Output Current (A) R 0 .5 200 ta el 300 K/ W -D 0.3 W K/ 400 SA 500 h Rt Maximum Total Power Loss (W) 600 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-state Power Loss Characteristics 800 R 700 SA th Maximum Total Power Loss (W) 900 600 120° (Rect) 500 0.3 3 x IRK.91.. Series Three Phase Bridge Connected T J = 125°C 200 100 0 0 40 80 120 160 0. 1 0.2 K/ W 400 300 = 200 Total Output Current (A) 240 K/ W -D el ta R K/ W 0.5 K /W 1 K/W 280 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-state Power Loss Characteristics 8 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 1000 T J= 25°C 10 T J= 125°C IRK.71.. Series Per Junction 1 0.5 Maximum Reverse Recovery Charge - Qrr (µC) Instantaneous On-state Current (A) 100 1 1.5 2 2.5 3 3.5 100 T J= 25°C T J= 125°C 10 IRK.91.. Series Per Junction 1 0.5 4 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics 700 I TM = 200 A IRK.71.. Series IRK.91.. Series T J = 125 °C 600 Maximum Reverse Recovery Current - Irr (A) Instantaneous On-state Current (A) 1000 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 90 100 140 I TM = 200 A 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/dt (A/µs) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 21 - Recovery Charge Characteristics Transient Thermal Impedance Z thJC (K/W) IRK.71.. Series IRK.91.. Series T J = 125 °C 120 Fig. 22 - Recovery Current Characteristics 1 Steady State Value: R thJC = 0.33 K/W R thJC = 0.27 K/W (DC Operation) IRK.71.. Series IRK.91.. Series 0.1 Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 23 - Thermal Impedance ZthJC Characteristics www.irf.com 9 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms 10 tr = 1 µs, tp >= 6 µs TJ = 125 °C 1 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 °C (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.71../.91.. Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 10 www.irf.com