PD - 95456
IRLIZ44NPbF
Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
l Lead-Free
Description
HEXFET® Power MOSFET
l
D
VDSS = 55V
RDS(on) = 0.022Ω
G
ID = 30A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
V GS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
30
22
160
45
0.3
± 16
210
25
4.5
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
3.3
65
°C/W
6/23/04
IRLIZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
IGSS
Min.
55
1.0
21
Typ.
0.070
11
84
26
15
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.022
VGS = 10V, ID = 17A
0.025
Ω
VGS = 5.0V, ID = 17A
0.035
VGS = 4.0V, ID = 14A
2.0
V
VDS = VGS , ID = 250µA
S
VDS = 25V, ID = 25A
25
VDS = 55V, V GS = 0V
µA
250
VDS = 44V, V GS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
48
ID = 25A
8.6
nC VDS = 44V
25
VGS = 5.0V, See Fig. 6 and 13
VDD = 28V
ID = 25A
ns
RG = 3.4Ω, VGS = 5.0V
RD = 1.1Ω, See Fig. 10
Between lead,
4.5
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
1700
VGS = 0V
400
VDS = 25V
pF
150
= 1.0MHz, See Fig. 5
12
= 1.0MHz
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
T J ≤ 175°C
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
30
showing the
A
G
integral reverse
160
p-n junction diode.
S
1.3
V
TJ = 25°C, IS = 17A, VGS = 0V
80 120
ns
TJ = 25°C, IF = 25A
210 320
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, =60Hz
Uses IRLZ44N data and test conditions
D
S
IRLIZ44NPbF
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
A
10
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
20µs PULSE WIDTH
T J = 175°C
1
10
A
100
Fig 2. Typical Output Characteristics
1000
1
2.5V
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
I D , Drain-to-Source Current (A)
100
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
9.0
A
I D = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLIZ44NPbF
2800
15
2400
VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
C, Capacitance (pF)
2000
1600
Coss
1200
800
Crss
400
0
1
10
100
I D = 25A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
70
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
VGS = 0V
10
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
A
100
IRLIZ44NPbF
35
RD
V DS
ID , Drain Current (A)
30
VGS
D.U.T.
RG
25
20
+
-VDD
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
L
VDS
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
IRLIZ44NPbF
500
TOP
BOTTOM
400
ID
10A
17A
25A
300
200
100
0
VDD = 25V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
tp
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
A
175
IRLIZ44NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLIZ44NPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E :
T H IS IS AN IR F I8 4 0 G
W IT H AS S E M B L Y
L OT CODE 3 432
AS S E M B L E D O N W W 2 4 1 9 9 9
IN T H E AS S E M B L Y L IN E "K "
Note: "P" in assembly line
position indicates "Lead-Free"
IN T E R N AT IO N AL
R E CT IF IE R
L OGO
AS S E M B L Y
L OT CODE
P AR T N U M B E R
IR F I8 40 G
924 K
34
32
D AT E C O D E
Y E AR 9 = 1 9 9 9
WE E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04