ISSI IS61VF204818A-7.5TQ 36mb synchronous flow-through static ram Datasheet

IS61LF102436A IS61VF102436A
IS61LF204818A IS61VF204818A
1M x 36, 2M x 18
36Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VF: Vdd 2.5V + 5%, Vddq 2.5V + 5%
• JEDEC 100-Pin TQFP and 165-pin PBGA packages.
• Lead-free available
APRIL 2008
DESCRIPTION
The ISSI IS61LF/VF102436A and IS61LF/VF204818A
are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for
communication and networking applications. The IS61LF/
VF102436A is organized as 1,048,476 words by 36 bits.
The IS61LF/VF204818A is organized as 2M-words by 18
bits. Fabricated with ISSI's advanced CMOS technology,
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
tkq
tkc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
1
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
BLOCK DIAGRAM
MODE
Q0
CLK
CLK
A0
BINARY
COUNTER
ADSC
ADSP
A
Q1
CE
ADV
A1
A0'
A1'
1Mx36;
2Mx18;
MEMORY ARRAY
CLR
20/21
D
Q
18/19
20/21
ADDRESS
REGISTER
CE
CLK
36,
or 18
D
GW
BWE
BW(a-d)
x18: a,b
x36: a-d
36,
or 18
Q
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
CE
2/4/8
Q
CE2
D
CE2
ENABLE
REGISTER
INPUT
REGISTERS
CLK
36,
or 18
DQa - DQd
OE
CE
CLK
ZZ
POWER
DOWN
OE
2
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165-pin BGA
165-Ball, 13x15 mm BGA
Bottom view
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
3
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165 PBGA PACKAGE PIN CONFIGURATION
1M x 36 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWc
BWb
CE2
BWE
ADSC
ADV
A
NC
B
NC
A
CE2
BWd
BWa
CLK
GW
OE
ADSP
A
C
DQPc
NC
Vddq
Vss
Vss
Vss
Vss
Vss
Vddq
NC
D
DQc
DQc
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
DQb
DQb
E
DQc
DQc
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
DQb
DQb
F
DQc
DQc
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
DQb
DQb
G
DQc
DQc
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
DQb
DQb
H
NC
NC
NC
Vdd
Vss
Vss
Vss
Vdd
NC
NC
ZZ
NC
DQPb
J
DQd
DQd
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQaDQa
K
DQd
DQd
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQaDQa
L
DQd
DQd
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQaDQa
M
DQd
DQd
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQaDQa
N
DQPd
NC
Vddq
Vss
NC
A
NC
Vss
Vddq
NC DQPa
P
NC
NC
A
A
NC
A1*
NC
A
A
A
A
R
MODE
A
A
A
NC
A0*
NC
A
A
A
A
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
(Under Evaluation)
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
Pin Name
BWE
Byte Write Enable
A0, A1
OE
Output Enable
ZZ
Power Sleep Mode
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Inputs
Synchronous Burst Address
Advance.
Address Status Processor
ADSC
GW
Address Status Controller
Global Write Enable
CLK
CE, CE2, CE2
Synchronous Clock
Synchronous Chip Select
NC
DQa-DQd
DQPa-Pd
Vdd
Vddq
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Power Supply
BWx (x=a,b,c,d)
Synchronous Byte Write
Controls
Vss
Ground
ADV
4
Output Power Supply Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
165 PBGA PACKAGE PIN CONFIGURATION
2M x 18 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWb
NC
CE2
BWE
ADSC
ADV
A
A
B
NC
A
CE2
NC
BWa
CLK
GW
OE
ADSP
A
NC
C
NC
NC
Vddq
Vss
Vss
Vss
Vss
Vss
Vddq
NC
DQPa
D
NC
DQb
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
NC
DQa
E
NC
DQb
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
NC
DQa
F
NC
DQb
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
NC
DQa
G
NC
DQb
Vddq
Vdd
Vss
Vss
Vss
Vdd
Vddq
NC
DQa
H
NC
NC
NC
Vdd
Vss
Vss
Vss
Vdd
NC
NC
J
DQb
NC
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQa
NC
K
DQb
NC
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQa
NC
L
DQb
NC
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQa
NC
M
DQb
NC
Vddq
Vdd
Vss
Vss
Vss
Vdd
VddqDQa
NC
ZZ
N
DQPb
NC
Vddq
Vss
NC
A
NC
Vss
Vddq
NC
NC
P
NC
NC
A
A
NC
A1*
NC
A
A
A
A
R
MODE
A
A
A
NC
A0*
NC
A
A
A
A
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
(Under Evaluation)
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
BWE
Byte Write Enable
A0, A1
OE
Output Enable
ZZ
Power Sleep Mode
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Inputs
Synchronous Burst Address
Advance.
Address Status Processor
ADSC
GW
Address Status Controller
Global Write Enable
CLK
CE, CE2, CE2
Synchronous Clock
Synchronous Chip Select
NC
DQa-DQd
DQPa-Pd
Vdd
Vddq
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Power Supply
BWx (x=a,b)
Synchronous Byte Write
Controls
Vss
Ground
ADV
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
Pin Name
Output Power Supply
5
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
PIN CONFIGURATION
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP
DQPc
DQPb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQPa
MODE
A
A
A
A
A1
A0
NC
A
VSS
VDD
A
A
A
A
A
A
A
A
A
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
1M x 36
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
ADSC
Synchronous Controller Address Status
ADSP
Synchronous Processor Address Status
ADV
Synchronous Burst Address Advance
BWa-BWd
Synchronous Byte Write Enable
BWE
Synchronous Byte Write Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
Synchronous Clock
DQa-DQd
Synchronous Data Input/Output
6
DQPa-DQPd
Vss
GW
MODE
OE
Vdd
Vddq
ZZ
Parity Data Input/Output
Ground
Synchronous Global Write Enable
Burst Sequence Mode Selection
Output Enable
3.3V/2.5V Power Supply
Isolated Output Buffer Supply:
3.3V/2.5V
Snooze Enable
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
PIN CONFIGURATION
A
A
CE
CE2
NC
NC
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
MODE
A
A
A
A
A1
A0
NC
A
VSS
VDD
A
A
A
A
A
A
A
A
A
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQPb
NC
VSS
VDDQ
NC
NC
NC
2M x 18
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
Synchronous Controller Address Status
ADSC
ADSP
Synchronous Processor Address Status
ADV
Synchronous Burst Address Advance
BWa-BWb
Synchronous Byte Write Enable
BWE
Synchronous Byte Write Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
Synchronous Clock
DQa-DQb
Synchronous Data Input/Output
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
DQPa-DQPb
Vss
GW
MODE
OE
Vdd
Vddq
ZZ
Parity Data I/O; DQPa is parity for
DQa1-8; DQPb is parity for DQb1-8
Ground
Synchronous Global Write Enable
Burst Sequence Mode Selection
Output Enable
3.3V/2.5V Power Supply
Isolated Output Buffer Supply:
3.3V/2.5V
Snooze Enable
7
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
TRUTH TABLE(1-8) (3CE option)
OPERATION
Deselect Cycle, Power-Down
Deselect Cycle, Power-Down
Deselect Cycle, Power-Down
Deselect Cycle, Power-Down
Deselect Cycle, Power-Down
Snooze Mode, Power-Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
ADDRESS
None
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
CE
H
L
L
L
L
X
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
CE2
X
X
H
X
H
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
CE2
X
L
X
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
ZZ
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
ADSP ADSC
X
L
L
X
L
X
H
L
H
L
X
X
L
X
L
X
H
L
H
L
H
L
H
H
H
H
X
H
X
H
H
H
X
H
H
H
H
H
X
H
X
H
H
H
X
H
ADV WRITE
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
H
X
H
L
H
L
H
L
H
L
H
L
L
L
L
H
H
H
H
H
H
H
H
H
L
H
L
OE
X
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
CLK
L-H
L-H
L-H
L-H
L-H
X
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
DQ
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Q
High-Z
D
Q
High-Z
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For WRITE, L means one or more byte write enable signals (BWa-h) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s
and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are available
on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
8
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
INTERLEAVED BURST ADDRESS TABLE (MODE = Vdd or No Connect)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Address
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = Vss)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Tstg
Pd
Iout
Vin, Vout
Vin
Vdd
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for I/O Pins
Voltage Relative to Vss for
for Address and Control Inputs
Voltage on Vdd Supply Relative to Vss
Value
–55 to +150
1.6
100
–0.5 to Vddq + 0.5
–0.5 to Vdd + 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
9
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
Vdd
3.3V ± 5%
3.3V ± 5%
Vddq
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
Vdd
2.5V ± 5%
2.5V ± 5%
Vddq
2.5V ± 5%
2.5V ± 5%
OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
Symbol Parameter
Voh
Output HIGH Voltage
Vol
Output LOW Voltage
Vih
Input HIGH Voltage
Vil
Input LOW Voltage
Ili
Input Leakage Current
Ilo
Output Leakage Current
Test Conditions
Min.
Ioh = –4.0 mA (3.3V)
2.4
Ioh = –1.0 mA (2.5V)
Iol = 8.0 mA (3.3V)
—
Iol = 1.0 mA (2.5V)
2.0
–0.3
Vss ≤ Vin ≤ Vdd(1)
–5
Vss ≤ Vout ≤ Vddq, OE = Vih
–5
2.5V
Max.
—
Min.
2.0
Max.
—
Unit
V
0.4
—
0.4
V
Vdd + 0.3
0.8
5
5
1.7
–0.3
–5
–5
Vdd + 0.3
0.7
5
5
V
V
µA
µA
Note:
1. Vil (min.) = –2.0V AC (pulse width ­2.0 ns). Not 100% tested.
Vih (max.) = Vdd + 2.0V AC (pulse width ­2.0 ns). Not 100% tested.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Icc
AC Operating
Supply Current
Isb
Standby Current
TTL Input
Isbi
Standby Current
CMOS Input
Test Conditions
Temp. range
Device Selected,
Com.
OE = Vih, ZZ ≤ Vil,
Ind.
All Inputs ≤ 0.2V or ≥ Vdd – 0.2V, typ.(2)
Cycle Time ≥ tkc min.
Device Deselected,
Com.
Vdd = Max.,
Ind.
All Inputs ≤ Vil or ≥ Vih,
ZZ ≤ Vil, f = Max.
Device Deselected,
Com.
Vdd = Max.,
Ind.
Vin ≤ Vss + 0.2V or ≥Vdd – 0.2V typ.(2)
f=0
6.5
MAX
x18
x36
360
360
375
375
295
7.5
MAX
x18
x36
340 340
350 350
295
Unit
mA
155
160
155
160
155
160
155
160
mA
140
145
140
145
80
140
145
140
145
mA
80
Note:
1. MODE pin has an internal pullup and should be tied to Vdd or Vss. It exhibits ±100 µA maximum leakage current when tied to ≤
Vss + 0.2V or ≥ Vdd – 0.2V.
2. Typical values are measured at Vcc = 3.3V, TA = 25oC and not 100% tested.
10
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
CAPACITANCE(1,2)
Symbol
Cin
Cout
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
317 Ω
3.3V
ZO = 50Ω
OUTPUT
50Ω
1.5V
Figure 1
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
OUTPUT
5 pF
Including
jig and
scope
351 Ω
Figure 2
11
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
2.5V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
1.5 ns
1.25V
See Figures 3 and 4
2.5V I/O OUTPUT LOAD EQUIVALENT
1,667 Ω
+2.5V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
1,538 Ω
1.25V
Figure 3
12
Figure 4
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
fmax
tkc
tkh
tkl
tkq
tkqx(2)
tkqlz(2,3)
tkqhz(2,3)
toeq
toelz(2,3)
toehz(2,3)
tas
tws
tces
tavs
tds
tah
twh
tceh
tavh
tdh
tpds
tpus
Notes:
Parameter
Clock Frequency
Cycle Time
Clock High Time
Clock Low Time
Clock Access Time
Clock High to Output Invalid
Clock High to Output Low-Z
Clock High to Output High-Z
Output Enable to Output Valid
Output Enable to Output Low-Z
Output Disable to Output High-Z
Address Setup Time
Read/Write Setup Time
Chip Enable Setup Time
Address Advance Setup Time
Data Setup Time
Address Hold Time
Write Hold Time
Chip Enable Hold Time
Address Advance Hold Time
Data Hold Time
ZZ High to Power Down
ZZ Low to Power Down
6.5
Min.
—
7.5
2.2
2.2
—
2.5
2.5
—
—
0
—
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
—
—
Max.
133
—
—
—
6.5
—
—
3.8
3.2
—
3.5
—
—
—
—
—
—
—
—
—
—
2
2
7.5
Min. Max.
—
117
8.5
—
2.5
—
2.5
—
—
7.5
2.5
—
2.5
—
—
4.0
—
3.4
0
—
—
3.5
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
—
2
—
2
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cyc
cyc
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
13
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
READ/WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE inactive
ADSP
tSS
tSH
ADSC
ADV
tAS
Address
tAH
RD1
WR1
tWS
tWH
tWS
tWH
RD2
RD3
GW
BWE
tWS
tWH
WR1
BWd-BWa
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE Masks ADSP
CE
CE2 and CE2 only sampled with ADSP or ADSC
CE2
Unselected with CE2
CE2
tOEHZ
OE
tKQX
tOEQX
DATAOUT
High-Z
tKQX
tKQ
DATAIN
High-Z
tKQLZ
tKQ
1a
tKQLZ
2b
2c
2d
tKQHZ
tKQHZ
1a
High-Z
tDS
Single Read
Flow-through
14
2a
tDH
Single Write
Burst Read
Unselected
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
ADSC initiate Write
ADSC
ADV must be inactive for ADSP Write tAVS
tAVH
ADV
tAS
Address
tAH
WR1
WR2
tWS
tWH
tWS
tWH
tWS
tWH
WR3
GW
BWE
BWd-BWa
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
tWS
tWH
WR2
WR3
CE1 Masks ADSP
CE
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE2
OE
DATAOUT
High-Z
tDS
DATAIN
High-Z
tDH
1a
Single Write
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
BW4-BW1 only are applied to first cycle of WR2
2a
2b
2c
2d
Burst Write
3a
Write
Unselected
15
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
ZZ ≥ Vih
Min.
typ. (1)
Max.
—
27
Unit
Isb2
Current during SNOOZE MODE
90
mA
tpds
ZZ active to input ignored
—
2
cycle
tpus
ZZ inactive to input sampled
2
—
cycle
tzzi
ZZ active to SNOOZE current
—
2
cycle
trzzi
ZZ inactive to exit SNOOZE current
0
—
ns
1. Typical values are measured at Vcc = 3.3V, TA = 25oC and not 100% tested.
SNOOZE MODE TIMING
CLK
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All Inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
16
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
ORDERING INFORMATION (Vdd = 3.3V/Vddq = 2.5V/3.3V)
Commercial Range: 0°C to +70°C
Configuration
1Mx36
2Mx18
Access Time
6.5
6.5
Order Part Number
IS61LF102436A-6.5TQL
IS61LF102436A-6.5B3
IS61LF204818A-6.5TQ
IS61LF204818A-6.5TQL
IS61LF204818A-6.5B3
Package
100 TQFP, Lead-free
165 PBGA
100 TQFP
100 TQFP, Lead-free
165 PBGA
Order Part Number
IS61LF102436A-6.5TQLI
IS61LF102436A-6.5B3I
IS61LF102436A-7.5TQI
IS61LF102436A-7.5TQLI
IS61LF102436A-7.5B3I
IS61LF102436A-7.5B3LI
IS61LF204818A-6.5TQI
IS61LF204818A-6.5B3I
IS61LF204818A-7.5TQI
IS61LF204818A-7.5TQLI
IS61LF204818A-7.5B3I
Package
100 TQFP, Lead-free
165 PBGA
100 TQFP
100 TQFP, Lead-free
165 PBGA
165 PBGA, Lead-free
100 TQFP
165 PBGA
100 TQFP
100 TQFP, Lead-free
165 PBGA
Industrial Range: -40°C to +85°C
Configuration
1Mx36
Access Time
6.5
1Mx36
7.5
2Mx18
6.5
2Mx18
7.5
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
17
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
ORDERING INFORMATION (Vdd = 2.5V /Vddq = 2.5V)
Commercial Range: 0°C to +70°C
Configuration
1Mx36
Access Time
6.5
1Mx36
7.5
2Mx18
6.5
2Mx18
7.5
Order Part Number
IS61VF102436A-6.5TQ
IS61VF102436A-6.5B3
IS61VF102436A-7.5TQ
IS61VF102436A-7.5B3
IS61VF204818A-6.5TQ
IS61VF204818A-6.5B3
IS61VF204818A-7.5TQ
IS61VF204818A-7.5B3
Package
100 TQFP
165 PBGA
100 TQFP
165 PBGA
100 TQFP
165 PBGA
100 TQFP
165 PBGA
Order Part Number
IS61VF102436A-6.5TQI
IS61VF102436A-6.5B3I
IS61VF102436A-7.5TQI
IS61VF102436A-7.5TQLI
IS61VF102436A-7.5B3I
IS61VF204818A-6.5TQI
IS61VF204818A-6.5B3I
IS61VF204818A-7.5TQI
IS61VF204818A-7.5B3I
Package
100 TQFP
165 PBGA
100 TQFP
100 TQFP, Lead-free
165 PBGA
100 TQFP
165 PBGA
100 TQFP
165 PBGA
Industrial Range: -40°C to +85°C
Configuration
1Mx36
Access Time
6.5
1Mx36
7.5
2Mx18
6.5
2Mx18
7.5
18
Integrated Silicon Solution, Inc.
Rev. B
04/17/08
PACKAGING INFORMATION
TQFP (Thin Quad Flat Pack Package)
Package Code: TQ
D
D1
E
E1
N
L1
L
C
1
e
SEATING
PLANE
A2
A
b
A1
Millimeters
Min
Max
Thin Quad Flat Pack (TQ)
Inches
Millimeters
Min
Max
Min
Max
Symbol
Ref. Std.
No. Leads (N)
100
A
—
1.60
—
0.063
A1
0.05 0.15
0.002 0.006
A2
1.35 1.45
0.053 0.057
b
0.22 0.38
0.009 0.015
D
21.90 22.10
0.862 0.870
D1
19.90 20.10
0.783 0.791
E
15.90 16.10
0.626 0.634
E1
13.90 14.10
0.547 0.555
e
0.65 BSC
0.026 BSC
L
0.45 0.75
0.018 0.030
L1
1.00 REF.
0.039 REF.
o
o
C
0
7
0o
7o
128
—
1.60
0.05 0.15
1.35 1.45
0.17 0.27
21.80 22.20
19.90 20.10
15.80 16.20
13.90 14.10
0.50 BSC
0.45 0.75
1.00 REF.
0o
7o
Integrated Silicon Solution, Inc. — 1-800-379-4774
PK13197LQ Rev. D 05/08/03
Inches
Min
Max
—
0.063
0.002 0.006
0.053 0.057
0.007 0.011
0.858 0.874
0.783 0.791
0.622 0.638
0.547 0.555
0.020 BSC
0.018 0.030
0.039 REF.
0o
7o
Notes:
1. All dimensioning and
tolerancing conforms to
ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do
not include mold protrusions.
Allowable protrusion is 0.25
mm per side. D1 and E1 do
include mold mismatch and
are determined at datum
plane -H-.
3. Controlling dimension:
millimeters.
PACKAGING INFORMATION
Ball Grid Array
Package Code: B (165-pin)
BOTTOM VIEW
TOP VIEW
A1 CORNER
1
2
3
4
A1 CORNER
φ b (165X)
5
6
7
8
9
10
11 10
11
9
8
7
6
5
4
3
2
1
A
A
B
B
C
C
D
D
E
E
e
F
F
G
G
D D1
H
H
J
J
K
K
L
L
M
M
N
N
P
P
R
R
E1
E
A2
e
A
A1
BGA - 13mm x 15mm
MILLIMETERS
Sym.
Min.
N0.
Leads
Nom. Max.
Notes:
1. Controlling dimensions are in millimeters.
INCHES
Min.
165
Nom. Max.
165
A
—
—
1.20
—
A1
0.25
0.33
0.40
0.010
—
0.047
0.013 0.016
A2
—
0.79
—
—
0.031
—
D
14.90
15.00
15.10
0.587
0.591
0.594
D1
13.90
14.00
14.10
0.547
0.551
0.555
E
12.90
13.00
13.10
0.508
0.512
0.516
E1
9.90
10.00
10.10
0.390
0.394
0.398
e
—
1.00
—
—
0.039
—
b
0.40
0.45
0.50
0.016
0.018
0.020
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
06/11/03