Integral IW4001B Quad 2-input nor gate high-voltage silicon-gate cmo Datasheet

TECHNICAL DATA
IW4001B
Quad 2-Input NOR Gate
High-Voltage Silicon-Gate CMOS
The IW4001B NOR gates provide the system designer with direct
emplementation of the NOR function.
• Operating Voltage Range: 3.0 to 18 V
• Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C
• Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
ORDERING INFORMATION
IW4001BN Plastic
IW4001BD SOIC
TA = -55° to 125° C for all packages
LOGIC DIAGRAM
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
PIN 14 =VCC
PIN 7 = GND
Output
A
B
Y
L
L
H
L
H
L
H
L
L
H
H
L
3
IW4001B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +20
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
VOUT
IIN
DC Input Current, per Pin
±10
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
PD
Power Dissipation per Output Transistor
100
mW
-65 to +150
°C
260
°C
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
TA
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
Max
Unit
3.0
18
V
0
VCC
V
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND≤(VIN or VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.
4
IW4001B
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
VCC
Guaranteed Limit
V
≥-55°C
25°C
≤125
°C
Unit
5.0
10
15
3.5
7
11
3.5
7
11
3.5
7
11
V
Maximum Low -Level VOUT=0.5 V or VCC - 0.5 V
Input Voltage
VOUT=1.0 V or VCC - 1.0 V
VOUT=1.5 V or VCC - 1.5 V
5.0
10
15
1.5
3
4
1.5
3
4
1.5
3
4
V
VOH
Minimum High-Level
Output Voltage
VIN=GND
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
VOL
Maximum Low-Level
Output Voltage
VIN=GND or VCC
5.0
10
15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
IIN
Maximum Input
Leakage Current
VIN= GND or VCC
18
±0.1
±0.1
±1.0
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN= GND or VCC
5.0
10
15
20
0.25
0.5
1.0
5.0
0.25
0.5
1.0
5.0
7.5
15
30
150
µA
IOL
Minimum Output Low VIN= GND or VCC
(Sink) Current
UOL=0.4 V
UOL=0.5 V
UOL=1.5 V
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.36
0.9
2.4
Minimum Output
VIN= GND or VCC
High (Source) Current UOH=2.5 V
UOH=4.6 V
UOH=9.5 V
UOH=13.5 V
5.0
5.0
10
15
-2.0
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
IOH
Test Conditions
VOUT=0.5V
VOUT=1.0 V
VOUT=1.5V
mA
mA
5
IW4001B
AC ELECTRICAL CHARACTERISTICS(CL=50pF, RL=200kΩ, Input tr=tf=20 ns)
Guaranteed Limit
VCC
Symbol
Parameter
V
≥-55°C
25°C
≤125°C
Unit
tPLH, tPHL
Maximum Propagation Delay, Input A or B to
Output Y (Figure 1)
5.0
10
15
250
120
90
250
120
90
500
240
180
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figure 1)
5.0
10
15
200
100
80
200
100
80
400
200
160
ns
CIN
Maximum Input Capacitance
-
Figure 1. Switching Waveforms
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)
6
7.5
pF
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