IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two Drivers in Single Chip The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates CMOS power supply cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. Applications • • • • • • • • • • Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers Limiting di/dt Under Short Circuit The IXDN404 is configured as a dual non-inverting gate driver, the IXDI404 is a dual inverting gate driver, and the IXDF404 is a dual inverting + non-inverting gate driver. The IXDN404/IXDI404/IXDF404 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available in a package with an exposed grounded metal back as the SI and SI-16 repectively. Ordering Information Part Number IXDN404PI IXDN404SI IXDN404SIA IXDN404SI-16 IXDN404SIA-16 IXDI404PI IXDI404SI IXDI404SIA IXDI404SI-16 IXDI404SIA-16 IXDF404PI IXDF404SI IXDF404SIA IXDF404SI-16 IXDF404SIA-16 Package Type 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC 8-Pin PDIP 8-Pin SOIC with Grounded Metal Back 8-Pin SOIC 16-Pin SOIC with Grounded Metal Back 16-Pin SOIC Temp. Range Configuration -55°C to +125°C Dual Non Inverting -55°C to +125°C Dual Inverting -55°C to +125°C Inverting + Non Inverting NOTE: Mounting or solder tabs on all packages are connected to ground DS99018B(08/04) Copyright © IXYS CORPORATION 2004 First Release IXDN404 / IXDI404 / IXDF404 Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram Vcc IN A IN B ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N P OUT B N GND Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram Vcc IN A IN B ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * P OUT A N P OUT B N GND Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram Vcc IN A IN B * Patent Pending ANTI-CROSS CONDUCTION CIRCUIT * ANTI-CROSS CONDUCTION CIRCUIT * GND 2 P OUT A N P OUT B N IXDN404 / IXDI404 / IXDF404 Absolute Maximum Ratings (Note 1) Parameter Supply Voltage All Other Pins Junction Temperature Storage Temperature Value 40V -0.3V to VCC + 0.3V 150oC -65oC to 150oC 300oC Soldering Lead Temperature (10 seconds maximum) Thermal Resistance (Junction to Case) (θJC) 8 Pin SOIC (SI) 10 K/W 16 Pin SOIC (SI-16) 10 K/W Electrical Characteristics Operating Ratings Parameter Value -55 oC to 125 oC Operating Temperature Range Thermal Resistance (To Ambient) 8 Pin PDIP (PI) (θJA) 120 K/W 8 Pin SOIC (SIA) 110 K/W 110 K/W 16 Pin SOIC (SIA-16) (θJA) θJA with heat sink ** Heat sink area of 1 cm2 8 Pin SOIC 95 K/W 16 Pin SOIC-CT 95 K/W 2 Heat sink area of 3 cm 8 Pin SOIC 85 K/W 16 Pin SOIC-CT 85 K/W ** Device soldered to metal back pane. Heat sink area is 1 oz. copper on 1 side of 0.06" thick FR4 PC board. Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Symbol Parameter Test Conditions Min VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.5 VIL Low input voltage 4.5V ≤ VCC ≤ 18V VIN Input voltage range IIN Input current VOH High output voltage VOL Low output voltage ROH Output resistance @ Output High Output resistance @ Output Low Peak output current ROL IPEAK IDC 0V ≤ VIN ≤ VCC Typ Max Units V 0.8 V -5 VCC + 0.3 V -10 10 µA VCC - 0.025 V 0.025 V VCC = 18V 2 2.5 Ω VCC = 18V 1.5 2 Ω VCC = 18V 4 tR Continuous output current Rise time CL=1800pF Vcc=18V tF Fall time tONDLY A 1 A 16 18 ns CL=1800pF Vcc=18V 13 17 ns CL=1800pF Vcc=18V 36 40 ns CL=1800pF Vcc=18V 35 39 ns VCC On-time propagation delay Off-time propagation delay Power supply voltage 18 35 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = + VCC 1 0 3 10 10 mA µA µA tOFFDLY 4.5 Specifications Subject To Change Without Notice Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 3 IXDN404 / IXDI404 / IXDF404 Electrical Characteristics Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ VCC ≤ 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel. Symbol Parameter Test Conditions Min VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.4 VIL Low input voltage 4.5V ≤ VCC ≤ 18V VIN Input voltage range IIN Input current VOH High output voltage VOL Low output voltage ROH Output resistance @ Output High Output resistance @ Output Low Peak output current ROL IPEAK IDC tR Continuous output current Rise time tF tONDLY 0V ≤ VIN ≤ VCC Typ Max Units V 0.8 V -5 VCC + 0.3 V -10 10 µA VCC - 0.025 V 0.025 V VCC = 18V 3.4 Ω VCC = 18V 2 Ω VCC = 18V 3.2 A 1 A CL=1000pF Vcc=18V 11 ns Fall time CL=1000pF Vcc=18V 13 ns CL=1000pF Vcc=18V 60 ns CL=1000pF Vcc=18V 59 ns VCC On-time propagation delay Off-time propagation delay Power supply voltage 18 35 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = + VCC 1 0 3 10 10 mA µA µA tOFFDLY 4.5 Specifications Subject To Change Without Notice 4 IXDN404 / IXDI404 / IXDF404 Pin Description SYMBOL IN A FUNCTION A Channel Input GND Ground IN B B Channel Input OUT B B Channel Output VCC Supply Voltage OUT A A Channel Output DESCRIPTION A Channel Input signal-TTL or CMOS compatible. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. B Channel Input signal-TTL or CMOS compatible. B Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 35V. A Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 4 - Characteristics Test Diagram Vcc 10uF 25V 1 NC 2 In A 3 Gnd 4 NC 8 7 Out A Vcc 6 Out B 5 In B Agilent 1147A Current Probe 1800 pF 5 Agilent 1147A Current Probe 1800 pF IXDN404 / IXDI404 / IXDF404 Typical Performance Characteristics Fig. 6 Rise Times vs. Supply Voltage 80 80 70 70 60 60 Fall Times (ns) Rise Time (ns) Fig. 5 50 40 10000pF 30 6800pF Fall Times vs. Supply Voltage 50 40 10000pF 30 6800pF 20 20 4700pF 1800pF 10 4700pF 1800pF 1000pF 10 1000pF 200pF 200pF 0 0 5 10 15 20 25 30 5 35 10 15 Supply Voltage (V) Fig. 7 Output Rise Times vs. Load Capacitance 25 30 35 Output Fall Times vs. Load Capacitance Fig. 8 80 80 8V 70 8V 70 60 10V 60 12V 50 Fall Time (ns) Rise Time (ns) 20 Supply Voltage (V) 18V 40 25V 35V 30 50 12V 40 18V 25V 35V 30 20 20 10 10 0 10V 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 Load Capacitance (pF) Fig. 9 3000 4000 5000 6000 7000 8000 9000 10000 Load Capacitance (pF) Rise And Fall Times vs. Temperature C L = 1000pF, V cc = 18V Fig. 10 2.5 14 M ax / M in Input vs. Temperature C L = 1000pF, V cc = 18V 2.4 12 2.3 Max / Min Input Voltage tR 10 Time (ns) tF 8 6 4 2.2 M in Input High 2.1 2 Max Input Low 1.9 1.8 1.7 2 1.6 0 1.5 -60 -10 40 90 140 -60 190 Temperature (C) -10 40 90 Tem perature (C) 6 140 190 IXDN404 / IXDI404 / IXDF404 Fig. 11 Supply Current vs. Load Capacitance Vcc = 8V 100 Fig. 12 1000 2 MHz Supply Current vs. Frequency Vcc = 8V 90 1 MHz 70 60 50 40 500 kHz 30 10 1 0.1 20 10 0 100 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 200 pF 100 Supply Current (ma) Supply Current (mA) 80 100 kHz 50 kHz 10H kHz 1000 0.01 1 10000 10 Supply Current vs. Load Capacitance Vcc = 12V Fig. 14 1000 100 100 Supply Current (ma) Supply Current (mA) 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 1 Mhz 80 70 60 500 kHz 50 40 30 20 200 pF 10 1 0.1 100 kHz 50 kHz 10 10 kHz 1000 0.01 10000 1 10 Load Capacitance (pF) Fig. 15 Fig. 16 1000 90 2 MHz 1 MHz 1000 10000 pF 6800 pF 4700 pF 1800 pF 1000 pF 200 pF 100 Supply Current (ma) 70 60 50 40 30 20 10000 Supply Current vs. Frequency Vcc = 18V 500 kHz 80 Supply Current (mA) 100 Frequency (kHz) Supply Current vs. Load Capacitance Vcc = 18V 100 10 1 0.1 100 kHz 50 kHz 10 0 100 10000 Supply Current vs. Frequency Vcc = 12V 2 MHz 90 0 100 1000 Frequency (kHz) Load Capacitance (pF) Fig. 13 100 10 kHz 1000 0.01 1 10000 10 100 Frequency (kHz) Load Capacitance (pF) 7 1000 10000 IXDN404 / IXDI404 / IXDF404 Fig. 17 100 Supply Current vs. Frequency Vcc = 35V Fig. 18 Supply Current vs. Load Capacitance Vcc = 35V 1000 10000 pF 6800 pF 4700 pF 90 Supply Current (mA) Supply Current (mA) 1800 pF 100 80 2 MHz 70 1 MHz 60 500 kHz 50 40 100 kHz 30 20 1000 pF 200 pF 10 1 0.1 50 kHz 10 10 kHz 0 100 1000 0.01 1 10000 10 Propagation Delay vs. Supply Voltage CL = 1800pF Vin = 5V@1kHz Fig. 19 70 10000 50 45 Propagation Delay (ns) Propagation Delay (ns) 1000 Propagation Delay vs. Input Voltage CL = 1800pF Vcc = 15V Fig. 20 60 50 tONDLY 40 tOFFDLY 30 20 tONDLY 40 tOFFDLY 35 30 25 10 20 0 5 10 15 20 25 30 2 35 4 Fig. 22 Fig. 21 Propagation Delay Times vs. Temperature C L = 1000pF, Vcc = 18V 8 10 12 Q u ie s c e n t S u p p ly C u rre n t v s . T e m p e ra tu re V cc = 1 8 V , V in = 5 V @ 1 kH z , C L = 1 0 0 0 p F 0 .3 60 Quiescent Vcc input Current (mA) 55 50 45 tONDLY 40 6 Input Voltage (V) Supply Voltage (V) Time (ns) 100 Frequency (kHz) Load Capacitance (pF) tOFFDLY 35 30 0 .2 5 0 .2 0 .1 5 0 .1 0 .0 5 25 0 20 -60 -10 40 90 140 -6 0 190 Temperature (C) 8 -1 0 40 90 T e m p e ra tu re (C ) 140 190 IXDN404 / IXDI404 / IXDF404 Fig. 23 High State Ouput Resistance vs. Supply Voltage Fig. 24 Low State Output Resistance vs. Supply Voltage 6 Low State Output Resistance (Ohms) High State Output Resistance (Ohms) 6 5 4 3 2 1 0 5 4 3 2 1 0 5 10 15 20 25 30 35 5 10 Supply Voltage (V) Fig. 25 20 Fig. 26 Vcc vs. P Channel Output Current N Channel Output Current (A) -4 -6 -8 -10 -12 Vcc vs. N Channel Ouput Current 10 8 6 4 2 10 15 20 25 30 35 5 10 15 20 Vcc (V) 25 30 35 Vcc (V) P Channel Output Current vs. Temperature Vcc = 18V, CL = 1000pF Fig. 28 6 N Channel Output Current (A) P Channel Output Current (A) 35 0 5 6 30 12 -2 Fig. 27 25 Supply Voltage (V) 0 P Channel Output Current (A) 15 5 4 3 2 1 0 N Channel Output Current vs. Temperature Vcc = 18V CL = 1000pF 5 4 3 2 1 0 -80 -30 20 70 Temperature (C) 120 170 -80 -30 20 70 Temperature (C) 9 120 170 IXDN404 / IXDI404 / IXDF404 PIN CONFIGURATIONS 1 NC 2 IN A 3 GND 4 INB NC 8 1 NC OUT A 7 2 IN A VS 6 3 GND OUT B 5 4 INB 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDN404 1 NC NC 16 NC 8 1 NC OUT A 7 2 IN A VS 6 3 GND OUT B 5 4 INB 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDI404 1 NC NC 16 NC 8 OUT A 7 VS 6 OUT B 5 8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDF404 1 NC NC 16 2 IN A OUT A 15 2 IN A OUT A 15 2 IN A OUT A 15 3 NC OUT A 14 3 NC OUT A 14 3 NC OUT A 14 4 GND VCC 13 4 GND VCC 13 4 GND VCC 13 5 GND VCC 12 5 GND VCC 12 5 GND VCC 12 6 NC OUT B 11 6 NC OUT B 11 6 NC OUT B 11 7 IN B OUT B 10 7 IN B OUT B 10 7 IN B OUT B 10 8 NC NC 9 16 Pin SOIC IXDN404SI-16 8 NC NC 9 16 Pin SOIC IXDI404SI-16 8 NC NC 9 16 Pin SOIC IXDF404SI-16 Supply Bypassing, Grounding Practices And Output Lead inductance GROUNDING In order for the design to turn the load off properly, the IXDN404 must be able to drain this 2.5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN404 and its load. Path #2 is between the IXDN404 and its power supply. Path #3 is between the IXDN404 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN404. When designing a circuit to drive a high speed MOSFET utilizing the IXDN404/IXDI404/IXDF404, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, the IXDN404 is being used to charge a 2500pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF & ∆t=25ns, one can determine that to charge 2500pF to 25 volts in 25ns will take a constant current of 2.5A. (In reality, the charging current won’t be constant and will peak somewhere around 4A). OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible. If the driver must be placed farther than 2” (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin SUPPLY BYPASSING In order for the design to turn the load on properly, the IXDN404 must be able to draw this 2.5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN404 to an absolute minimum. of the driver, and connected directly to the ground terminal of the load. 10 IXDN404 / IXDI404 / IXDF404 Dimenional Outline: IXDD404PI Dimenional Outlines: IXDD404SI-CT and IXDD404SIA Dimenional Outlines: IXDD404SI-16CT and IXDD404SIA-16 IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected] IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected] 11