Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR 28 A 112 A TC = 25°C 28 A TC = 25°C 40 mJ 1.5 J 10 V/ns 400 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions 1.13/10 Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 25 1 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.20 Ω © 2003 IXYS All rights reserved TO-247 AD (IXTH) (TAB) TO-268 (D3) ( IXTT) G (TAB) S G = Gate D = Drain S = Source TAB = Drain Features z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z Space savings z High power density DS99038(04/03) IXTH 28N50Q IXTT 28N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 16 28 S 3300 pF 480 pF Crss 125 pF td(on) 17 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG 20 ns 51 ns tf 12 ns Qg(on) 94 nC 20 nC 42 nC Qgs = 2.0 Ω (External), VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.31 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr QRM K/W IF = IS, -di/dt = 100 A/µs, VR = 100 V 500 8.0 28 A 112 A 1.5 V TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline ns µC Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 28N50Q IXTT 28N50Q Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 28 70 VG S = 10V 7V 21 50 6V I D - Amperes I D - Amperes VG S = 10V 8V 60 14 7 5V 7V 40 30 6V 20 10 0 5V 0 0 1 2 3 4 V DS - Volts 5 6 7 0 5 Fig. 3. Output Characteristics 15 20 25 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 28 3.1 VG S = 10V 7V 2.8 RD S (on) - Normalized 6V 21 I D - Amperes 10 V D S - Volts 14 5V 7 VG S = 10V 2.5 2.2 1.9 I D = 28A 1.6 1.3 I D = 14A 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 3.4 30 VG S = 10V 3 25 2.6 I D - Amperes RD S (on) - Normalized -25 T J = 125º C 2.2 1.8 1.4 T J = 25º C 20 15 10 5 1 0 0.6 0 14 28 42 I D - Amperes © 2003 IXYS All rights reserved 56 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 28N50Q IXTT 28N50Q Fig. 8. Transconductance Fig. 7. Input Admittance 60 56 49 T J = -40º C 50 25º C g f s - Siemens I D - Amperes 42 35 28 T J = -40º C 21 25º C 125º C 14 125º C 40 30 20 10 7 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 14 28 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain 84 70 84 10 70 VD S = 250V I D = 14A I G = 10mA 8 56 VG S - Volts I S - Amperes 56 Fig. 10. Gate Charge Voltage 42 T J = 125º C 28 14 6 4 2 T J = 25º C 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 60 80 100 QG - nanoCoulombs V SD - Volts Fig. 12. Maximum Transient Thermal Fig. 11. Capacitance Resistance 1 10000 f = 1M Hz C iss 1000 R(th) J C - (ºC/W) Capacitance - p F 42 I D - Amperes C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343