High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS(on) Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C; TJ = 25°C to 150°C 100 mA IDM TC = 25°C, pulse width limited by max. TJ 400 mA PD TC = 25°C 25 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 0.8 g TJ TL TO-251 AA G 1.6 mm (0.063 in) from case for 5 s Weight D D (TAB) S TO-252 AA G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features Symbol VDSS Test Conditions V GS = 0 V, ID = 25 µA VGS(th) V DS = VGS, ID = 25 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 TJ = 25°C TJ = 125°C V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved V V l International standard packages JEDEC TO-251 AA, TO-252 AA l Low RDS (on) HDMOSTM process l l Rugged polysilicon gate cell structure Fast switching times 4.5 V ±50 nA Applications 10 200 µA µA l 50 Ω l l l Level shifting Triggers Solid state relays Current regulators 98841 (5/01) IXTU 01N80 IXTY 01N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test Ciss mS 60 pF 8.0 pF Crss 2.0 pF td(on) 12 ns Coss V GS = 0 V, VDS = 25 V, f = 1 MHz 140 TO-251 AA Outline 1. 2. 3. 4. Gate Drain Source Drain Back heatsink tr V GS = 10 V, VDS = 500 V, ID = ID25 12 ns td(off) RG = 50 Ω (External) 28 ns 28 ns Dim. Millimeter Min. Max. Inches Min. Max. 8 nC A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 1.8 nC 3 nC b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 L3 8.89 1.91 0.89 1.15 9.65 2.28 1.27 1.52 .350 .075 .035 .045 .380 .090 .050 .060 tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 3 RthJC Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VSD IF = 100 mA, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 0.75 A, -di/dt = 10 A/µs, VDS = 25 V 1.5 µs TO-252 AA 1 Anode 2 NC 3 Anode 4 Cathode Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025