Vishay J/SST111 N-channel jfet Datasheet

J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111
SST111
J112
SST112
J113
SST113
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
J/SST111
–3 to –10
30
5
4
J/SST112
–1 to –5
50
5
4
J/SST113
v–3
100
5
4
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low On-Resistance: 111 < 30 W
Fast Switching—tON: 4 ns
Low Leakage: 5 pA
Low Capacitance: 3 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
D
1
S
2
TO-236 (SOT-23)
D
1
3
G
S
G
2
3
Top View
Top View
J111
J112
J113
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = –1 mA , VDS = 0 V
–55
–35
VGS(off)
VDS = 5 V, ID = 1 mA
–3
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
20
Gate Reverse Current
IGSS
Parameter
Max
J/SST112
Min
Max
J/SST113
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Drain Cutoff Current
–35
V
VGS = –15 V, VDS = 0 V
Gate Operating Current
–35
IG
ID(off)
–0.005
VDG = 15 V, ID = 10 mA
–5
VDS = 5 V, VGS = –10 V
0.005
TA = 125_C
rDS(on)
VGS = 0 V, VDS = 0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
–1
–5
5
–1
–3
2
–1
mA
–1
nA
–3
TA = 125_C
Drain-Source On-Resistance
–10
pA
1
1
1
nA
3
30
50
100
W
0.7
V
6
mS
25
mS
Dynamic
Common-Source Forward
Transconductance
gfs
Common-Source
Output Conductance
gos
Drain-Source On-Resistance
rds(on)
Common-Source
Input Capacitance
Ciss
Common-Source Reverse Transfer
Capacitance
Crss
Equivalent Input
Noise Voltage
en
VDS = 20 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = -10 V
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
30
50
100
7
12
12
12
3
5
5
5
W
pF
3
nV⁄
√Hz
Switching
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
2
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
7-2
2
ns
6
15
NCB
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
80
160
IDSS
rDS
60
120
40
80
20
40
0
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
–4
–6
–8
TA = 25° C
80
VGS(off) = –2 V
60
40
–4 V
–8 V
20
0
0
–2
0
On-Resistance vs. Drain Current
100
200
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
100
–10
1
10
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Turn-On Switching
On-Resistance vs. Temperature
5
tr approximately independent of ID
VDD = 5 V, RG = 50 Ω
VGS(L) = –10 V
ID = 1 mA
rDS changes X 0.7%/_C
160
4
tr
120
Switching Time (ns)
rDS(on) – Drain-Source On-Resistance ( Ω )
200
VGS(off) = –2 V
80
–4 V
–8 V
40
3
td(on) @
ID = 12 mA
2
td(on) @
ID = 3 mA
1
0
0
–55 –35
5
–15
25
45
65
85
105
0
125
TA – Temperature ( _C)
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
Turn-Off Switching
30
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
f = 1 MHz
24
18
Capacitance (pF)
24
Switching Time (ns)
100
tf @
VGS(off) = –2 V
12
18
12
td(off)
Ciss @ VDS = 0 V
6
6
tf @
VGS(off) = –8 V
Crss @ VDS = 0 V
0
0
0
2
4
6
ID – Drain Current (mA)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
8
10
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
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7-3
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Noise Voltage vs. Frequency
100
50
gfs – Forward Transconductance (mS)
Hz
en – Noise Voltage nV /
ID = 1 mA
ID = 10 mA
1
40
gfs
30
250
20
10
0
10
100
1k
10 k
0
0
100 k
f – Frequency (Hz)
1 mA
–10
gig
10 mA
big
(mS)
1 mA
IGSS @ 25_C
1
TA = 25_C
I
G
–8
10
100 pA
10 pA
–6
VDG = 10 V
ID = 10 mA
TA = 25_C
ID = 10 mA
TA = 125_C
–4
Common-Gate Input Admittance
100
IGSS @ 125_C
1 nA
–2
VGS(off) – Gate-Source Cutoff Voltage (V)
Gate Leakage Current
10 nA
– Gate Leakage
gos
1 pA
0.1 pA
0.1
0
6
12
18
30
24
100
200
500
1000
f – Frequency (MHz)
VDG – Drain-Gate Voltage (V)
Common-Gate Forward Admittance
Common-Gate Reverse Admittance
100
10
VDG = 10 V
ID = 10 mA
TA = 25_C
VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg
bfg
–brg
1.0
10
(mS)
(mS)
gfg
+grg
–grg
0.1
1
0.01
0.1
100
200
500
f – Frequency (MHz)
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7-4
1000
100
200
500
1000
f – Frequency (MHz)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
g os – Output Conductance (mS)
10
500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
VDS = 10 V
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
Output Characteristics
100
100
VDG = 10 V
ID = 10 mA
TA = 25_C
VGS(off) = –4 V
80
ID – Drain Current (mA)
bog
(mS)
10
gog
1
VGS = 0 V
60
–0.5
40
–1.0
–1.5
20
–2.0
–2.5
0.1
0
100
200
500
1000
0
2
4
10
8
VDS – Drain-Source Voltage (V)
f – Frequency (MHz)
Output Characteristics
Transfer Characteristics
40
100
VGS(off) = –4 V
VGS(off) = –4 V
VDS = 20 V
80
VGS = 0 V
–0.5
24
–1.0
16
–1.5
–2.0
8
ID – Drain Current (mA)
32
ID – Drain Current (mA)
6
TA = –55_C
60
25_C
40
20
–2.5
125_C
–3.0
0
0
0
0.2
0.4
0.6
1.0
0.8
0
–1
VDS – Drain-Source Voltage (V)
–2
–3
VGS – Gate-Source Voltage (V)
VDD
SWITCHING TIME TEST CIRCUIT
J/SST111
J/SST112
J/SST113
VGS(L)
–12 V
–7 V
–5 V
RL*
800 W
1600 W
3200 W
ID(on)
12 mA
6 mA
3 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
–5
–4
RL
OUT
VGS(H)
VGS(L)
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
1 kW
51 W
VGS
Scope
51 W
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7-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1