Microsemi JAN1N4153 Silicon switching diode do-35 glass package Datasheet

1N4153,
Silicon Switching Diode 1N4150
Applications
DO-35 Glass Package
1N4153-1
Used in general purpose applications,where a low current controlled forward
characteristic and fast switching speed are important.
DO-35 Glass Package
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bondâ„¢ plating
1.0"
for problem free solderability
25.4 mm
(Min.)
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/337
Available up to JANTXV-1 levels
"S" level screening available to SCDs
Maximum Ratings
Peak Inverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 Sec.)
BKC Power Dissipation TL = 50 oC, L = 3/8" from body
L
ea dDi
a.
0 .0 18-0 .0 22"
0 .458-0 .558m m
Length
Dia.
0.120-.200"
3.05-5.08- m
0.06-0.09"
Symbol
PIV
IAvg
IFdc
Ipeak
Ptot
Operating and Storage Temperature Range
Symbol
Forward Voltage
@ IF = 100 µA VF
Vf
Vf
Forward Voltage
@ IF = 250 µA VF
Forward Voltage
@ IF = 1.0 mA VF
Vf
Forward Voltage
@ IF = 2.0 mA VF
Vf
VF
Forward Voltage
@ IF = 10 mA
Forward Voltage
@ IF = 20 mA
VF
Reverse Leakage Current @ VR = 50 V
IR
PIV
Breakdown Voltage @ IR = 5.0 µA
1.53-2.28m m
Value
75 (Min.)
150
300
0.25
500
TOp & St
Electrical Characteristics @ 25 oC*
m
Minimum
0.49
0.53
0.59
0.62
0.70
0.74
Unit
Volts
mAmps
mAmps
Amp
mWatts
-65 to +200
o
Maximum
0.55
0.59
0.67
0.70
0.81
0.88
Unit
Volts
Volts
Volts
Volts
Volts
Volts
µA
Volts
0.05(50 @ 150 oC)
75
C
Capacitance @ VR = 0 V, f = 1mHz
CT
2.0
pF
Reverse Recovery Time (note 1)
Reverse Recovery Time (note 2)
trr
trr
4.0
2.0
nSecs
nSec
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified
Note2: Per Method 4031-A with IF = IR = 10 mA, Rr = 6 Volts, Rl=100 ohms.
6 Lake Street - Lawrence, MA 01841
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