Microsemi JAN1N4454UR-1 Mini-melf-smd silicon swithching diode Datasheet

MINI-MELF-SMD
Applications
1N4454UR-1
Used in general purpose applications,
where performance, space and
switching speed are important.
Silicon Switching Diode
LL-34/35 MINI MELF
Surface Mount Package DO-213AA
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bondâ„¢ plating
for problem free solderability
Also comes in DO-35 glass package
Full UR approval to Mil-S-19500 /144
Available up to JANTXV levels
"S" level screening available to Source Control Drawings
0.10"REF
2.54 mmREF
Both End Caps
0.016-.022"
0.41-0.55 mm
Length
Dia.
0.13-0.146"
3.30-3.70 mm
Maximum Ratings
.063-.067"
1.6-1.7mm
Symbol
Value
Unit
PIV
75 (Min.)
Volts
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
Average Rectified Current
IAvg
200
mAmps
Continuous Forward Current
IFdc
300
mAmps
Peak Surge Current (tpeak = 1 sec.)
Ipeak
1.0
Amp
Ptot
500
mWatts
Power Dissipation TL= 50 oC, L = 3/8" from body
Operating Temperature Range
TOp
200
o
C
Storage Temperature Range
TSt
-65 to +200
o
C
Electrical Characteristics @ 25 oC*
Symbol
Limits
Unit
Forward Voltage @ IF= 10 mA
VF
1.0(max)
Volts
Breakdown Voltage @ IR = 10 mA
PIV
75 (min)
Volts
Reverse Leakage Current @ VR = 50 V
IR
0.1 (max)
µA
Reverse Leakage Current @ VR = 50 V, T=150 o C
IR
100 (max)
µA
Capacitance @ VR = 0 V, f = 1mHz
CT
2.0 (max)
pF
Reverse Recovery Time (note 1)/(note 2)
trr
2.0/4.0 (max)
nSecs
Forward Recovery Voltage (note 3)
Vfr
3.0 (max)
Volts
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf.
Note 2: Per Method 4031-A with IF = 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
Note 3: Per Method 4026 with IF = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repetition Rate = 5 - 100 KHz. *Unless Otherwise Specified
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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