IRF JANSH2N7467U2 Radiation hardened power mosfet Datasheet

PD - 91787H
IRHNA57Z60
JANSR2N7467U2
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/683
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHNA57Z60 100K Rads (Si)
IRHNA53Z60 300K Rads (Si)
RDS(on)
ID
0.0035Ω 75A*
0.0035Ω 75A*
QPL Part Number
JANSR2N7467U2
JANSF2N7467U2
IRHNA54Z60
0.0035Ω 75A*
JANSG2N7467U2
500K Rads (Si)
IRHNA58Z60 1000K Rads (Si) 0.0040Ω
75A*
JANSH2N7467U2
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
75*
75*
300
250
2.0
±20
500
75
25
0.83
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
3.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
04/24/06
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
30
—
—
V
—
0.026
—
V/°C
—
—
0.0035
Ω
2.0
45
—
—
—
—
—
—
4.0
—
10
25
V
S( )
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
200
55
40
35
125
80
50
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
9110
4620
150
—
—
—
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, I D = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 75A
Ã
Ω
Parameter
BVDSS
VDS = VGS, ID = 1.0mA
VDS ≥ 15V, IDS = 45A Ã
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, I D = 45A
VDS = 15V
VDD = 15V, ID = 45A,
VGS =12V, RG = 2.35Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
75*
300
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.3
165
690
V
ns
nC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 75A, VGS = 0V Ã
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.5
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA57Z60, JANSR2N7467U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-2)
Diode Forward Voltage Ã
30
2.0
—
—
—
—
—
4.0
100
-100
10
0.004
30
1.5
—
—
—
—
—
4.0
100
-100
25
0.0045
µA
Ω
VGS = 0V, I D = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS =24V, VGS =0V
VGS = 12V, ID =45A
—
0.0035
—
0.004
Ω
VGS = 12V, ID =45A
—
1.3
V
VGS = 0V, IS = 45A
—
1.3
V
nA
1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2)
2. Part number IRHNA58Z60 (JANSH2N7467U2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Energy
(MeV)
261
285
344
VDS
Cu
Br
I
LET
(MeV/(mg/cm2))
28
37
60
VDS (V)
Range
(µm) @V GS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V
40
30
30
30
25
15
37
30
30
30
23
15
33
25
25
20
15
8
35
30
25
20
15
10
5
0
Cu
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57Z60, JANSR2N7467U2
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
5.0V
100
5.0V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 15
50V
25V
20µs PULSE WIDTH
6.0
6.5
7.0
7.5
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.5
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
VDS , Drain-to-Source Voltage (V)
10
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
8.0
45AA
ID = 75
1.5
1.0
0.5
0.0
-60 -40 -20
VGS =12V
10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
20000
IRHNA57Z60, JANSR2N7467U2
15000
Coss
Ciss
10000
5000
ID = 45 A
VDS = 24V
VDS = 15V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
25
VDS , Drain-to-Source Voltage (V)
75
100 125 150 175 200 225
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 25 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
50
QG , Total Gate Charge (nC)
TJ = 150 ° C
100
100µs
100
10
1
0.1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1ms
10ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
3.5
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
250
RD
VDS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
200
D.U.T.
RG
150
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
100
Fig 10a. Switching Time Test Circuit
VDS
50
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
15V
L
VDS
D.U.T.
RG
IAS
VGS
20V
TOP
1000
DRIVER
+
- VDD
0.01Ω
tp
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
A
BOTTOM
800
600
400
200
0
25
V(BR)DSS
ID
34A
47A
75A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.3mH
Peak IL = 75A, VGS = 12V
 ISD ≤ 75A, di/dt ≤ 94A/µs,
VDD ≤ 30V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
24 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
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Data and specifications subject to change without notice. 04/2006
8
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