Microsemi JANTX2N3771 Npn high power silicon transistor Datasheet

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
Qualified Level
2N3771
JANTX
JANTXV
2N3772
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
Symbol
2N3771
2N3772
Unit
VCEO
VCBO
VEBO
IB
IC
40
50
7.0
7.5
30
60
100
7.0
5.0
20
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
PT
TJ, Tstg
6.0
150
-65 to +200
TO-3*
(TO-204AA)
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 857 mW/0C for TC > +250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3771
2N3772
V(BR)CEO
40
60
Vdc
2N3771
2N3772
V(BR)CER
45
70
Vdc
2N3771
2N3772
V(BR)CEX
50
90
Vdc
2N3771
2N3772
ICEO
5.0
5.0
mAdc
2N3771
2N3772
IEBO
2.0
mAdc
2N3771
2N3772
ICEX
500
500
µAdc
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100 Ω
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VBE = -1.5 Vdc
Collector-Emitter Cutoff Current
VCE = 30 Vdc
VCE = 50 Vdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 50 Vdc
VBE = 1.5 Vdc, VCE = 100 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3771, 2N3772 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
15
15
40
60
60
-
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
IC = 1.0 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.5 Adc
IC = 30 Adc, IB = 6.0 Adc
IC = 10 Adc, IB = 1.0 Adc
IC = 20 Adc, IB = 4.0 Adc
Base-Emitter Voltage (non-saturated)
IC = 15 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
hFE
2N3771
2N3772
Both
VCE(sat)
1.5
4.0
1.2
4.0
2N3771
2N3771
2N3772
2N3772
Vdc
VBE
2.3
2.0
2N3771
2N3772
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Cutoff Frequency
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer
IC = 1.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
hfe
40
6.0
30
1200
pƒ
on
10
8.0
µs
off
12
10
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 15 Adc; IB1= 1.5 Adc
VCC = 30 Vdc; IC = 10 Adc; IB1= 1.0 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 15 Adc; IB1 =1.5 Adc; IB2 = -1.5 Adc
VCC = 30 Vdc; IC = 10 Adc; IB1 = 1.0 Adc; IB2 = -1.0 Adc
2N3771
2N3772
t
2N3771
2N3772
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1 (2N3771 only)
VCE = 5.0 Vdc, IC = 30 Adc
Test 2 (2N3771 only)
VCE = 40 Vdc, IC = 3.75 Adc
Test 3 (2N3772 only)
VCE = 7.5 Vdc, IC = 20 Adc
Test 4 (2N3772 only)
VCE = 60 Vdc, IC = 2.5 Adc
Clamped Inductive
TA = +250C; duty cycle ≤ 10%; RS = 0.1 Ω
Test 1 (2N3771 only)
RBB1 = 2.0 Ω; VBB1 ≤ 14 Vdc; RBB2 = 100 Ω; VCC = 20±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 30 Adc; RL ≤ 0.67 Ω; L= 5.0 mH
Test 2 (2N3772 only)
RBB1 = 2.0 Ω; VBB1 ≤ 10 Vdc; RBB2 = 100 Ω; VCC = 40±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 20 Adc; RL ≤ 2.0 Ω; L= 5.0 mH
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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