PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. T0-39 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units 2.0 1.25 10 20 0.16 ±20 0.242 2.2 2.0 4.0 -55 to 150 A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page www.irf.com 1 08/07/07 IRFF320, JANTX2N6792, JANTXV2N6792 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) g fs IDSS IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Parameter Min Drain-to-Source Breakdown Voltage 400 — — V — 0.37 — V/°C — — 2.0 1.0 — — — — — — — — 1.8 1.9 4.0 — 25 250 — — 8.7 0.8 4.2 — — — — — — — — — — — — — — 7.0 100 -100 22 3.0 14 40 35 60 35 — Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Ω V S µA nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 1.25A VGS = 10V, ID = 2.0A VDS = VGS, ID = 250µA V DS > 15V, IDS = 1.25A VDS = 320V, VGS = 0V VDS = 320V VGS = 0V, TJ = 125°C VGS = 20V V GS = -20V VGS = 10V, ID = 2.0A VDS = 200V VDD = 175V, ID = 2.0A VGS = 10V, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 350 100 45 — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 2.0 10 1.4 650 5.0 Test Conditions A V ns µC Tj = 25°C, IS = 2.0A, VGS = 0V Tj = 25°C, IF = 2.0A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 6.25 175 Units °C/W Test Conditions Typical socket mount. Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFF320, JANTX2N6792, JANTXV2N6792 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs.Temperature 3 IRFF320, JANTX2N6792, JANTXV2N6792 13 aa& & bbbb 13 a& 13 b 13 13 a& a& Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFF320, JANTX2N6792, JANTXV2N6792 RD V DS V GS RG D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. CaseTemperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFF320, JANTX2N6792, JANTXV2N6792 15V 2.0A L VDS D.U.T RG 20V VGS IAS DRIVER + - VDD A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .2µF .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFF320, JANTX2N6792, JANTXV2N6792 Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25°C, Peak IL = 2.2A, L = 100µH ISD ≤ 2.0A, di/dt ≤ 65A/µs, VDD≤ 400V, TJ ≤ 150°C Suggested RG = 7.5 Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — TO-205AF(Modified TO-39) LEGEND 1- SOURCE LEGEND 2- GATE 1- SOURCE 3- DRAIN 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2007 www.irf.com 7