INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 April 2002. MIL-PRF-19500/558D 14 January 2002 SUPERSEDING MIL-PRF-19500/558C 31 August 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FOUR TRANSISTOR ARRAY,UNITIZED, PNP, SILICON, SWITCHING TYPES 2N6987, 2N6987U, AND 2N6988, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors, four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions . See figures 1, 2, 3, and 4 (14-pin dual-in-line, 14-pin flat-pack, and 20-pin leadless chip carrier) and 3.4. 1.3 Maximum ratings. (1) 2N6987 2N6987U 2N6988 * PT TA = +25°C (2) VCBO (3) VEBO (3) VCEO (3) IC (3) TOP and TSTG W V dc V dc V dc mA dc °C 1.5 1.0 0.4 60 60 60 5 5 5 60 60 60 600 600 600 -65 to +200 -65 to +200 -65 to +200 (1) Maximum voltage between transistors shall be ≥ 500 V dc. (2) Derate linearly 8.57 mW/°C above TA = +25°C for 2N6987 and 5.71 mW/°C for 2N6987U. Derate linearly 2.286 mW/°C above TA = +25°C for 2N6988. Ratings apply to total package. (3) Ratings apply to each transistor in the array. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P. O. Box 3990, Columbus, OH 43216- 5000, by using Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of the document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/558D FIGURE 1. Dimensions and configuration for type 2N6987. 2 MIL-PRF-19500/558D Symbol Inches Min Max Millimeters Min Max .200 5.08 BH Notes LW .014 .023 0.36 0.58 8 LW1 .030 .070 0.76 1.78 4, 8 LT .008 .015 0.20 0.38 8 19.94 4 BL .785 BW .220 .310 5.59 7.87 4 BW1 .290 .320 7.37 8.13 7 LS .100 BSC LL .125 LL1 .150 LO2 .015 LO1 2.54 BSC .200 3.18 .005 α 0° 5.08 3.81 .060 0.38 .098 LO 5, 9 1.52 3 2.49 6 0.13 15° 0° 6 15° NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for information only. 3. Index area; a notch or pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 4. The minimum limit for dimension LW1 may be .023 inch (0.58 mm) for lead numbers 1, 7, 8, and 14 only. 5. Dimension LO2 shall be measured from the seating plane to the base plane. 6. This dimension allows for off-center lid, meniscus, and glass overrun. 7. The basic pin spacing i s .100 inch (2.54 mm) between centerlines. Each pin centerline shall be located within ±.010 inch (± 0.25 mm) of its exact longitudinal position relative to pins 1 and 14. 8. Applies to all four corners (lead numbers 1, 7, 8, and 14). 9. Lead center when α is 0 . BW1 shall be measured at the centerline of the leads. 10. All leads: Increase maximum limit by .003 inch (0.08 mm) measured at the center of the flat, when lead finish A is applied. Pointed or round lead ends are allowed. 11. Twelve spaces. 12. No organic or polymeric materials shall be molded to the bottom of the package to cover leads. 13. For terminal connections see figure 4. FIGURE 1. Dimensions and configuration for type 2N6987 - Continued. 3 MIL-PRF-19500/558D FIGURE 2. Physical dimensions for type 2N6988. 4 MIL-PRF-19500/558D Symbol Dimensions Millimeters Min Max Min Max .030 .115 0.76 2.92 .010 .019 0.25 0.48 .003 .006 0.08 0.15 .280 7.11 .240 .260 6.10 6.60 .290 7.37 .125 3.18 .030 0.76 050 BSC 1.27 BSC .008 .015 0.20 0.38 .250 .370 6.35 9.40 .005 .040 0.13 1.02 .005 0.13 .004 0.10 30° 30° 90° 90° Notes Inches A b C D E E1 E2 E3 e k L Q S1 S2 α 7 7 5 5 6, 8 12 4 9, 10 13 14 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Index area; a notch or pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. Alternatively, a tab (dim k) may be used to identify pin one. 4. Dimension Q shall be measured at the point of exit of the lead from the body. 5. This dimension allows for off-center lid, meniscus and glass overrun. 6. The basic pin spacing is .050 inch (1.25 mm) between centerlines. Each pin centerline shall be located within ± .005 inch (±0.013 mm) of its exact longitudinal position relative to pins 1 and 14. 7. All leads - increase maximum limit by .003 inch (0.08 mm) measured at the center of the flat when the lead finish is solder. 8. Twelve spaces. 9. Applies to all four corners (leads number 2, 6, 9, and 13). 10. Dimension S 1 may be .000 inch (0.00 mm) if leads number 2, 6, 9, and 13 bend toward the cavity of the package within one lead width from the point of entry of the lead into the body or if the leads are brazed to the metallized ceramic body. 11. No organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 12. Optional, see note 1. If a pin one identification mark is used in addition to this tab, the minimum limit of dimension k does not apply. 13. Applies to leads number 1, 7, 8, and 14. 14. Lead configuration is optional within dimension E, except dimensions b and C apply. FIGURE 2. Physical dimensions for type 2N6988 - Continued. 5 MIL-PRF-19500/558D Symbol Dimensions Inches Millimeters Min Max Min Max A .063 .075 1.60 1.90 D .345 .355 8.76 9.02 D1 .195 .205 4.95 5.21 D2 D3 .050 TYP .070 1.27 TYP .080 1.76 E .025 REF 0.64 REF L1 .050 REF 1.27 REF 2.03 L2 .080 .090 2.03 2.28 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm). 4. For terminal connections see figure 4. FIGURE 3. Physical dimensions for type 2N6987U. 6 MIL-PRF-19500/558D 14-lead flat-package or dual-in-line (top view) 20 pin leadless chip carrier (top view). FIGURE 4. Schematic and terminal connections . 7 MIL-PRF-19500/558D 1.4 Primary electrical characteristics. Characteristics apply to each transistor in the array. Limits Min Max Limits hFE4 (1) Cobo VCE = 10 V dc IC = 1.0 mA dc VCE = 10 V dc IC = 150 mA dc VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz pF 100 450 hfe VCE = 20 V dc IC = 50 mA dc f = 100 MHz Min Max Switching hFE2 (1) 2.0 8.0 100 300 ton see figure 5 8 VCE(sat)2 (1) toff see figure 6 ns ns 45 300 VBE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc IC = 500 mA dc IB = 50 mA dc V dc V dc 1.6 2.6 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 8 MIL-PRF-19500/558D 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks . The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1. General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2. Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML) before contract award (see 4.2 and 6.3). 3.3. Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions . The interface requirements and physical dimensions shall be as specified in MIL -PRF-19500 and on figures 1 (MO-036AB), 2, 3 and 4 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL -STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Schematic and terminal connections . The schematic and terminal connections shall be as shown on figure 4. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise s pecified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 9 MIL-PRF-19500/558D 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8. Workmans hip. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections . The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. * 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 appendix E, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table IV of MIL-PRF-19500) Measurements JANS level JANTX & JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, meth od 3131 of MIL-STD-750. 9 ICBO2 and h FE4 Not applicable 10 24 hours minimum 24 hours minimum Maximum leak rate = 1 x 10-7 atm cc/s Test condition C Maximum leak rate = 1 x 10-7 atm cc/s Test condition C 11 ICBO2 and h FE4 ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE4 = ±15 percent of initial value. ICBO2 and h FE4 12 See 4.3.1, 240 hours minimum See 4.3.1, 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE4 = ±15 percent of initial value. Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE4 = ±15 percent of initial value. 7(a) or 14(a) 10 MIL-PRF-19500/558D 4.3.1 Power burn-in conditions . Power burn-in conditions are as follows: TA = Room ambient as defined in the general requirements of MIL-STD-750, (see 4.5); VCB = 10 - 30 V dc; PT = 1.5 W for 2N6987; PT = 1.0 W for 2N6987U, and PT = 0.4 W for 2N6988. NOTE: No heat sink or forced air cooling on the devices shall be permitted. Power ratings apply to total package. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL -PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and group A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2 herein). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (endpoints) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.5 herein, delta parameters apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.5 herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 - 30 V dc; (see 4.5), 2,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 V dc, PD ≥ 100 percent of max rated PT (see 1.3). Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table Via, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. 11 MIL-PRF-19500/558D 4.4.2.2 Group B inspection (JAN, JANTX, and JANTXV). 1/ Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, TJ = +150°C minimum. No heat sink or forced- air cooling on devices shall be permitted. n = 45, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.5 herein delta parameters apply to subgroup C6. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup 1/ Method Condition C2 2036 Test condition E, not applicable for U designation. C6 1026 1,000 hours at VCB = 10 -30 V dc; TJ = +150°C minimum. No heat sink or forced-air cooling on device shall be permitted. Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 12 MIL-PRF-19500/558D 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method C2 2036 C6 Condition Test condition E, not applicable for U designation. Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Te sting of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or requalification only. The tests specified in table II herein must be performed to maintain qualification. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements . Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor shall be omitted. 4.5.3 Independent transistor inspections . Inspections shall be performed on each transistor in the array. 4.5.4 Transistor-to-transistor resistance. The leads of each transistor shall be shorted together for this test. The resistance shall be measured between each transistor in the array. * 4.5.5 Delta requirements . Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method Conditions Symbol Limit 1 Collector-base cutoff current 3036 Bias condition D, VCB = 50 V dc ∆ICB02 (1) 100 percent of initial value or ± 8 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 V CE = 10 V dc; IC = 150 mA dc; pulsed see 4.5.1 ∆hFE4 ±25 percent change from initial reading. (1) (1) Devices which exceed the group A limits for this test shall not be accepted. 13 Unit MIL-PRF-19500/558D TABLE I. Group A inspection. * Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = + 250°C at t = 24 hours or TA = + 300°C at t = 2 hours. n = 11 wires, c = 0 Collector to base, cutoff current 3036 VCB = 60 V dc ICBO1 10 µA dc Emitter to base, cutoff current 3061 VBE = 5 V dc IEBO1 10 µA dc Breakdown voltage collector to emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO2 10 nA dc 3061 Bias condition D; VEB = 4 V dc IEBO2 50 nA dc Subgroup 2 60 V dc Emitter to base cutoff current See footnotes at end of table. 14 MIL-PRF-19500/558D TABLE I. Group A inspection - Continued. * Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 0.1 mA dc hFE1 75 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE2 100 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc hFE3 100 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc pulsed (see 4.5.1) hFE4 100 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 500 mA dc pulsed (see 4.5.1) hFE5 50 Collector to emitter voltage (saturated) 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.4 V dc Collector to emitter voltage (saturated) 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(sat)2 1.6 V dc Base to emitter saturated voltage 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(sat)1 1.3 V dc Base to emitter saturated voltage 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VBE(sat)2 2.6 V dc ICBO3 10 µA dc 450 300 Subgroup 3 High temperature operation: Collector to base cutoff current Low temperature operation: TA = +150°C 3036 Bias condition D; VCB = 50 V dc TA = -55°C See footnotes at end of table. 15 MIL-PRF-19500/558D TABLE I. Group A inspection - Continued. * Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 3 – Continued Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE6 50 Subgroup 4 Small-signal short-circuit forwardcurrent transfer ratio 3206 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hfe 100 Magnitude of smallsignal short-circuit forward- current transfer ratio 3306 VCE = 20 V dc; IC = 20 mA dc; f = 100 MHz |hfe| 2.0 Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 8.0 pF Input capacitance (output open-circuited) 3240 VEB = 2.0 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz; See 4.5.2 Cibo 30 pF Turn-on time See figure 5 ton 45 ns Turn-off time See figure 6 toff 300 ns |VT-T | = 500 V dc; see 4.5.4 RT-T Transistor-to-transistor resistance Subgroups 5 and 6 Not applicable See footnotes at end of table. 16 10 10 ohms MIL-PRF-19500/558D TABLE I. Group A inspection - Continued. * Inspection 1/ MIL-STD-750 Method Conditions Symbol Limit Min Unit Max Subgroups 7 Decap internal visual (design verification) 2075 n = 1 device, c = 0 1/ For sampling plan see MIL -PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 17 MIL-PRF-19500/558D * TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 and 4.5.5 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements Intermittent operation life: VCB = 10 - 30 V dc , 6,000 cycles. See group A, subgroup 2 and 4.5.5 herein. Subgroup 3, 4, 5, 6 and 7 Not applicable Subgroup 8 Reverse stability 45 devices 1033 Condition A for devices ≥ 400 V. Condition B for devices < 400 V. 18 c=0 MIL-PRF-19500/558D NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 2.0 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 Ω. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; C in ≤ 12 pF; rise time ≤ 5.0 ns. FIGURE 5. Saturated turn-on switching time test circuit and waveform. NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 2.0 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 Ω. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; C in ≤ 12 pF; rise time ≤ 5.0 ns. FIGURE 6. Saturated turn-off switching time test circuit and waveform. 19 MIL-PRF-19500/558D 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements . Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where changes from the previous amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment. 20 MIL-PRF-19500/558D Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2498) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 71, 99 21 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 19500/429 1. DOCUMENT NUMBER MIL-PRF-19500/558D 2. DOCUMENT DATE 14 January 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FOUR TRANSISTOR ARRAY,UNITIZED, PNP, SILICON, SWITCHING TYPES 2N6987, 2N6987U, AND 2N6988, JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC, P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99