IRF JANTX2N7236U Power mosfet surface mount (smd-1) Datasheet

PD - 91553F
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
REF:MIL-PRF-19500/595
100V, P-CHANNEL
®
Part Number
RDS(on)
ID
IRFN9140
0.20Ω
-18A
HEXFET MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Surface Mount
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
-18
-11
-72
125
1.0
±20
500
-18
12.5
-5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 S)
2.6(typical)
g
For footnotes refer to the last page
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1
09/22/03
IRFN9140
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
—
-0.087
—
V/°C
—
—
-2.0
6.2
—
—
—
—
—
—
—
—
0.20
0.22
-4.0
—
-25
-250
Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
60
13
35.2
35
85
85
65
—
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1400
600
200
—
—
V
S( )
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -11A➃
VGS = -10V, ID = -18A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -11A➃
VDS= -80V, VGS= 0V
VDS = -80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID= -18A
VDS = -50V
VDD = -50V, ID = -18A
RG = 9.1Ω, VGS = -10V
Measured from the center of
drain pad to center of source
pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
-18
-72
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.0
280
3.6
V
nS
µc
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -18A, VGS = 0V ➃
Tj = 25°C, IF = -18A, di/dt ≤-100A/µs
VDD ≤ -30V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max
—
—
—
4.0
1.0
—
Units
°C/W
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFN9140
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFN9140
13a & b
4
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFN9140
V DS
VGS
RD
D.U.T.
RG
-
+
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
td(on)
tr
t d(off)
tf
VGS
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFN9140
L
VDS
D .U .T
RG
V0GS
-2
V
VD D
A
IA S
D R IV E R
0 .0 1 Ω
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFN9140
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
➂ ISD ≤ -18A, di/dt ≤ −100A/µs,
maximum junction temperature.
➁ VDD =-25V, starting TJ = 25°C, L = 3.1mH
Peak IL = -18A, VGS = -10V
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1- DRAIN
2- GATE
3- SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/03
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