The documentation and process conversion measures necessary to comply with this document shall be completed by 20 May 2002. INCH-POUND MIL-PRF-19500/399D 20 February 2002 SUPERSEDING MIL-PRF-19500/399C 29 May 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960 AND 2N3960UB JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated chips as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. PT (1) TA = +25°C VCBO VCEO VEBO TJ and TSTG mW V dc V dc V dc °C 400 20 12 4.5 -65 to +200 (1) Derate linearly 2.3 mW/°C above TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/399D 1.4 Primary electrical characteristics. Limits hFE VCE(sat) VCE = 1.0 V dc VCE = 1.0 V dc I C= 1.0 mA dc IC = 30 mA dc IC = 1.0 mA dc IC IB = 0.1 mA dc IB = 10 mA dc = 3.0 mA dc VCB = 4 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz V dc Min Max 40 60 300 |hfe| Cobo V dc VCE = 4 V dc, IC = 5.0 mA dc f = 100 MHz pF VBE IC = 1.0 mA dc VCE = 1.0 V dc IC = 30 mA dc VCE = 1.0 V dc V dc V dc 0.8 1.0 13 0.2 0.3 2.5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Service (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/399D Ltr CD CH HD LC LD LL LU L1 L2 TL TW P Q r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .100 2.54 .040 1.02 .010 0.25 45° TP 45° TP Notes 6 7,11 7 12 7 7 3 9 5 4 10 6 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and case is collector. 2. Metric equivalents are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. Measured in a zone beyond .250 (6.35 mm) from the seating plane. 12. Measured in the zone between .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 13. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions. 3 MIL-PRF-19500/399D Dimensions Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Millimeters Min Max 0.97 1.42 0.43 0.89 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.74 1.81 2.01 0.89 0.99 2.41 2.74 2.82 3.25 3.25 0.56 0.96 0.56 0.96 Max .056 .035 .024 .024 .024 .108 .079 .039 .108 .128 .128 .038 .038 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 4 MIL-PRF-19500/399D Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Glassivation: .016 x .016 inch (0.4064 x 0.4064 mm). .008 ±.0016 inch (0.2032 ±0.04064 mm). .0027 x .0027 inch 0.06858 x 0.06858 mm). .0027 x .0027 inch. Gold, 6500 ±1950 Ang. Aluminum, 17500 ±2500 Ang. Back side: Collector. SiO2, 7500 ±1500 Ang. FIGURE 3. JANHC and JANKC (A-version) die dimensions. 5 MIL-PRF-19500/399D 3. REQUIREMENTS 3.1. General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figures 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container . 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 6 MIL-PRF-19500/399D 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels Thermal impedance Method 3131 of MIL-STD-750. Thermal impedance Method 3131 of MIL-STD-750. 9 ICEX2 and hFE2 Not applicable 10 VCB = 12 V VCB = 12 V 11 ICEX2 and hFE2 ∆ICEX2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = ±20 percent. ICEX2 and hFE2 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ∆ICEX2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = ±20 percent. Subgroup 2 of table I herein; ∆ICEX2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = ±20 percent. *3c 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 V dc, power shall be PT = 400 mW. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein; they apply to subgroups B4 and B5 (JANS) and subgroups 1, 2, 3 (JAN, JANTX, JANTXV). 7 MIL-PRF-19500/399D 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. * Subgroup Method Conditions B4 1037 VCB = 10 V dc. B5 1027 VCB = 10 V dc; 1,000 hours at 75 percent of maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum. N = 45, c = 0. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1027 Steady-state life: Test condition B, 340 hours, VCB = 10 V dc, power shall be applied to the device to achieve TJ = +150°C minimum, and minimum PD = 75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. 2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table II herein. Delta requirements apply to subgroup C6. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E, not applicable to UB. C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. 8 MIL-PRF-19500/399D 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E, (method 2036 not applicable for UB devices). C6 1026 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with the applicable steps of table III herein; except, ZθJX need not be performed. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 9 MIL-PRF-19500/399D TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 2/ 2071 n = 45 devices, c = 0 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Visual and mechanical inspection 3/ Solderability 3/ 4/ Group A, subgroup 2 Electrical measurements 4/ Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Collector to base cutoff current 3036 Bias condition D, VCB = 20 V dc ICBO 10 µA dc Emitter to base cutoff current 3061 Bias condition D, VEB = 4.5 V dc IEBO 10 µA dc Breakdown voltage, collector to emitter 3011 Bias condition D, IC = 10 µA dc, pulsed (see 4.5.1) V(BR)CEO Collector to emitter cutoff current 3041 Bias condition A; VCE = 10 V dc, VBE = 0.4 V dc ICEX1 1.0 µA dc Collector to emitter cutoff current 3041 Bias condition A; VCE = 10 V dc, VBE = 2.0 V dc ICEX2 5.0 nA dc Forward-current transfer ratio 3076 VCE = 1 V dc; IC = 1.0 mA dc hFE1 Subgroup 2 See footnotes at end of table. 10 12 40 V dc MIL-PRF-19500/399D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued 300 Forward-current transfer ratio 3076 VCE = 1 V dc; IC = 10 mA dc, pulsed (see 4.5.1) hFE2 60 Forward-current transfer ratio 3076 VCE = 1 V dc; IC = 30 mA dc; pulsed (see 4.5.1) hFE3 30 Collector to emitter saturated voltage 3071 IC = 1.0 mA dc; IB = 0.1 mA dc VCE(sat)1 0.2 V dc Collector to emitter saturated voltage 3071 IC = 30 mA dc; IB = 3.0 mA dc, pulsed (see 4.5.1) VCE(sat)2 0.3 V dc Base emitter voltage (nonsaturated) 3066 Test condition B, VCE = 1.0 V dc, IC = 1.0 mA dc VBE1 0.8 V dc Base emitter voltage (nonsaturated) 3066 Test condition B, VCE = 1.0 V dc, IC = 30 mA dc VBE2 1.0 V dc ICEX3 5.0 µA dc Subgroup 3 High-temperature operation: Collector to emitter cutoff current TA = +150°C 3041 TA = -55°C Low-temperature operation: Forward-current transfer ratio Bias condition A; VCE = 10 V dc, VEB = 2 V dc 3076 VCE = 1.0 V dc; IC = 10 mA dc; pulsed (see 4.5.1) See footnotes at end of table. 11 hFE4 30 MIL-PRF-19500/399D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 Magnitude of common emitter small-signal short- circuit forwardcurrent transfer ratio 3306 VCE = 4 V dc; IC = 5.0 mA dc; f = 100 MHz |hfe1| 13 Magnitude of common emitter small-signal short- circuit forwardcurrent transfer ratio 3306 VCE = 4 V dc; IC = 10 mA dc; f = 100 MHz |hfe2| 14 Magnitude of common emitter small-signal short- circuit forwardcurrent transfer ratio 3306 VCE = 4 V dc; IC = 30 mA dc; f = 100 MHz |hfe3| 12 Open circuit output capacitance 3236 VCB = 4 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo Input capacitance (output open-circuited) 3240 VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cibo 2.5 2.5 pF pF Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, unless otherwise specified, see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices 5/ Not required for laser marked devices. 12 MIL-PRF-19500/399D TABLE II. Groups B, and C delta measurements. Step Inspection MIL-STD-750 Method 1. 3076 Forward current transfer ratio Symbol Conditions VCE = 1.0 V dc; IC = 10 mA dc; pulsed (see 4.5.1) Limit Min ∆hFE2 Unit Max ±20 percent change from initial value *TABLE III. Group E inspection (all quality levels) – for qualification only. Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles. Fine leak Gross leak Electrical measurements See group A, subgroup 2 and 4.5.3 herein. Subgroup 2 45 devices c=0 Intermittent life 1037 Intermittent operation life: VCB = 10 V dc; 6,000 cycles. See group A, subgroup 2 and 4.5.3 herein. 1033 Condition A ≥ 400 V Condition B < 400 V Electrical measurements Subgroup 3, 4, 5, 6, and 7 Not applicable Subgroup 8 Reverse stability 13 45 devices c=0 MIL-PRF-19500/399D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N3960) will be identified on the QPL. Die ordering information PIN Manufacturer 34156 2N3960 JANHCA2N3960 JANKCA2N3960 14 MIL-PRF-19500/399D * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2557) Review activities: Army - AR, MI Navy - AS, MC Air Force - 19, 71 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/399D 2. DOCUMENT DATE 20 February 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960 AND 2N3960UB JAN, JANTX, JANTXV, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99