Microsemi JANTXV2N5415S Pnp low power silicon transistor Datasheet

TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
Qualified Level
2N5415
2N5415S
JAN
JANTX
JANTXV
2N5416
2N5416S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
@ TC = +250C
Operating & Storage Temperature Range
Symbol
2N5415
2N5416
Units
VCEO
VCBO
VEBO
IC
200
200
300
350
Vdc
Vdc
Vdc
Adc
W
W
0
C
6.0
1.0
0.75
10
-65 to +200
PT
Top, Tstg
TO- 5*
2N5415, 2N5416
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 4.28 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
Max.
17.5
Unit
C/W
0
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
50
1.0
50
1.0
µAdc
mAdc
µAdc
mAdc
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 200 Vdc
VCE = 250 Vdc
VCE = 300 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Emitter Cutoff Current
VCE = 200 Vdc, VBE = 1.5 Vdc
VCE = 300 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 175 Vdc
VCB = 280 Vdc
Collector-Base Cutoff Current
VCB = 200 Vdc
VCB = 350 Vdc
2N5415
2N5415
2N5416
2N5416
ICEO
IEBO
20
2N5415
2N5416
ICEX
50
50
2N5415
2N5416
ICBO1
50
50
2N5415
2N5416
ICBO2
500
500
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
µAdc
µAdc
µAdc
µAdc
µAdc
120101
Page 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
hFE
30
15
120
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage
IC = 50 mAdc, VCE = 10 Vdc
2.0
VCE(sat)
1.5
VBE
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Forward
hfe
3.0
hfe
25
15
Cobo
15
pF
Cibo
75
pF
t
on
1.0
µs
off
10
µs
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
Turn-Off Time
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
t
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc
2N5415
Test 4
VCE = 300 Vdc, IC = 10 mAdc
2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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