DB LECTRO Inc. High Voltage, Photo Mos Relay E D KAQV414/414A UL 1577/ UL 508 (File No.E108430), FI EN60950 (File No.FI13698) Features KAQV414 1. Normally Close, Single Pole Single Throw 2. Control 400VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA 5. Low ON-Resistance 6. dv/dt, >500V/ms Unit : mm TOLERANCE : ± 0.2mm 7. Isolation Test Voltage, 3750VACrms KAQV414A Absolute Maximum Ratings (Ta=25°C) Emitter ( Input ) Detector ( Output ) Reverse Voltage……………………………5.0V Output Breakdown Voltage ……………±400V Continuous Forward Current ……………50mA Continuous Load Current ……………±130mA Peak Forward Current ………………………1A Power Dissipation ……………………500mW Power Dissipation ……………………100mW Unit : mm TOLERANCE : ± 0.2mm Derate Linearly from 25°C …………1.3mW/°C General Characteristics Operate/ Reverse time Isolation Test Voltage……………3750VACrms Storage Temperature Range …-40°C to +125°C Isolation Resistance Operating Temperature Range…-30°C to +85°C 10 Vio=500V, Ta=25°C ……………………10 Junction Temperature……………………100°C Total Power Dissipation ………………550mW Soldering Temperature, Derate Linearly from 25°C …………2.5mW/°C 2mm from case, 10 sec …………………260°C Electro-optical Characteristics Parameter (Ta=25°C) Symbol Conditions Min. Typ. Max. Unit 1.2 1.5 V 5 mA Emitter (Input) VF IF =10mA Operation Input Current IFOFF VL =±20V, IL 5uA Recovery Input Current IFON VL =±20V, IL =100mA, t =10mS 0.2 400 Forward Voltage mA Detector (Output) Output Breakdown Voltage VB IB=50uA Output Off-State Leakage ITOFF VT =100V, IF =10mA CISO IF =0, f =1MHZ I/O Capacitance A ON Resistance Connection B V 0.2 6 40 IL =100mA, IF =10mA RON C 2 uA pF 50 20 25 10 12.5 Reverse (ON) Time TON IF =10mA, VL =±20V 0.6 1.5 ms Operate (OFF) Time TOFF t =10ms, IL =±100mA 0.3 1.0 ms Mos Relay Schematic and Wiring Diagrams Type Schematic Output configuration Load Connection AC/DC A DC B DC C KAQV414 & 1a KAQV414A Wiring Diagrams DB LECTRO Inc. KAQV414/414A Data Curve Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Reverse (NO) Time Msec Ambient Temperature Ta (°C) Fig.6 LED reverse (NO) current vs. ambient temperature Load voltage: 400V(DC) Continuous load current: 130mA(DC) Ambient Temperature Ta (°C) Fig.8 Voltage vs. current characteristics of output at MOS FET portion Measured portion: across terminals 4 and 6 pin Ambient temperature: 25°C Ambient Temperature Ta (°C) Fig.9 Off state leakage current Across terminals 4 and 6 pin Ambient temperature: 25°C LED Dropout Voltage (V) Off State Leakage Current Fig.7 LED dropout voltage vs. ambient temperature LED current: 5 to 50mA Ambient Temperature Ta (°C) LED reverse (NO) Current (mA) Fig.5 LED operate (OFF) vs. ambient temperature Load voltage: 400V(DC); Continuous load current: 130mA(DC) LED Operate Current (mA) Fig.4 Reverse (NO) time vs. ambient temperature LED current: 5mA; Load voltage: 400V(DC); Continuous load current: 130mA(DC) Fig.3 Operate (OFF) time vs. ambient temperature Load voltage 400V(DC) LED current: 5mA Continuous load current: 130mA(DC) Operate (OFF) Time Msec Fig.2 On resistance vs. ambient temperature Across terminals 4 and 6 pin LED current: 0mA Continuous load current: 130mA(DC) On Resistonce () Load Current (mA) Fig.1 Load current vs. ambient temperature Allowable ambient temperature: -40°C to +85°C Ambient Temperature Ta (°C) LED Forward Current (mA) Fig.12 Applied voltage vs. output capacitance Across terminals 4 and 6 pin Frequency: 1MHz Ambient temperature: 25°C Output CapaCitance (pF) Fig.11 LED forward current vs. reverse (NO) timeAcross terminals 4 and 6 pin; Load voltage: 400V (DC); Continuous load current: 130mA (DC); Ambient temperature: 25°C Reverse (NO) Time Msec Operate (OFF) Time Msec Fig.10 LED forward current vs. operate (OFF) time Across terminals 4 and 6 pin; Load voltage: 400V (DC); Continuous load current: 130mA (DC); Ambient temperature: 25°C Load Voltage (V) LED Forward Current (mA) Applied Voltage (V) DB LECTRO Inc. 3600 boul. matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714