Diodes L06VAK Dual n-channel enhancement mode field effect transistor Datasheet

DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
Halogen and Antimony Free
"Green" Device (Note 3)
ESD Protected up to 2kV
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
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SOT-563
Maximum Ratings
S1
D2
S1
G1
S2
G2
D1
G2
S2
D1
DMN5L06VAK
DMN5010VAK
@TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics
Symbol
VDSS
VDGR
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDM
Value
50
50
±20
±40
280
1.5
Unit
V
V
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
V
mA
A
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
G1
DMN5L06VK
TOP VIEW
ESD protected up to 2kV
D2
Symbol
PD
RθJA
TJ, TSTG
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
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DMN5/L06VK/L06VAK/010VAK
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TA = 25°C unless otherwise specified
@ TC = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Min
Typ
Max
Unit
BVDSS
IDSS
50
⎯
⎯
⎯
⎯
60
V
nA
IGSS
⎯
⎯
1
500
50
µA
nA
nA
VGS(th)
0.49
ID(ON)
|Yfs|
VSD
⎯
⎯
⎯
0.5
200
0.5
⎯
⎯
⎯
⎯
1.4
⎯
⎯
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
RDS (ON)
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
1.0
V
3.0
2.5
2.0
Ω
⎯
⎯
1.4
A
mS
V
50
25
5.0
pF
pF
pF
Test Condition
VGS = 0V, ID = 10μA
VDS = 50V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 25V, VGS = 0V
f = 1.0MHz
4. Short duration pulse test used to minimize self-heating effect.
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
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DMN5/L06VK/L06VAK/010VAK
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
10
0
-50
1
0
75 100 125
-25
25
50
0
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
10
TA = 25°C
Pulsed
ID = 280mA
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
IDR, REVERSE DRAIN CURRENT (A)
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
VGS = 10V
Pulsed
ID = 280mA
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
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IDR, REVERSE DRAIN CURRENT (A)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
DMN5/L06VK/L06VAK/010VAK
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
PD, POWER DISSIPATION (mW)
250
200
150
100
50
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 Derating Curve - Total
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
150
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DMN5/L06VK/L06VAK/010VAK
Ordering Information
(Note 5)
Part Number
DMN5L06VK-7
DMN5L06VAK-7
DMN5010VAK-7
Notes:
Case
SOT-563
SOT-563
SOT-563
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 6)
DMN5010VAK
DMN5L06VAK
DMN5L06VK
G1
D2
S1
KAB YM
S2
Notes:
G2
D2
KAB= DMN5L06VK Product Type
Marking Code (See Note 6)
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month ex: 9 = September
S1
G1
xxx = Product Type Marking Code:
KAE or KAC (See Note 6)
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month ex: 9 = September
xxx YM
G2
D1
S2
D1
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
Code
Month
Code
2006
T
2007
U
Jan
1
Feb
2
2008
V
Mar
3
Apr
4
2009
W
May
5
Jun
6
2010
X
Jul
7
Aug
8
2011
Y
Sep
9
Oct
O
2012
Z
Nov
N
Dec
D
Package Outline Dimensions
A
B
C
D
G
M
K
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
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© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
6 of 6
www.diodes.com
January 2010
© Diodes Incorporated
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