LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) ID ID mAdc IDM ±115 ±75 ±800 VGS VGSM ±20 ±40 Vdc Vpk Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) 1 2 CASE 318, STYLE 21 SOT– 23 (TO–236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.5 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W TJ, Tstg –55 to +150 °C Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Junction and Storage Temperature N - Channel 3 1 2 2.4 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 702 W 1 2 Gate Source 702 W = Device Code = Work Week ORDERING INFORMATION Device Package Shipping 2N7002LT1 SOT–23 3000 Tape & Reel 2N7002LT3 SOT–23 10,000 Tape & Reel L2N7002LT1–1/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 100 nAdc Gate–Body Leakage Current, Reverse (VGS = –20 Vdc) IGSSR – – –100 nAdc VGS(th) 1.0 – 2.5 Vdc ID(on) 500 – – mA – – – – 3.75 0.375 – – – – – – – – 7.5 13.5 7.5 13.5 gFS 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – – 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – – 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – – 5.0 pF td(on) – – 20 ns td(off) – – 40 ns VSD – – –1.5 Vdc IS – – –115 mAdc ISM – – –800 mAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C rDS(on) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (V DD = 25 Vdc , ID 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. L2N7002LT1–2/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0.8 VGS = 10 V I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -55°C +100 Figure 3. Temperature versus Static Drain–Source On–Resistance +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (°C) +100 +140 Figure 4. Temperature versus Gate Threshold Voltage L2N7002LT1–3/3