LRC L9014QLT1G General purpose transistor Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
3
Shipping
L9014QLT1G
S-L9014QLT1G
14Q
3000/Tape&Reel
L9014QLT3G
S-L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G
S-L9014RLT1G
14R
3000/Tape&Reel
L9014RLT3G
S-L9014RLT3G
14R
10000/Tape&Reel
L9014SLT1G
S-L9014SLT1G
14S
3000/Tape&Reel
L9014SLT3G
S-L9014SLT3G
14S
10000/Tape&Reel
L9014TLT1G
S-L9014TLT1G
14T
3000/Tape&Reel
L9014TLT3G
S-L9014TLT3G
14T
10000/Tape&Reel
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5
V
IC
100
mA
Collector current-continuoun
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
Symbol
Unit
PD
o
TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Max
R©JA
225
mW
1.8
mW/ oC
556
o
300
mW
2.4
mW/ oC
C/W
PD
Total Device Dissipation
o
Alumina Substrate, (2) TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
R©JA
417
Junction and Storage Temperature
TJ ,Tstg
-55 to +150
o
C /W
o
C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
45
-
-
V
V(BR)EBO
5
-
-
V
V(BR)CBO
50
-
-
V
Collector Cutoff Current (VCB=40V)
ICBO
-
-
100
nA
Emitter Cutoff Current (VEB=3V)
IEBO
100
nA
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100­A)
Collector-Base Breakdown Voltage
(IC=100­A)
ON CHARACTERISTICS
DC Current Gain
(IC=1mA, VCE=5V)
HFE
150
-
1000
VCE
-
-
0.3
Collector-Emitter Saturation Voltage
(IC=100mA,IB=5mA)
NOTE:
*
Q
R
S
T
HFE
150~300
200~400
300~600
400~1000
V
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
STATIC CHARACTERISTIC
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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