NSC LM124QML Low power quad operational amplifier Datasheet

LM124A/LM124QML
Low Power Quad Operational Amplifiers
General Description
Advantages
The LM124/124A consists of four independent, high gain,
internally frequency compensated operational amplifiers
which were designed specifically to operate from a single
power supply over a wide range of voltages. Operation from
split power supplies is also possible and the low power
supply current drain is independent of the magnitude of the
power supply voltage.
n Eliminates need for dual supplies
n Four internally compensated op amps in a single
package
n Allows directly sensing near GND and VOUT also goes
to GND
n Compatible with all forms of logic
n Power drain suitable for battery operation
Application areas include transducer amplifiers, DC gain
blocks and all the conventional op amp circuits which now
can be more easily implemented in single power supply
systems. For example, the LM124/124A can be directly operated off of the standard +5Vdc power supply voltage which
is used in digital systems and will easily provide the required
interface electronics without requiring the additional +15Vdc
power supplies.
Unique Characteristics
n In the linear mode the input common-mode voltage
range includes ground and the output voltage can also
swing to ground, even though operated from only a
single power supply voltage
n The unity gain cross frequency is temperature
compensated
n The input bias current is also temperature compensated
Features
n Internally frequency compensated for unity gain
n Large DC voltage gain 100 dB
n Wide bandwidth (unity gain) 1 MHz
(temperature compensated)
n Wide power supply range:
Single supply 3V to 32V
or dual supplies ± 1.5V to ± 16V
n Very low supply current drain (700 µA) — essentially
independent of supply voltage
n Low input biasing current 45 nA
(temperature compensated)
n Low input offset voltage 2 mV
and offset current: 5 nA
n Input common-mode voltage range includes ground
n Differential input voltage range equal to the power
supply voltage
n Large output voltage swing 0V to V+ − 1.5V
Ordering Information
NS PART NUMBER
SMD PART NUMBER
NS PACKAGE NUMBER
LM124J/883
7704301CA
J14A
14LD CERDIP
LM124AE/883
77043022A
E20A
20LD LEADLESS CHIP CARRIER
LM124AJ/883
7704302CA
J14A
14LD CERDIP
LM124AW/883
W14B
PACKAGE DISCRIPTION
14LD CERPACK
LM124AWG/883
7704302XA
WG14A
LM124AJLQMLV
5962L9950401VCA,
50k rd(Si)
J14A
14LD CERDIP
LM124AJRQMLV
5962R9950401VCA,
100k rd(Si)
J14A
14LD CERDIP
LM124AWGLQMLV
5962L9950401VZA,
50k rd(Si)
WG14A
14LD CERAMIC SOIC
LM124AWGRQMLV
5962R9950401VZA,
100k rd(Si)
WG14A
14LD CERAMIC SOIC
LM124AWLQMLV
5962L9950401VDA,
50k rd(Si)
W14B
14LD CERPACK
LM124AWRQMLV
5962R9950401VDA,
100k rd(Si)
W14B
14LD CERPACK
© 2005 National Semiconductor Corporation
DS201080
14LD CERAMIC SOIC
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LM124A/LM124QML Low Power Quad Operational Amplifiers
January 2005
LM124A/LM124QML
Connection Diagrams
Leadless Chip Carrier
20108055
See NS Package Number E20A
Dual-In-Line Package
20108001
Top View
See NS Package Number J14A
20108033
See NS Package Number W14B or WG14A
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2
LM124A/LM124QML
Schematic Diagram
(Each Amplifier)
20108002
3
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LM124A/LM124QML
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage, V+
32Vdc or +16Vdc
Differential Input Voltage
32Vdc
Input Voltage
−0.3Vdc to +32Vdc
Input Current
(VIN < −0.3Vdc) (Note 4)
50 mA
Power Dissipation (Note 2)
CERDIP
1260mW
CERPACK
700mW
LCC
1350mW
CERAMIC SOIC
700mW
Output Short-Circuit to GND
(One Amplifier) (Note 3)
V+ ≤ 15Vdc and TA = 25˚C
Continuous
−55˚C ≤ TA ≤ +125˚C
Operating Temperature Range
Maximum Junction Temperature
150˚C
−65˚C ≤ TA ≤ +150˚C
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
260˚C
Thermal Resistance ThetaJA
CERDIP (Still Air)
103 C/W
(500LF/Min Air flow)
51 C/W
CERPACK (Still Air)
176 C/W
(500LF/Min Air flow)
116 C/W
LCC (Still Air)
91 C/W
(500LF/Min Air flow)
66 C/W
CERAMIC SOIC (Still Air)
176 C/W
(500LF/Min Air flow)
116 C/W
ThetaJC
CERDIP
19 C/W
CERPACK
18 C/W
LCC
24 C/W
CERAMIC SOIC
18 C/W
Package Weight (Typical)
CERDIP
TBD
CERPACK
TBD
LCC
TBD
CERAMIC SOIC
410mg
ESD Tolerance (Note 5)
250V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than -0.3Vdc (at 25 C).
Note 5: Human body model, 1.5 kΩ in series with 100 pF.
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4
LM124A/LM124QML
Quality Conformance Inspection
MIL-STD-883, Method 5005 — Group A
Subgroup
Description
Temp ( ˚C)
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
5
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LM124A/LM124QML
LM124A 883 DC Electrical Characteristics
(The following conditions apply to all the following parameters, unless otherwise specified.) All voltages referenced to device
ground.
SYMBOL
PARAMETER
CONDITIONS
Icc
Power Supply Current V+ = 5V
NOTES
MIN
V+ = 30V
Isink
Output Sink Current
SUBGROUPS
1.2
mA
1, 2, 3
3.0
mA
1
4.0
mA
2, 3
uA
1
12
V+ = 15V, Vout = 2V,
+Vin = 0mV, -Vin = +65mV
10
mA
1
5
mA
2, 3
mA
1
Output Source
Current
V+ = 15V, Vout = 2V,
+Vin = 0mV, -Vin = -65mV
Ios
Short Circuit Current
V+ = 5V, Vout = 0V
-60
Vio
Input Offset Voltage
V+ = 30V, Vcm = 0V
-2
-4
V+ = 30V, Vcm = 28.5V
V+ = 30V, Vcm = 28V
-20
-10
mA
2, 3
mA
1
2
mV
1
4
mV
2, 3
-2
2
mV
1
-4
4
mV
2, 3
V+ = 5V, Vcm = 0V
-2
2
mV
1
-4
4
mV
2, 3
dB
1
10
nA
1
10
nA
2, 3
-10
10
nA
1
-30
30
nA
2, 3
dB
1
1
CMRR
Common Mode
Rejection Ratio
V+ = 30V, Vin = 0V to 28.5V
70
± Iib
Input Bias Current
V+ = 5V, Vcm = 0V
-50
-100
Input Offset Current
UNIT
V+ = 15V, Vout = 200mV,
+Vin = 0mV, -Vin = +65mV
Isource
Iio
MAX
V+ = 5V, Vcm = 0V
PSRR
Power Supply
Rejection Ratio
V+ = 5V to 30V, Vcm = 0V
65
Vcm
Common Mode
Voltage Range
V+ = 30V
Avs
Large Signal Gain
V+ = 15V, Rl = 2K Ohms,
Vo = 1V to 11V
25
V/mV
5, 6
Voh
Output Voltage High
V+ = 30V, Rl = 2K Ohms
26
V
4, 5, 6
V+ = 30V, Rl = 10K Ohms
27
V
4, 5, 6
Vol
Output Voltage Low
V+ = 30V, Rl = 10K Ohms
40
mV
4, 5, 6
V+ = 30V, Isink = 1uA
40
mV
4
100
mV
5, 6
20
mV
4, 5, 6
dB
4
(Note 6)
28.5
V
(Note 6)
28
V
2, 3
V/mV
4
(Note 7)
(Note 7)
50
V+ = 5V, Rl = 10K Ohms
Channel Separation
1KHz, 20KHz
Amp to Amp Coupling
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(Note 8)
6
80
(The following conditions apply to all the following parameters, unless otherwise specified.) All voltages referenced to device
ground.
SYMBOL
PARAMETER
CONDITIONS
Icc
Power Supply Current V+ = 5V
NOTES
MIN
V+ = 30V
Isink
Output Sink Current
MAX
UNIT
SUBGROUPS
1.2
mA
1, 2, 3
3.0
mA
1
4.0
mA
2, 3
uA
1
V+ = 15V, Vout = 200mV,
+Vin = 0mV, -Vin = +65mV
12
V+ = 15V, Vout = 2V,
+Vin = 0mV, -Vin = +65mV
10
mA
1
5
mA
2, 3
mA
1
Isource
Output Source
Current
V+ = 15V, Vout = 2V,
+Vin = 0mV, -Vin = -65mV
-20
Ios
Short Circuit Current
V+ = 5V, Vout = 0V
-60
Vio
Input Offset Voltage
V+ = 30V, Vcm = 0V
-5
-7
-10
mA
2, 3
mA
1
5
mV
1
7
mV
2, 3
-5
5
mV
1
-7
7
mV
2, 3
V+ = 5V, Vcm = 0V
-5
5
mV
1
-7
7
mV
2, 3
V+ = 30V, Vcm = 28.5V
-5
5
mV
1
dB
1
nA
1
V+ = 30V, Vcm = 28V
CMRR
Common Mode
Rejection Ratio
V+ = 30V, Vin = 0V to 28.5V
70
+Iib
Input Bias Current
V+ = 5V, Vcm = 0V
-150
-300
10
nA
2, 3
Iio
Input Offset Current
V+ = 5V, Vcm = 0V
-30
30
nA
1
-100
100
nA
2, 3
dB
1
PSRR
Power Supply
Rejection Ratio
V+ = 5V to 30V, Vcm = 0V
Vcm
Common Mode
Voltage Range
V+ = 30V
Large Signal Gain
V+ = 15V, Rl = 2K Ohms,
Vo = 1V to 11V
Avs
Voh
Vol
Output Voltage High
Output Voltage Low
65
(Note 6)
28.5
V
1
(Note 6)
28
V
2, 3
50
V/mV
4
25
V/mV
5, 6
V+ = 30V, Rl = 2K Ohms
26
V
4, 5, 6
V+ = 30V, Rl = 10K Ohms
27
V
4, 5, 6
V+ = 30V, Rl = 10K Ohms
40
mV
4, 5, 6
V+ = 30V, Isink = 1uA
40
mV
4
100
mV
5, 6
V+ = 5V, Rl = 10K Ohms
Channel Separation
(Amp to Amp
Coupling)
10
20
1KHz, 20KHz
(Note 8)
7
80
mV
4, 5, 6
dB
4
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LM124A/LM124QML
LM124 883 DC Electrical Characteristics
LM124A/LM124QML
LM124A RAD HARD DC Electrical Characteristics
(Note 10)
(The following conditions apply to all the following parameters, unless otherwise specified.) All voltages referenced to device
ground.
SYMBOL
PARAMETER
CONDITIONS
Vio
Input Offset Voltage
Iio
± Iib
Input Offset Current
Input Bias Current
MIN
MAX
UNIT
SUBGROUPS
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
-2
2
mV
1
-4
4
mV
2, 3
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
-2
2
mV
1
-4
4
mV
2, 3
Vcc+ = 5V, Vcc- = Gnd,
Vcm = -1.4V
-2
2
mV
1
-4
4
mV
2, 3
Vcc+ = 2.5V, Vcc- = -2.5,
Vcm = 1.1V
-2
2
mV
1
-4
4
mV
2, 3
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
-10
10
nA
1, 2
-30
30
nA
3
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
-10
10
nA
1, 2
-30
30
nA
3
Vcc+ = 5V, Vcc- = Gnd,
Vcm = -1.4V
-10
10
nA
1, 2
-30
30
nA
3
Vcc+ = 2.5V, Vcc- = -2.5,
Vcm = 1.1V
-10
10
nA
1, 2
-30
30
nA
3
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
-50
+0.1
nA
1, 2
-100
+0.1
nA
3
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
-50
+0.1
nA
1, 2
-100
+0.1
nA
3
Vcc+ = 5V, Vcc- = Gnd,
Vcm = -1.4V
-50
+0.1
nA
1, 2
-100
+0.1
nA
3
Vcc+ = 2.5V, Vcc- = -2.5,
Vcm = 1.1V
-50
+0.1
nA
1, 2
-100
+0.1
nA
3
Vcc- = Gnd, Vcm = -1.4V,
5V ≤ Vcc ≤ 30V
-100
100
uV/V
1, 2, 3
76
dB
1, 2, 3
-70
mA
1, 2,3
mA
1, 2
+PSRR
Power Supply
Rejection Ratio
CMRR
Common Mode
Rejection Ratio
Ios+
Output Short Circiut
Current
Icc
Power Supply Current Vcc+ = 30V, Vcc- = Gnd
Delta Vio/
Delta T
Input Offset Voltage
Temperature
Sensitivity
Delta Iio/
Delta T
Input Offset Current
Temperature
Sensitivity
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NOTES
Vcc+ = 30V, Vcc- = Gnd,
Vo = 25V
3
4
mA
3
(Note 9)
-30
30
uV/ ˚C
2
-55˚C ≤ TA ≤ +25˚C, +Vcc = 5V, (Note 9)
-Vcc = 0V, Vcm = -1.4V
-30
30
uV/ ˚C
3
+25˚C ≤ TA ≤ +125˚C,
+Vcc = 5V, -Vcc = 0V,
Vcm = -1.4V
(Note 9)
-400
400
pA/˚ C
2
-55˚C ≤ TA ≤ +25˚C, +Vcc = 5V, (Note 9)
-Vcc = 0V, Vcm = -1.4V
-700
700
pA/ ˚C
3
+25˚C ≤ TA ≤ +125˚C,
+Vcc = 5V, -Vcc = 0V,
Vcm = -1.4V
8
(Note 10)
(The following conditions apply to all the following parameters, unless otherwise specified.) All voltages referenced to device
ground.
SYMBOL
PARAMETER
CONDITIONS
Vol
Logical "0" Output
Voltage
Voh
Avs+
Avs
+Vop
Logical "1" Output
Voltage
Voltage Gain
Voltage Gain
Maximum Output
Voltage Swing
NOTES
MIN
MAX
UNIT
SUBGROUPS
Vcc+ = 30V, Vcc- = Gnd,
Rl = 10K Ohms
35
mV
4, 5, 6
Vcc+ = 30V, Vcc- = Gnd,
Iol = 5mA
1.5
V
4, 5, 6
Vcc+ = 4.5V, Vcc- = Gnd,
Iol = 2uA
0.4
V
4, 5, 6
Vcc+ = 30V, Vcc- = Gnd,
Ioh = -10mA
27
V
4, 5, 6
Vcc+ = 4.5V, Vcc- = Gnd,
Ioh = -10mA
2.4
V
4, 5, 6
Vcc+ = 30V, Vcc- = Gnd,
1V ≤ Vo ≤ 26V, Rl = 10K Ohms
50
V/mV
4
25
V/mV
5, 6
Vcc+ = 30V, Vcc- = Gnd,
5V ≤ Vo ≤ 20V, Rl = 2K Ohms
50
V/mV
4
25
V/mV
5, 6
Vcc+ = 5V, Vcc- = Gnd,
1V ≤ Vo ≤ 2.5V, Rl = 10K Ohms
10
V/mV
4, 5, 6
Vcc+ = 5V, Vcc- = Gnd,
1V ≤ Vo ≤ 2.5V, Rl = 2K Ohms
10
V/mV
4, 5, 6
Vcc+ = 30V, Vcc- = Gnd,
Vo = +30V, Rl = 10K Ohms
27
V
4, 5, 6
Vcc+ = 30V, Vcc- = Gnd,
Vo = +30V, Rl = 2K Ohms
26
V
4, 5, 6
TR(tr)
Transient Response:
Rise Time
Vcc+ = 30V, Vcc- = Gnd
1
uS
7, 8A, 8B
TR(os)
Transient Response:
Overshoot
Vcc+ = 30V, Vcc- = Gnd
50
%
7, 8A, 8B
± Sr
Slew Rate: Rise
Vcc+ = 30V, Vcc- = Gnd
0.1
V/uS
7, 8A, 8B
Slew Rate: Fall
Vcc+ = 30V, Vcc- = Gnd
0.1
V/uS
7, 8A, 8B
9
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LM124A/LM124QML
LM124A RAD HARD AC/DC Electrical Characteristics
LM124A/LM124QML
LM124A RAD HARD — AC Electrical Characteristics
(Note 10)
(The following conditions apply to all the following parameters, unless otherwise specified.) AC: +Vcc = 30V, -Vcc = 0V
SYMBOL
PARAMETER
CONDITIONS
NI(BB)
Noise Broadband
NI(PC)
Cs
MAX
UNIT
SUBGROUPS
+Vcc = 15V, -Vcc = -15V,
BW = 10Hz to 5KHz
15
uVrm s
7
Noise Popcorn
+Vcc = 15V, -Vcc = -15V,
Rs = 20K Ohms,
BW = 10Hz to 5KHz
50
uVpK
7
Channel Separation
+Vcc = 30V, -Vcc = Gnd,
Rl = 2K Ohms
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, A to B
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, A to C
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, A to D
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, B to A
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, B to C
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, B to D
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, C to A
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, C to B
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, C to D
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, D to A
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, D to B
80
dB
7
Rl = 2K Ohms,
Vin = 1V and 16V, D to C
80
dB
7
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NOTES
10
MIN
(Note 10)
(The following conditions apply to all the following parameters, unless otherwise specified.) DC: "Delta calculationsperformed
on QMLV devices at group B, subgroup 5 only"
SYMBOL
PARAMETER
CONDITIONS
Vio
Input Offset Voltage
± Iib
Input Bias Current
NOTES
MIN
MAX
UNIT
SUBGROUPS
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
-0.5
0.5
mV
1
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
-10
10
nA
1
Electrical Characteristics — POST RADIATION LIMITS +25˚C
(Note 10)
(The following conditions apply to all the following parameters, unless otherwise specified.) All voltages referenced to device
ground.
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
MAX
UNIT
SUBGROUPS
Vio
Input Offset Voltage
Vcc+ = 30V, Vcc- = Gnd,
Vcm = -15V
(Note 10)
-2.5
2.5
mV
1
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
(Note 10)
-2.5
2.5
mV
1
Vcc+ = 5V, Vcc- = GND,
Vcm = -1.4V
(Note 10)
-2.5
2.5
mV
1
Vcc+ = 2.5V, Vcc- = -2.5,
Vcm = 1.1V
(Note 10)
-2.5
2.5
mV
1
Vcc+ = 30V, Vcc- = GND,
Vcm = -15V
(Note 10)
-15
15
nA
1
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
(Note 10)
-15
15
nA
1
Vcc+ = 5V, Vcc- = GND,
Vcm = -1.4V
(Note 10)
-15
15
nA
1
Vcc+ = 2.5V, Vcc- = -2.5V,
Vcm = 1.1V
(Note 10)
-15
15
nA
1
Vcc+ = 30V, Vcc- = GND,
Vcm = -15V
(Note 10)
-75
+0.1
nA
1
Vcc+ = 2V, Vcc- = -28V,
Vcm = 13V
(Note 10)
-75
+0.1
nA
1
Vcc+ = 5V, Vcc- = GND,
Vcm = -1.4V
(Note 10)
-75
+0.1
nA
1
Vcc+ = 2.5V, Vcc- = -2.5V,
Vcm = 1.1V
(Note 10)
-75
+0.1
nA
1
Vcc+ = 30V, Vcc- = GND,
1V ≤ Vo ≤ 26V, Rl = 10K Ohms
(Note 10)
40
V/mV
4
Vcc+ = 30V, Vcc- = GND,
5V ≤ Vo ≤ 20V, Rl = 2K Ohms
(Note 10)
40
V/mV
4
Iio
± Iib
Avs+
Input Offset Current
Input Bias Current
Voltage Gain
Note 6: Guaranteed by Vio tests.
Note 7: Datalog reading in K=V/mV
Note 8: Guaranteed, not tested
Note 9: Calculated parameters
Note 10: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019
11
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LM124A/LM124QML
LM124A RAD HARD — DC Drift Values
LM124A/LM124QML
Typical Performance Characteristics
Input Voltage Range
Input Current
20108034
20108035
Supply Current
Voltage Gain
20108036
20108037
Open Loop Frequency
Response
Common Mode Rejection
Ratio
20108038
20108039
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12
LM124A/LM124QML
Typical Performance Characteristics
(Continued)
Voltage Follower Pulse
Response
Voltage Follower Pulse
Response (Small Signal)
20108041
20108040
Large Signal Frequency
Response
Output Characteristics
Current Sourcing
20108042
20108043
Output Characteristics
Current Sinking
Current Limiting
20108044
20108045
13
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LM124A/LM124QML
Where the load is directly coupled, as in dc applications,
there is no crossover distortion.
Capacitive loads which are applied directly to the output of
the amplifier reduce the loop stability margin. Values of
50 pF can be accommodated using the worst-case noninverting unity gain connection. Large closed loop gains or
resistive isolation should be used if larger load capacitance
must be driven by the amplifier.
The bias network of the LM124 establishes a drain current
which is independent of the magnitude of the power supply
voltage over the range of from 3 VDC to 30 VDC.
Application Hints
The LM124 series are op amps which operate with only a
single power supply voltage, have true-differential inputs,
and remain in the linear mode with an input common-mode
voltage of 0 VDC. These amplifiers operate over a wide range
of power supply voltage with little change in performance
characteristics. At 25˚C amplifier operation is possible down
to a minimum supply voltage of 2.3 VDC.
The pinouts of the package have been designed to simplify
PC board layouts. Inverting inputs are adjacent to outputs for
all of the amplifiers and the outputs have also been placed at
the corners of the package (pins 1, 7, 8, and 14).
Output short circuits either to ground or to the positive power
supply should be of short time duration. Units can be destroyed, not as a result of the short circuit current causing
metal fusing, but rather due to the large increase in IC chip
dissipation which will cause eventual failure due to excessive junction temperatures. Putting direct short-circuits on
more than one amplifier at a time will increase the total IC
power dissipation to destructive levels, if not properly protected with external dissipation limiting resistors in series
with the output leads of the amplifiers. The larger value of
output source current which is available at 25˚C provides a
larger output current capability at elevated temperatures
(see typical performance characteristics) than a standard IC
op amp.
The circuits presented in the section on typical applications
emphasize operation on only a single power supply voltage.
If complementary power supplies are available, all of the
standard op amp circuits can be used. In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will
allow operation above and below this value in single power
supply systems. Many application circuits are shown which
take advantage of the wide input common-mode voltage
range which includes ground. In most cases, input biasing is
not required and input voltages which range to ground can
easily be accommodated.
Precautions should be taken to insure that the power supply
for the integrated circuit never becomes reversed in polarity
or that the unit is not inadvertently installed backwards in a
test socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the
internal conductors and result in a destroyed unit.
Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes are
not needed, no large input currents result from large differential input voltages. The differential input voltage may be
larger than V+ without damaging the device. Protection
should be provided to prevent the input voltages from going
negative more than −0.3 VDC (at 25˚C). An input clamp diode
with a resistor to the IC input terminal can be used.
To reduce the power supply drain, the amplifiers have a
class A output stage for small signal levels which converts to
class B in a large signal mode. This allows the amplifiers to
both source and sink large output currents. Therefore both
NPN and PNP external current boost transistors can be used
to extend the power capability of the basic amplifiers. The
output voltage needs to raise approximately 1 diode drop
above ground to bias the on-chip vertical PNP transistor for
output current sinking applications.
For ac applications, where the load is capacitively coupled to
the output of the amplifier, a resistor should be used, from
the output of the amplifier to ground to increase the class A
bias current and prevent crossover distortion.
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14
LM124A/LM124QML
Typical Single-Supply Applications
(V+ = 5.0 VDC)
Non-Inverting DC Gain (0V Input = 0V Output)
20108005
*R not needed due to temperature independent IIN
DC Summing Amplifier
(VIN’S ≥ 0 VDC and VO ≥ VDC)
Power Amplifier
20108007
20108006
V0 = 0 VDC for VIN = 0 VDC
Where: V0 = V1 + V2 − V3 − V4
AV = 10
(V1 + V2) ≥ (V3 + V4) to keep VO > 0 VDC
15
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LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
LED Driver
(Continued)
“BI-QUAD” RC Active Bandpass Filter
20108008
20108009
fo = 1 kHz
Q = 50
AV = 100 (40 dB)
Fixed Current Sources
Lamp Driver
20108011
20108010
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16
LM124A/LM124QML
Typical Single-Supply Applications
Pulse Generator
(V+ = 5.0 VDC) (Continued)
Current Monitor
20108015
Squarewave Oscillator
20108012
*(Increase R1 for IL small)
Driving TTL
20108016
Pulse Generator
20108013
Voltage Follower
20108014
20108017
17
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LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
(Continued)
High Compliance Current Sink
20108018
IO = 1 amp/volt VIN
(Increase RE for Io small)
Low Drift Peak Detector
20108019
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18
Comparator with Hysteresis
(Continued)
Ground Referencing a Differential Input Signal
20108020
20108021
VO = VR
Voltage Controlled Oscillator Circuit
20108022
*Wide control voltage range: 0 VDC ≤ VC ≤ 2 (V+ −1.5 VDC)
Photo Voltaic-Cell Amplifier
20108023
19
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LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
(Continued)
AC Coupled Inverting Amplifier
20108024
AC Coupled Non-Inverting Amplifier
20108025
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20
LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
(Continued)
DC Coupled Low-Pass RC Active Filter
20108026
fO = 1 kHz
Q=1
AV = 2
High Input Z, DC Differential Amplifier
20108027
21
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LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
(Continued)
High Input Z Adjustable-Gain
DC Instrumentation Amplifier
20108028
Using Symmetrical Amplifiers to
Reduce Input Current (General Concept)
Bridge Current Amplifier
20108030
20108029
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22
LM124A/LM124QML
Typical Single-Supply Applications (V+ = 5.0 VDC)
(Continued)
Bandpass Active Filter
20108031
fO = 1 kHz
Q = 25
23
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LM124A/LM124QML
Revision History Section
Date
Released
Section
Originator
Changes
9–2–04
A
New Release, Corporate format
R. Malone
3 MDS data sheets converted into one
Corp. data sheet format. MNLM124-X,
Rev. 1A2, MNLM124A-X, Rev. 1A3 and
MRLM124A-X-RH, Rev. 5A0. MDS data
sheets will be archived.
01/27/05
B
Connection Diagrams, Quality
Conformance Inspection Section,
and Physical Dimensions drawings
R. Malone
Added E package Connection Diagram.
Changed verbiage under Quality
Conformance Title, and Updated
Revisions for the Marketing Drawings.
www.national.com
Revision
24
LM124A/LM124QML
Physical Dimensions
inches (millimeters) unless otherwise noted
SAMPLE TEXT Ceramic Dual-In-Line Package (J)
NS Package Number J14A
SAMPLE TEXT 20 Pin Leadless Chip Carrier, Type C (E)
NS Package Number E20A
25
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LM124A/LM124QML
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
SAMPLE TEXT Ceramic Flatpak Package
NS Package Number W14B
SAMPLE TEXT 14-Pin Ceramic Package (WG)
NS Package Number WG14A
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26
LM124A/LM124QML Low Power Quad Operational Amplifiers
Notes
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and whose failure to perform when
properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
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National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship
Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned
Substances’’ as defined in CSP-9-111S2.
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