LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption, slew rate, input noise, and the gain-bandwidth product. The device is a truly general purpose operational amplifier. The LM4250C is identical to the LM4250 except that the LM4250C has its performance guaranteed over a 0˚C to +70˚C temperature range instead of the −55˚C to +125˚C temperature range of the LM4250. n n n n n n n n ± 1V to ± 18V power supply operation 3 nA input offset current Standby power consumption as low as 500 nW No frequency compensation required Programmable electrical characteristics Offset voltage nulling capability Can be powered by two flashlight batteries Short circuit protection Connection Diagrams Metal Can Package Dual-In-Line Package DS009300-5 Top View DS009300-2 Top View Ordering Information Temperature Range Package Military Commercial −55˚C ≤ TA ≤ +125˚C 0˚C ≤ TA ≤ +70˚C LM4250CN NSC Package Number 8-Pin N08E Molded DIP LM4250CM 8-Pin M08A Surface Mount LM4250J 8-Pin LM4250J-MIL Ceramic DIP LM4250H LM4250CH LM4250H-MIL © 1999 National Semiconductor Corporation 8-Pin J08E H08C Metal Can DS009300 www.national.com LM4250 Programmable Operational Amplifier May 1998 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 3) LM4250 LM4250C ± 18V ± 18V Operating Temp. Range −55˚C ≤ TA ≤ +125˚C 0˚C ≤ TA ≤ +70˚C Differential Input Voltage ± 30V ± 15V ± 30V ± 15V Supply Voltage Input Voltage (Note 2) ISET Current Output Short Circuit Duration 150 nA 150 nA Continuous Continuous 150˚C 100˚C 150˚C 100˚C TJMAX H-Package N-Package J-Package 100˚C M-Package Power Dissipation at TA = 25˚C H-Package (Still Air) (400 LF/Min Air Flow) 100˚C 500 mW 300 mW 1200 mW 1200 mW 1000 mW 600 mW N-Package J-Package 500 mW M-Package 350 mW Thermal Resistance (Typical) θJA H-Package (Still Air) (400 LF/Min Air Flow) 165˚C/W 165˚C/W 65˚C/W 65˚C/W N-Package J-Package 130˚C/W 108˚C/W 108˚C/W M-Package 190˚C/W (Typical) θJC H-Package Storage Temperature Range 21˚C/W 21˚C/W −65˚C to +150˚C −65˚C to +150˚C Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Soldering Information Dual-In-Line Package Soldering (10 seconds) 260˚C Small Outline Package Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD tolerance (Note 4) 800V www.national.com Note 2: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage. Note 3: Refer to RETS4250X for military specifications. Note 4: Human body model, 1.5 kΩ in series with 100 pF. 2 Resistor Biasing Set Current Setting Resistor to V− ISET VS 0.1 µA 0.5 µA 1.0 µA 5 µA 10 µA ± 1.5V ± 3.0V ± 6.0V ± 9.0V ± 12.0V ± 15.0V 25.6 MΩ 5.04 MΩ 2.5 MΩ 492 kΩ 244 kΩ 55.6 MΩ 11.0 MΩ 5.5 MΩ 1.09 MΩ 544 kΩ 116 MΩ 23.0 MΩ 11.5 MΩ 2.29 MΩ 1.14 MΩ 176 MΩ 35.0 MΩ 17.5 MΩ 3.49 MΩ 1.74 MΩ 236 MΩ 47.0 MΩ 23.5 MΩ 4.69 MΩ 2.34 MΩ 296 MΩ 59.0 MΩ 29.5 MΩ 5.89 MΩ 2.94 MΩ Electrical Characteristics LM4250 (−55˚C ≤ TA ≤ +125˚C unless otherwise specified.) TA = TJ VS = ± 1.5V Parameter ISET = 1 µA Conditions Min RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS RL = 100 kΩ, TA = 25˚C VO = ± 0.6V, RL = 10 kΩ ISET = 10 µA Max Min Max 3 mV 5 mV 3 nA 10 nA 7.5 nA 50 nA 40k 50k TA = 25˚C TA = 25˚C 7.5 µA 80 µA 23 µW 240 µW RS ≤ 100 kΩ TA = +125˚C TA = −55˚C 4 mV 6 mV 5 nA 10 nA Ibias 3 nA 10 nA 7.5 nA 50 nA ± 0.6V Input Voltage Range Large Signal Voltage Gain VO = ± 0.5V, RL = 100 kΩ RL = 10 kΩ Output Voltage Swing RL = 100 kΩ RL = 10 kΩ ± 0.6V Common Mode Rejection Ratio RS ≤ 10 kΩ 70 dB Supply Voltage Rejection Ratio RS ≤ 10 kΩ 76 dB ± 0.6V 30k 30k ± 0.6V Supply Current 70 dB 76 dB 8 µA 90 µA VS = ± 15V Parameter ISET = 1 µA Conditions Min VOS IOS Ibias Large Signal Voltage Gain Supply Current Power Consumption VOS IOS RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 10V, RL = 10 kΩ Max 3 mV 5 mV 3 nA 10 nA 7.5 nA 50 nA 100k RS ≤ 100 kΩ TA = +125˚C TA = −55˚C Ibias ± 13.5V 3 ISET = 10 µA Min 100k TA = 25˚C TA = 25˚C Input Voltage Range Max 10 µA 90 µA 300 µW 2.7 mW 4 mV 6 mV 25 nA 25 nA 3 nA 10 nA 7.5 nA 50 nA ± 13.5V www.national.com Electrical Characteristics (Continued) VS = ± 15V Parameter ISET = 1 µA Conditions Min Large Signal Voltage Gain VO = ± 10V, RL = 100 kΩ RL = 10 kΩ ISET = 10 µA Max Min Max 50k 50k Output Voltage Swing RL = 100 kΩ RL = 10 kΩ ± 12V Common Mode Rejection Ratio RS ≤ 10 kΩ 70 dB Supply Voltage Rejection Ratio RS ≤ 10 kΩ 76 dB ± 12V Supply Current Power Consumption 70 dB 76 dB 11 µA 100 µA 330 µW 3 mW Electrical Characteristics LM4250C (0˚C ≤ TA ≤ +70˚C unless otherwise specified.) TA = TJ VS = ± 1.5V Parameter ISET = 1 µA Conditions Min RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C VOS IOS Ibias ISET = 10 µA Max Min Max 5 mV 6 mV 6 nA 20 nA 10 nA 75 nA Large Signal Voltage Gain RL = 100 kΩ, TA = 25˚C VO = ± 0.6V, RL = 10 kΩ Supply Current 8 µA 90 µA Power Consumption TA = 25˚C TA = 25˚C 24 µW 270 µW VOS RS ≤ 10 kΩ 6.5 mV 7.5 mV 25k 25k IOS 8 nA 25 nA Ibias 10 nA 80 nA ± 0.6V Input Voltage Range Large Signal Voltage Gain VO = ± 0.5V, RL = 100 kΩ RL = 10 kΩ ± 0.6V 25k 25k Output Voltage Swing RL = 100 kΩ RL = 10 kΩ ± 0.6V Common Mode Rejection Ratio RS ≤ 10 kΩ 70 dB Supply Voltage Rejection Ratio RS ≤ 10 kΩ 74 dB ± 0.6V Supply Current Power Consumption 70 dB 74 dB 8 µA 90 µA 24 µW 270 µW VS = ± 15V Parameter ISET = 1 µA Conditions Min VOS IOS Ibias Large Signal Voltage Gain RS ≤ 100 kΩ, TA = 25˚C TA = 25˚C TA = 25˚C RL = 100 kΩ, TA = 25˚C VO = ± 10V, RL = 10 kΩ Max ISET = 10 µA Min Max 5 mV 6 mV 6 nA 20 nA 10 nA 75 nA 60k 60k Power Consumption TA = 25˚C TA = 25˚C 330 µW 3 mW VOS RS ≤ 100 kΩ 6.5 mV 7.5 mV IOS 8 nA 25 nA Ibias 10 nA 80 nA Supply Current www.national.com 11 µA 4 100 µA Electrical Characteristics (Continued) VS = ± 15V Parameter ISET = 1 µA Conditions Min Max ± 13.5V Input Voltage Range VO = ± 10V, RL = 100 kΩ RL = 10 kΩ Large Signal Voltage Gain ISET = 10 µA Min Max ± 13.5V 50k 50k Output Voltage Swing RL = 100 kΩ RL = 10 kΩ ± 12V Common Mode Rejection Ratio RS ≤ 10 kΩ 70 dB Supply Voltage Rejection Ratio RS ≤ 10 kΩ 74 dB ± 12V Supply Current Power Consumption 70 dB 74 dB 11 µA 100 µA 330 µW 3 mW Typical Performance Characteristics Input Bias Current vs ISET Input Bias Current vs Temperature Input Offset Current vs Temperature DS009300-15 DS009300-16 Unnulled Input Offset Voltage Change vs ISET Unnulled Input Offset Voltage Change vs Temperature DS009300-18 DS009300-17 Peak to Peak Output Voltage Swing vs Load Resistance DS009300-20 DS009300-19 5 www.national.com Typical Performance Characteristics Peak to Peak Output Voltage Swing vs Supply Voltage (Continued) Quiescent Current (Iq) vs Temperature Quiescent Current (Iq) vs ISET DS009300-23 DS009300-21 Slew Rate vs ISET DS009300-22 Gain Bandwidth Product vs ISET Open Loop Voltage Gain vs ISET DS009300-24 DS009300-25 Phase Margin vs ISET Input Noise Current (In) and Voltage (En) vs Frequency DS009300-27 RSET vs ISET DS009300-29 DS009300-28 www.national.com DS009300-26 6 Typical Applications X5 Difference Amplifier 500 Nano-Watt X10 Amplifier DS009300-4 DS009300-3 Quiescent PD = 0.6 mW Quiescent PD = 500 nW Floating Input Meter Amplifier 100 nA full Scale DS009300-8 Quiescent PD = 1.8 µW *Meter movement (0–100 µA, 2 kΩ) marked for 0–100 nA full scale. 7 www.national.com Typical Applications (Continued) X100 Instrumentation Amplifier 10 µW DS009300-9 Note 5: Quiescent PD = 10 µW. Note 6: R2, R3, R4, R5, R6 and R7 are 1% resistors. Note 7: R11 and C1 are for DC and AC common mode rejection adjustments. RSET Connected to V− RSET Connected to Ground DS009300-30 DS009300-11 DS009300-10 Transistor Current Sourcing Biasing FET Current Sourcing Biasing DS009300-13 DS009300-12 *R1 limits ISET maximum www.national.com 8 Offset Null Circuit DS009300-14 Schematic Diagram DS009300-1 9 www.national.com Physical Dimensions inches (millimeters) unless otherwise noted Metal Can Package (H) Order Number LM4250H, LM4250CH or LM4250H-MIL NS Package Number H08C Ceramic Dual-In-Line Package (J) Order Number LM4250J, or LM4250J-MIL NS Package Number J08A www.national.com 10 Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Small Outline Package (M) Order Number LM4250M NS Package Number M08A Molded Dual-In-Line Package (N) Order Number LM4250CN NS Package Number N08E 11 www.national.com LM4250 Programmable Operational Amplifier Notes LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: [email protected] www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: [email protected] Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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