SIDELED® LS A670, LO A670, LY A670 LG A670, LP A670 Besondere Merkmale Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Reflow-Löttechniken geeignet gegurtet (12-mm-Filmgurt) Störimpulsfest nach DIN 40839 Features ● ● ● ● ● ● color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 VPL06880 ● ● ● ● ● ● 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Typ Emissionsfarbe Farbe der Lichtaustrittsfläche Color of the Light Emitting Area Lichtstärke Lichtstrom Bestellnummer Type Color of Emission Luminous Intensity IF = 10 mA IV (mcd) Luminous Flux IF = 10 mA ΦV (mlm) Ordering Code LS A670-HL LS A670-J LS A670-K LS A670-L LS A670-JM super-red colorless clear 2.5 4.0 6.3 10.0 4.0 ... ... ... ... ... 20.0 8.0 12.5 20.0 32.0 18 (typ.) 30 (typ.) 45 (typ.) - Q62703-Q3908 Q62703-Q2833 Q62703-Q2834 Q62703-Q3840 Q62703-Q2835 LO A670-HK LO A670-J LO A670-K LO A670-L LO A670-JM orange colorless clear 2.5 4.0 6.3 10.0 4.0 ... ... ... ... ... 12.5 8.0 12.5 20.0 32.0 18 (typ.) 30 (typ.) 45 (typ.) - Q62703-Q2547 Q62703-Q2837 Q62703-Q3204 Q62703-Q2836 Q62703-Q2838 LY A670-HK LY A670-J LY A670-K LY A670-L LY A670-JM yellow colorless clear 2.5 4.0 6.3 10.0 4.0 ... ... ... ... ... 12.5 8.0 12.5 20.0 32.0 18 (typ.) 30 (typ.) 45 (typ.) - Q62703-Q2552 Q62703-Q2839 Q62703-Q2840 Q62703-Q3920 Q62703-Q2841 LG A670-HK LG A670-J LG A670-K LG A670-L LG A670-JM green colorless clear 2.5 4.0 6.3 10.0 4.0 ... ... ... ... ... 12.5 8.0 12.5 20.0 32.0 18 (typ.) 30 (typ.) 45 (typ.) - Q62703-Q2543 Q62703-Q2842 Q62703-Q2843 Q62703-Q3192 Q62703-Q2844 LP A670-FJ LP A670-G LP A670-H LP A670-J LP A670-GK pure green colorless clear 1.0 1.6 2.5 4.0 1.6 ... 8.0 ... 3.2 ... 5.0 ... 8.0 ... 12.5 8 (typ.) 12 (typ.) 18 (typ.) - Q62703-Q2549 Q62703-Q2845 Q62703-Q2846 Q62703-Q3214 Q62703-Q2847 Streuung der Lichtstärke in einer Verpackungseinheit IV min/ IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0. Semiconductor Group 2 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top – 55 ... + 100 ˚C Lagertemperatur Storage temperature range Tstg – 55 ... + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 0.5 A Sperrspannung Reverse voltage VR 5 V Verlustleistung Power dissipation Ptot 100 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße je ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2each) Rth JA 430 K/W *) PC-board: FR4 Semiconductor Group 3 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LO LY LG LP Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA (typ.) (typ.) λpeak 635 610 586 565 557 nm Dominantwellenlänge Dominant wavelength IF = 10 mA (typ.) (typ.) λdom 628 605 590 570 560 nm Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA (typ.) (typ.) ∆λ 45 40 45 25 22 nm 2ϕ 120 120 120 120 120 Grad deg. 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaßspannung Forward voltage IF = 10 mA (typ.) (max.) VF VF 2.0 2.6 Sperrstrom Reverse current VR = 5 V (typ.) (max.) IR IR 0.01 0.01 0.01 0.01 0.01 µA 10 10 10 10 10 µA (typ.) C0 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Kapazität Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 µs, RL = 50 Ω Semiconductor Group 4 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA Relative spectral emission V(λ) = spektrale Augenempfindlichkeit Standard eye response curve OHL01698 100 % Ι rel 80 Vλ hyper-red red super-red orange blue 40 yellow pure-green green 60 20 0 400 450 500 550 600 650 nm 700 λ Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 Semiconductor Group 0.6 0.4 0˚ 20˚ 5 40˚ 60˚ 80˚ 100˚ 120˚ 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C Relative Lichtstärke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 ˚C OHL02145 10 2 OHL02146 10 1 Ι F mA ΙV Ι V (10 mA) 10 0 5 10 1 5 10 -1 5 pure-green 10 0 green red yellow super-red orange pure-green 10 -2 5 5 super-red orange/yellow green 10 -1 1.0 1.4 1.8 2.2 2.6 10 -3 10 3.0 V 3.4 -1 5 10 0 5 10 Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C tP D= mA tP ΙF ΙF T OHL01661 60 mA 50 T D = 0.005 0.01 0.02 0.05 0.1 40 10 2 0.2 5 2 Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) OHL01686 ΙF mA 10 ΙF VF 10 3 1 30 0.5 20 DC 10 10 1 -5 10 10 -4 10 -3 Semiconductor Group 10 -2 10 -1 0 10 0 s 10 1 tp 6 0 20 40 60 80 ˚C 100 TA 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Wellenlänge der Strahlung λpeak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlänge λdom = f (TA) Dominant wavelength IF = 10 mA OHL02104 690 OHL02105 690 λ peak λ dom nm nm 650 650 super-red 630 super-red 630 orange 610 610 590 yellow 590 570 green 570 orange yellow green pure-green pure-green 550 0 20 40 60 550 80 ˚C 100 0 20 40 60 80 ˚C 100 TA TA Durchlaßspannung VF = f (TA) Forward voltage IF = 10 mA OHL02106 2.4 VF Relative Lichtstärke IV / IV(25 ˚C ) = f (TA) Relative luminous intensity IF = 10 mA OHL02150 2.0 ΙV V Ι V (25 ˚C) 2.2 2.0 1.6 1.2 yellow green green super-red orange yellow 1.8 0.8 orange super-red pure-green pure-green 1.6 1.4 0.4 0 20 40 60 0.0 80 ˚C 100 TA Semiconductor Group 0 20 40 60 80 ˚C 100 TA 7 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 0.7 2.8 2.4 4.2 3.8 (2.4) (1.4) 3.8 3.4 (R1) GPL06880 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing 4.2 3.8 Kathodenkennung: Cathode mark: Semiconductor Group (2.85) 1.1 0.9 abgeschrägte Ecke bevelled edge 8 1998-11-12