LS103A, LS103B, LS103C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009 Applications Mechanical Data • • • • Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters Parts Table Part Type differentiation Ordering code Remarks LS103A VR = 40 V LS103A-GS18 or LS103A-GS08 Tape and Reel LS103B VR = 30 V LS103B-GS18 or LS103B-GS08 Tape and Reel LS103C VR = 20 V LS103C-GS18 or LS103C-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak forward surge current Part Symbol Value Unit LS103A VR 40 V LS103B VR 30 V LS103C VR 20 V IFSM 15 A Ptot 400 mW tp = 300 µs, square pulse Power dissipation Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Document Number 85631 Rev. 1.4, 05-Aug-10 Test condition Symbol Value Unit On PC board 50 mm x 50 mm x 1.6 mm RthJA 250 K/W Tj 125 °C Tstg - 65 to + 150 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 LS103A, LS103B, LS103C Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition IR = 10 µA Reverse Breakdown Voltage VR = 30 V Leakage current Part Symbol Min LS103A V(BR) 40 V LS103B V(BR) 30 V LS103C V(BR) 20 LS103A IR 5 µA Diode capacitance Reverse recovery time Max Unit µA V VR = 20 V LS103B IR 5 VR = 10 V LS103C IR 5 µA VF 370 mV 600 mV IF = 20 mA Forward voltage drop Typ. IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 to 200 mA, recover to 0.1 IR trr 10 ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 10 000 IR - Reverse Current (µA) IF - Forward Current (mA) 100 10 1 0.1 0.01 1000 100 10 0.001 1 0 0 100 200 300 400 500 600 700 800 900 1000 20 16767 VF - Forward Voltage (mV) 16765 Figure 1. Forward Current vs. Forward Voltage 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Figure 3. Reverse Current vs. Junction Temperature 5 30 CD - Diode Capacitance (pF) IF - Forward Current (A) f = 1 MHz 4 3 2 1 25 20 15 10 0 0 0.0 16766 0.5 1.0 1.5 www.vishay.com 0 2.0 VF - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage 2 5 16768 5 10 15 20 25 30 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85631 [email protected], [email protected], [email protected] Rev. 1.4, 05-Aug-10 LS103A, LS103B, LS103C Vishay Semiconductors Itot - Typ. Non Repetitve Forward Surge Current (A) 25 20 15 10 5 0 0.1 16769 1.0 10.0 tP - Pulse width (ms) Figure 5. Typ. Non Repetitive Forward Surge Current vs. Pulse width Package Dimensions in millimeters (inches): QuadroMELF SOD-80 12071 Document Number 85631 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 QuadroMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number: 84025 Rev. 1.2, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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