LS3250B MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250B is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS3250B Features: Tight matching Low Output Capacitance FEATURES TIGHT MATCHING THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) ≤ 5mV ≤ 5µV / °C Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Collector Current Maximum Voltages Collector to Collector Voltage MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/ ∆T Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ‐65°C to +150°C ‐55°C to +150°C TBD 50mA 80V MIN ‐‐ ‐‐ TYP ‐‐ ‐ MAX 5 5 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 10 0.5 nA nA/°C ‐‐ ‐‐ 10 % CONDITIONS IC = 10mA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐40°C to +85°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐40°C to +85°C IC = 10µA, VCE = 5V Click To Buy ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 40 BVCEO Collector to Emitter Voltage 40 BVEBO2 Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 80 100 DC Current Gain hFE 80 80 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product ‐‐ NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.25 0.2 0.2 2 1 600 3 UNITS V V V V V nA nA pF nA MHz dB CONDITIONS IC = 10mA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 0 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 100mA, IB = 10mA IC = 0A, VCB = 3V IE = 0A, VCB = 20V IE = 0A, VCB = 10V VCC = ±80V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. P-DIP (Top View) Available Packages: LS3250B in P-DIP LS3250B available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.