Micross LS3250C Linear systems log conformance monolithic dual npn Datasheet

LS3250C
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS3250C is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and is ideal for use
in tracking applications.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3250C Features:
ƒ
ƒ
Tight matching
Low Output Capacitance
FEATURES
TIGHT MATCHING
THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
≤ 10mV
≤ 15µV / °C
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltage
Collector to Collector Voltage
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|VBE1 – VBE2 |
Base Emitter Voltage Differential
∆|(VBE1 – VBE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|IB1 – IB2 |
Base Current Differential
|∆ (IB1 – IB2)|/ ∆T
Base Current Differential
Change with Temperature
hFE1 /hFE2
DC Current Gain Differential
‐65°C to +150°C
‐55°C to +150°C
TBD
50mA
80V
MIN
‐‐
‐‐
TYP
‐‐
‐
MAX
10
15
UNITS
mV
µV/°C
‐‐
‐‐
‐‐
‐‐
10
1.0
nA
nA/°C
‐‐
‐‐
15
%
CONDITIONS
IC = 10mA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐40°C to +85°C
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐40°C to +85°C
IC = 10µA, VCE = 5V
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ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVCBO
Collector to Base Voltage
20
BVCEO
Collector to Emitter Voltage
20
BVEBO2
Emitter‐Base Breakdown Voltage
6.2
BVCCO
Collector to Collector Voltage
80
50
DC Current Gain
hFE
40
40
VCE(SAT)
Collector Saturation Voltage
‐‐
IEBO
Emitter Cutoff Current
‐‐
ICBO
Collector Cutoff Current
‐‐
COBO
Output Capacitance
‐‐
IC1C2
Collector to Collector Leakage Current
‐‐
fT
Current Gain Bandwidth Product
‐‐
NF
Narrow Band Noise Figure
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
1.2
0.2
0.2
2
1
600
3
UNITS
V
V
V
V
V
nA
nA
pF
nA
MHz
dB
CONDITIONS
IC = 10mA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 0
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 100mA, IB = 10mA
IC = 0A, VCB = 3V
IE = 0A, VCB = 20V
IE = 0A, VCB = 10V
VCC = ±80V
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS3250C in P-DIP
LS3250C available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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