LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS(off)=2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 S1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -65° to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO Drain to Source Voltage -IG(f) Gate Forward Current G2 C 4 G1 3 D1 D1 2 D2 40V G1 10mA S2 5 S2 6 D2 S1 1 7 G2 TO-78 BOTTOM VIEW 22 X 20 MILS Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS 10 25 40 10 25 40 µV/°C VDG= 10V ID= 30µA |∆VGS1-2 /∆T| max. Drift vs. Temperature TA=-55°C to +125°C |VGS1-2| max. Offset Voltage 10 15 25 10 15 25 mV VDG=10V ID= 30µA VGS(off) GATE VOLTAGE Pinchoff Voltage 2.0 2.0 2.0 3.0 3.0 3.0 V VDS=10V ID= 1nA VGS Operating Range 1.8 1.8 1.8 2.9 2.9 2.9 V VDG=10V ID= 30µA IGmax. Operating .25 .25 .25 .500 .500 .500 pA VDG=10V ID= 30µA -IGmax. High Temperature 250 250 250 500 500 500 pA TA= +125°C -IGSSmax. At Full Conduction 1.0 1.0 1.0 3.0 3.0 3.0 pA VDS= 0V -IGSSmax. High Temperature 1.0 1.0 1.0 3.0 3.0 3.0 nA TA= +125°C SYMBOL BVGSS CHARACTERISTICS Breakdown Voltage BVGGO VGS= 20V MIN. 40 TYP. 60 MAX. -- UNITS V Gate-to-Gate Breakdown 40 -- -- V IG= 1µA ID= 0 IS= 0 Yfss TRANSCONDUCTANCE Full Conduction 300 -- 1500 µmho VDS= 10V VGS= 0 f= 1kHz Yfs Typical Operation 120 200 350 µmho VDG= 10V ID= 30µA f= 1kHz DRAIN CURRENT 60 -- 1000 µA LS421-3 VDS= 10V VGS= 0 Full Conduction 60 -- 1800 µA LS424-6 IDSS Linear Integrated Systems CONDITIONS VDS= 0 IG= 1nA 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL YOSS CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction YOS Operating MIN. TYP. MAX. UNITS -- -- 10 µmho -- 0.1 3.0 µmho CONDITIONS VDS= 10V VGS= 0 VDG= 10V ID= 30µA COMMON MODE REJECTION CMR -20 log |∆VGS1-2/∆VDS| -- 90 -- dB ∆VDS= 10 to 20V ID= 30µA CMR -20 log |∆VGS1-2/∆VDS| -- 90 -- dB ∆VDS= 5 to 10V ID= 30µA VDG= 10V f= 10Hz VDG= 10V RG= 10MΩ NOISE NF Figure -- -- 1.0 dB en Voltage -- 20 70 nV/√Hz CISS CAPACITANCE Input -- -- 3.0 CRSS Reverse Transfer -- -- 1.5 10 TO-71 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B VDG= 10V ID= 30µA f= 1kHz pF VDS= 10V VGS= 0 f= 1MHz pF VDS= 10V VGS= 0 f= 1MHz 0.320 (8.13) 0.290 (7.37) Six Lead 0.195 DIA. 0.175 ID= 30µA f= 10Hz P-DIP TO-78 0.230 DIA. 0.209 ID= 30µA SEATING PLANE 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 S1 D1 D1 G1 SS N/C G1 1 2 3 4 8 7 6 5 G2 N/C SS G2 D2 D2 S2 S2 0.228 (5.79) 0.244 (6.20) S1 D1 G1 N/C N/C G2 D2 S2 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261