Linear LS425 Low leakage low drift monolithic dual n-channel jfet Datasheet

LS421, LS422, LS423,
LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
IG=0.25pA MAX
HIGH GAIN
gfs=120µmho MIN
LOW POWER OPERATION
VGS(off)=2V MAX
ABSOLUTE MAXIMUM RATINGS NOTE 1
S1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65° to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-VGSS
-VDSO
Drain to Source Voltage
-IG(f)
Gate Forward Current
G2
C
4
G1
3
D1
D1 2
D2
40V
G1
10mA
S2
5
S2
6 D2
S1
1
7
G2
TO-78
BOTTOM VIEW
22 X 20 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
10
25
40
10
25
40
µV/°C
VDG= 10V ID= 30µA
|∆VGS1-2 /∆T| max. Drift vs. Temperature
TA=-55°C to +125°C
|VGS1-2| max.
Offset Voltage
10
15
25
10
15
25
mV
VDG=10V
ID= 30µA
VGS(off)
GATE VOLTAGE
Pinchoff Voltage
2.0
2.0
2.0
3.0
3.0
3.0
V
VDS=10V
ID= 1nA
VGS
Operating Range
1.8
1.8
1.8
2.9
2.9
2.9
V
VDG=10V
ID= 30µA
IGmax.
Operating
.25
.25
.25
.500
.500
.500
pA
VDG=10V
ID= 30µA
-IGmax.
High Temperature
250
250
250
500
500
500
pA
TA= +125°C
-IGSSmax.
At Full Conduction
1.0
1.0
1.0
3.0
3.0
3.0
pA
VDS= 0V
-IGSSmax.
High Temperature
1.0
1.0
1.0
3.0
3.0
3.0
nA
TA= +125°C
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
BVGGO
VGS= 20V
MIN.
40
TYP.
60
MAX.
--
UNITS
V
Gate-to-Gate Breakdown
40
--
--
V
IG= 1µA
ID= 0
IS= 0
Yfss
TRANSCONDUCTANCE
Full Conduction
300
--
1500
µmho
VDS= 10V
VGS= 0
f= 1kHz
Yfs
Typical Operation
120
200
350
µmho
VDG= 10V
ID= 30µA
f= 1kHz
DRAIN CURRENT
60
--
1000
µA
LS421-3
VDS= 10V
VGS= 0
Full Conduction
60
--
1800
µA
LS424-6
IDSS
Linear Integrated Systems
CONDITIONS
VDS= 0
IG= 1nA
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
YOSS
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
YOS
Operating
MIN.
TYP.
MAX. UNITS
--
--
10
µmho
--
0.1
3.0
µmho
CONDITIONS
VDS= 10V
VGS= 0
VDG= 10V
ID= 30µA
COMMON MODE REJECTION
CMR
-20 log |∆VGS1-2/∆VDS|
--
90
--
dB
∆VDS= 10 to 20V
ID= 30µA
CMR
-20 log |∆VGS1-2/∆VDS|
--
90
--
dB
∆VDS= 5 to 10V
ID= 30µA
VDG= 10V
f= 10Hz
VDG= 10V
RG= 10MΩ
NOISE
NF
Figure
--
--
1.0
dB
en
Voltage
--
20
70
nV/√Hz
CISS
CAPACITANCE
Input
--
--
3.0
CRSS
Reverse Transfer
--
--
1.5
10
TO-71
0.030
MAX.
0.150
0.115
6 LEADS
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
VDG= 10V
ID= 30µA f= 1kHz
pF
VDS= 10V
VGS= 0
f= 1MHz
pF
VDS= 10V
VGS= 0
f= 1MHz
0.320 (8.13)
0.290 (7.37)
Six Lead
0.195
DIA.
0.175
ID= 30µA f= 10Hz
P-DIP
TO-78
0.230
DIA.
0.209
ID= 30µA
SEATING
PLANE
0.405
(10.29)
MAX.
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.200
0.100
0.050
5
6
45°
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
1
8
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
S1
D1
D1
G1
SS
N/C
G1
1
2
3
4
8
7
6
5
G2
N/C
SS
G2
D2
D2
S2
S2
0.228 (5.79)
0.244 (6.20)
S1
D1
G1
N/C
N/C
G2
D2
S2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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