Vishay LS4448-GS08 Small signal fast switching diode Datasheet

LS4148/LS4448
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the devices
e2
1N4148 and 1N4448 respectively
• Quadro Melf package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612009
Applications
• Extremely fast switches
Mechanical Data
Case: QuadroMELF Glass case (SOD80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
LS4148
VF = max. 1000 mV at IF = 50 mA
LS4148-GS18 or LS4148-GS08
-
Tape and Reel
LS4448
VF = max. 1000 mV at IF = 100 mA
LS4448-GS18 or LS4448-GS08
-
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
Average forward current
VR = 0
Power dissipation
Symbol
Value
Unit
VRRM
100
V
VR
75
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
Ptot
500
mW
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
Document Number 85561
Rev. 1.8, 04-May-07
Test condition
on PC board
50 mm x 50 mm x 1.6mm
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LS4148/LS4448
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
LS4448
VF
620
Max
Unit
720
IF = 50 mA
LS4148
VF
mV
IF = 100 mA
LS4448
VF
860
1000
mV
930
1000
mV
IR
25
nA
VR = 20 V, Tj = 150 °C
IR
50
µA
VR = 75 V
IR
5
µA
IF = 5 mA
Forward voltage
VR = 20 V
Reverse current
V(BR)
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
Rectification efficiency
VHF = 2 V, f = 100 MHz
ηr
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
Typ.
100
V
4
pF
trr
8
ns
trr
4
ns
45
%
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
1000
IR- Reverse Current (nA)
IF - Forward Current (mA)
LS4148
100
Scattering Limit
10
1
Tj = 25 °C
0.1
0
0.4
0.8
1.2
1.6
1
1
100
Figure 3. Reverse Current vs. Reverse Voltage
3.0
1000
CD - Diode Capacitance (pF)
LS4448
IF - Forward Current (mA)
10
VR- Reverse Voltage (V)
94 9098
Figure 1. Forward Current vs. Forward Voltage
100
Scattering Limit
10
1
Tj = 25 °C
0
16642
0.4
0.8
1.2
1.6
2.0
1.5
1.0
0.5
0.1
2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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f = 1 MHz
Tj = 25 °C
2.5
0
0.1
2
Scattering Limit
10
2.0
VF - Forward Voltage (V)
16640
Tj = 25 °C
100
94 9099
1
100
10
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85561
Rev. 1.8, 04-May-07
LS4148/LS4448
Vishay Semiconductors
Package Dimensions in millimeters (inches): Quadro MELF SOD80
96 12071
Document Number 85561
Rev. 1.8, 04-May-07
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LS4148/LS4448
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85561
Rev. 1.8, 04-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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