LS5018B LS5060B/LS5120B TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGES RANGE: 18V, 60V and 120V. HOLDING CURRENT = 200mA min. HIGH SURGE CURRENT CAPABILITY IPP = 100A 10/1000 µs DESCRIPTION DIL8 The LS50xxB series has been designed to protect telecommunication equipment against lightning and transients induced by AC power lines. Its high surge current capability makes the LS50xxB a reliable protection device for very exposed equipment, or when series resistors are very low. SCHEMATIC DIAGRAM COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 µs µs µs µs µs µs 1.5 kV 38 A 2 kV 50 A 1.5 kV 38 A 1 8 2 7 3 6 4 5 ABSOLUTE MAXIMUM RATINGS (Tamb =25°C) Symbol Parameter Value Unit IPP Peak pulse current 10/1000 µs 8/20 µs 100 250 A ITSM Non repetitive surge peak on-state current tp = 20 ms 50 A dI/dt Critical rate of rise of on-state current Non repetitive 100 A/µs dV/dt Critical rate of rise of off-state voltage VRM 5 kV/µs - 40 to + 150 150 °C °C 230 °C Tstg Tj Storage and operating junction temperature range TL Maximum lead temperature for soldering during 10s September 1998 Ed : 3A 1/5 LS5018B/LS5060B/LS5120B THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient on printed circuit with recommended pad layout Value Unit 80 °C/W ELECTRICAL CHARACTERISTICS (Tamb =25°C) Symbol Parameter IRM Leakage current at stand-offvoltage VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance IRM @ VRM Type max. VBR @ IR min. VBO @ IBO max. typ. note 1 IH C min. max. note 2 note 3 µA V V mA V mA mA pF LS5018B 5 16 17 1 22 1300 200 150 LS5060B 10 50 60 1 85 1000 200 150 LS5120B 20 100 120 1 180 1250 250 150 Note 1 : Measured at 50Hz (1 cycle) Note 2 : See test circuit Note 3 : VR = 5 V, F = 1MHz. 2/5 LS5018B/LS5060B/LS5120B TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout D.U.T IBO measure V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R VBAT = - 48 V - VP D.U.T. Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 3/5 LS5018B/LS5060B/LS5120B Figure 1 : Non repetitive surge peak current versus overload duration ITSM (A) Figure 2 : Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25°C] 70 2.0 60 1.8 F=50Hz Tj initial=25°C 50 1.6 1.4 1.2 40 1.0 30 0.8 0.6 20 0.4 10 0.2 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Figure 3 : Relative variation of breakdown voltage versus ambient temperature. 0.0 -40 Tamb (°C) -20 0 20 40 60 80 100 120 Figure 4 : Junction capacitance versus reverse applied voltage. 1000 1.08 1.06 1.04 LS5018 LS5060 100 1.02 LS5120 1.00 0.98 10 1 0.96 0 10 20 30 40 50 60 70 10 ORDER CODE LS5 018 VOLTAGE 4/5 B 100 200 LS5018B/LS5060B/LS5120B Packaging : Products supplied in antistatic tubes. Weight : 0.59g MARKING : Logo, Date Code,part Number. PACKAGE MECHANICAL DATA DIL 8 Plastic REF. DIMENSIONS Millimetres Inches Min. Typ. Max. Min. Typ. Max. I a1 B1 B b b1 L F e Z e3 D E 8 5 1 4 a1 B 0.70 1.39 0.027 1.65 0.055 0.065 B1 0.91 1.04 0.036 0.041 b b1 0.38 0.5 0.020 0.50 0.015 0.020 9.80 0.385 D E 8.8 0.346 e e3 2.54 7.62 0.100 0.300 F I L Z 7.1 4.8 3.3 0.44 0.280 0.189 0.130 1.60 0.017 0.063 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5