LS5911 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5911 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5911 LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) The LS5911 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The LS5911 is a direct replacement for discontinued Siliconix and National 2N5911. Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS5911 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA ‐25V ‐25V MIN ‐‐ ‐‐ TYP ‐‐ ‐‐ MAX 10 20 UNITS mV µV/°C CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V 0.95 ‐‐ 1 % ‐‐ ‐‐ 20 nA 0.95 ‐‐ 1 % VDG = 10V, ID = 5mA TA = +125°C VDS = 10V, ID = 5mA, f = 1kHz ‐‐ 85 ‐‐ dB VDG = 5V to 10V, ID = 5mA Click To Buy |IG1 – IG2 | gfs1 / gfs2 CMRR Differential Gate Current Forward Transconductance Ratio2 Common Mode Rejection Ratio ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 VGS(F) Gate to Source Forward Voltage ‐‐ VGS Gate to Source Voltage ‐0.3 IDSS Gate to Source Saturation Current3 7 IGSS Gate Leakage Current3 ‐‐ IG Gate Operating Current ‐‐ gfs Forward Transconductance gos Output Conductance CISS CRSS NF en Input Capacitance Reverse Transfer Capacitance Noise Figure Equivalent Input Noise Voltage 4000 4000 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ TYP. ‐‐ ‐‐ 0.7 ‐‐ ‐‐ ‐1 ‐1 MAX. UNITS ‐5 ‐‐ ‐4 40 ‐50 ‐50 V ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 7 4 10000 10000 100 150 5 1.2 1 20 10 Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 3. Assumes smaller value in numerator pA CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1nA IG = 1mA, VDS = 0V VDG = 10V, IG = 5mA VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5mA µS VDG = 10V, ID= 5mA pF VDG = 10V, ID = 5mA, f = 1MHz dB nV/√Hz VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ VDG = 10V, ID = 5mA, f = 100Hz VDG = 10V, ID = 5mA, f = 10kHz mA 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% Available Packages: Please contact Micross for full package and die dimensions: LS5911 in SOIC LS5911 available as bare die Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.