LSJ111 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J111 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. FEATURES DIRECT REPLACEMENT FOR SILICONIX J111 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) (See Packaging Information). Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage Gate to Source Voltage LSJ111 Benefits: Short Sample & Hold Aperture Time Low insertion loss Low Noise LSJ111 Applications: Analog Switches Commutators Choppers LSJ111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐35 VGS(off) Gate to Source Cutoff Voltage ‐3 VGS(F) Gate to Source Forward Voltage ‐‐ IDSS Drain to Source Saturation Current (Note 2) 20 IGSS Gate Reverse Current ‐‐ IG Gate Operating Current ‐‐ ID(off) Drain Cutoff Current ‐‐ rDS(on) Drain to Source On Resistance ‐‐ ‐55°C to +150°C ‐55°C to +135°C 360mW 50mA VGDS = ‐35V VGSS = ‐35V TYP. ‐‐ ‐‐ 0.7 ‐‐ ‐0.005 ‐0.5 0.005 ‐‐ MAX ‐‐ ‐10 ‐‐ ‐‐ ‐1 ‐‐ 1 30 UNITS CONDITIONS IG = 1µA, VDS = 0V VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V VDS = 15V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 15V, ID = 10mA VDS = 5V, VGS = ‐10V IG = 1mA, VDS = 0V LSJ111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. gfs Forward Transconductance ‐‐ 6 gos Output Conductance ‐‐ 25 rDS(on) Drain to Source On Resistance ‐‐ ‐‐ Ciss Input Capacitance ‐‐ 7 Crss Reverse Transfer Capacitance ‐‐ 3 en Equivalent Noise Voltage ‐‐ 3 MAX ‐‐ ‐‐ 30 12 5 ‐‐ UNITS mS µS Ω pF CONDITIONS VDS = 20V, ID = 1mA , f = 1kHz nV/√Hz VDG = 10V, ID = 1mA , f = 1kHz V mA nA pA nA Ω Click To Buy LSJ111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS td(on) Turn On Time CONDITIONS 2 tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 VGS = 0V, ID = 0mA, f = 1kHz VDS = 0V, VGS = ‐10V, f = 1MHz VDD = 10V VGS(H) = 0V ns See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ111 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% LSJ111 SWITCHING CIRCUIT PARAMETERS VGS(L) RL ID(on) ‐12V 800Ω 12mA Micross Components Europe Available Packages: TO-92 (Bottom View) SWITCHING TEST CIRCUIT LSJ111 in TO-92 LSJ111 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.