Siemens LSR970-JO Chipled Datasheet

CHIPLED
LY R970, LO R970, LS R970
Besondere Merkmale
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Gehäusebauform: 0805
Industriestandard bzgl. Lötpadraster
geringe Bauteilhöhe
für IR-Lötung geeignet
für Hinterleuchtungen und als opt. Indikator einsetzbar
gegurtet (8-mm-Filmgurt)
VEO06987
Features
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0805 package
Industry standard footprint
low profile
suitable for IR reflow soldering process
for use as optical indicator and backlighting
available taped on reel (8 mm tape)
Typ
Emissionsfarbe
Type
Color of
Emission
LY R970-JO
LO R970-JO
LS R970-JO
yellow
orange
super-red
Semiconductor Group
Farbe der
Lichtaustrittsfläche
Color of the
Light Emitting
Area
colorless clear
Lichtstärke
Lichtstrom
Bestellnummer
Luminous
Intensity
IF = 20 mA
I V (mcd)
Luminous
Flux
IF = 20 mA
ΦV (mlm)
Ordering Code
≥ 4.0 (7 typ.)
≥ 4.0 (7 typ.)
≥ 4.0 (7 typ.)
60 (typ.)
60 (typ.)
60 (typ.)
Q62702-P5104
Q62702-P5100
Q62702-P5102
1
1998-09-01
LY R970, LO R970, LS R970
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
Top
– 30 ... + 85
°C
Lagertemperatur
Storage temperature range
Tstg
– 40 ... + 85
°C
Sperrschichttemperatur
Junction temperature
Tj
+ 95
°C
Durchlaßstrom
Forward current
IF
25
mA
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
IFM
0.1
A
Sperrspanung
Reverse voltage
VR
5
V
Verlustleistung, TA = 25 °C
Power dissipation, TA = 25 °C
Ptot
75
mW
Wärmewiderstand
Sperrschicht / Umgebung
Thermal resistance
Junction / air
Rth JA
610
K/W
Semiconductor Group
2
1998-09-01
LY R970, LO R970, LS R970
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LY
LO
LS
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 20 mA
(typ.)
(typ.)
λpeak
586
610
635
nm
Dominantwellenlänge
Dominant wavelength
IF = 20 mA
(typ.)
(typ.)
λdom
590
605
628
nm
Spektrale Bandbreite bei 50 % Irel max
Spectral bandwidth at 50 % Irel max
IF = 20 mA
(typ.)
(typ.)
∆λ
45
40
45
nm
2ϕ
160
160
160
Grad
deg.
Abstrahlwinkel bei 50 % Iv (Vollwinkel)
Viewing angle at 50 % Iv
Durchlaßspannung
Forward voltage
IF = 20 mA
(typ.)
(max.)
VF
VF
2.3
2.9
2.3
2.9
2.3
2.9
V
V
Sperrstrom
Reverse current
VR = 5 V
(typ.)
(max.)
IR
IR
0.01
10
0.01
10
0.01
10
µA
µA
TCλpeak
0.1
0.1
0.1
nm/K
Temperaturkoeffizient von λdom, IF = 20 mA (typ.) TCλdom
Temperature coefficient of λdom, IF = 20 mA (typ.)
0.08
0.08
0.08
nm/K
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCVF
Temperature coefficient of VF, IF = 20 mA (typ.)
– 1.9
– 1.9
– 1.9
mV/K
Temperaturkoeffizient von λpeak
(IF = 20 mA)
Temperature coefficient of λpeak
(IF = 20 mA)
Semiconductor Group
(typ.)
(typ.)
3
1998-09-01
LY R970, LO R970, LS R970
Relative spektrale Emission Irel = f (λ), TA = 25 °C, IF = 20 mA
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
OHL00411
100
%
Ι rel
80
Vλ
super-red
yellow
40
orange
60
20
0
400
450
500
550
600
650
nm
700
λ
Abstrahlcharakteristik Irel = f (ϕ)
Radiation characteristic
40˚
30˚
20˚
10˚
0˚
ϕ
50˚
OHL00408
1.0
0.8
0.6
60˚
0.4
70˚
0.2
80˚
0
90˚
100˚
1.0
0.8
Semiconductor Group
0.6
0.4
0˚
20˚
4
40˚
60˚
80˚
100˚
120˚
1998-09-01
LY R970, LO R970, LS R970
Durchlaßstrom IF = f (VF)
Forward current
TA = 25 °C
Relative Lichtstärke IV/IV(20 mA) = f (IF)
Relative luminous intensity TA = 25 °C
OHL00412
10 2
OHL00414
10 1
Ι F mA
ΙV
Ι V (20 mA)
10 0
10 1
5
5
10 -1
5
10 0
10 -2
5
yellow
super-red
orange
5
super-red
orange/yellow
10 -1
1.0
1.4
1.8
2.2
2.6
10 -3
10
3.0 V 3.4
-1
5 10
0
10
5
2
Relative Lichtstärke IV / IV(25 °C ) = f (TA)
Relative luminous intensity
IF = 20 mA
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
IF = f (TA)
IF
mA 10
ΙF
VF
OHL00418
30
mA
1
OHL00413
2.0
ΙV
Ι V (25 ˚C)
25
1.6
20
1.2
yellow
15
0.8
orange
super-red
10
0.4
5
0
0.0
0 10 20 30 40 50 60 70 80 ˚C 100
TA
Semiconductor Group
0
20
40
60
80 ˚C 100
TA
5
1998-09-01
LY R970, LO R970, LS R970
Maßzeichnung
Package Outlines
(Maße in mm, wenn nicht anders angegeben)
(Dimensions in mm, unless otherwise specified)
0.8 ±0.1
1.25 ±0.1
0.3 ±0.1
0.5 ±0.1
0.29 ±0.1
1.2 ±0.1
2 ±0.1
1.3 ±0.1
Kathode/
Cathode
mark
GEO06987
Semiconductor Group
6
1998-09-01
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